Dy3+掺杂Bi4Si3O12晶体生长及其热释光特性

doi:10.15541/jim20160221

摘要/Abstract

摘要：

采用坩埚下降法生长了Dy³⁺掺杂浓度分别为0.1mol%、0.2mol%、0.3mol%、2mol%、3mol%和4mol%的Bi₄Si₃O₁₂(BSO)晶体。发现高浓度(2mol%以上)掺杂能够显著改变BSO晶体的析晶行为, 晶体表面析出物完全消失, 顶部呈现光滑结晶面; 低浓度(低于0.3mol%)掺杂能够显著提高晶体的光输出, 最高可达纯BSO的145%。晶体热释光谱测试结果表明: 少量Dy³⁺掺杂虽然热释光峰略有增强, 但有利于晶体光产额的提高; 高浓度掺杂则容易引起晶格畸变, 甚至产生新的缺陷, 降低晶体的光产额。

关键词: 硅酸铋, 晶体生长, Dy³⁺掺杂, 热释光, 光产额

Abstract:

Dy³⁺ doped Bi₄Si₃O₁₂ (BSO) crystals were grown by the vertical Bridgman method with doping contents of 0.1mol%, 0.2mol%, 0.3mol%, 2mol%, 3mol% and 4 mol%. It was found that the crystallization behavior was modified by heavy doping and the surface precipitated phase disappeared gradually with the dopant content increase. The maximum light yield of the BSO crystals doped with 0.1mol% Dy³⁺was up to 145% of that of pure BSO. The thermo-luminescence (TL) spectra showed that the intensity of TL peaks increased slightly and Dy³⁺doping is helpful to light yield when doping content is less than 0.3mol%. However, it induced more defects when the dopant content was larger than 2mol%. High doping may lead to competitive luminescence between Dy³⁺ ions and Bi³⁺ ions, resulting in decrease of light yield.

Key words: Bi₄Si₃O₁₂, crystal growth, Dy³⁺ doping, thermoluminescence, light yield

中图分类号:

TQ174

汪美玲, 徐家跃, 张彦, 储耀卿, 杨波波, 申慧, 田甜. Dy³⁺掺杂Bi₄Si₃O₁₂晶体生长及其热释光特性[J]. 无机材料学报, 2016, 31(10): 1068-1072.

WANG Mei-Ling, XU Jia-Yue, ZHANG Yan, CHU Yao-Qing, YANG Bo-Bo, SHEN Hui, TIAN Tian. Growth and Thermo-luminescence Properties of Dy: Bi₄Si₃O₁₂ Crystals[J]. Journal of Inorganic Materials, 2016, 31(10): 1068-1072.

图/表 5

参考文献 15

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Sample/peak		FWHM	T_m/K	C₁	C₂	E₁/eV	E₂/eV	s₁/s^-1	s₂/s^-1	τ₁/s	τ₂/s
Pure BSO	Peak 1	39.5061	380.13	2.52	3.54	0.73	8.81	4.84E+9	5.71E+116	9.49	0.78
	Peak 2	53.7592	462.83	2.52	3.54	0.79	13.08	2.74E+8	2.11E+142	13.06	0.78
	Peak 3	56.0264	523.71	2.52	3.54	0.97	16.76	1.70E+9	1.40E+161	13.50	0.78
	Peak 4	33.8480	622.54	2.52	3.54	2.38	23.70	2.33E+18	5.01E+191	7.80	0.78
0.1mol% doped	Peak 1	64.6495	378.83	2.52	3.54	0.42	8.75	2.12E+4	2.26E+116	16.49	0.78
	Peak 2	90.8081	469.26	2.52	3.54	0.45	13.44	2589.01	2.06E+144	23..65	0.78
	Peak 3	169.3242	572.53	2.52	3.54	0.32	20.04	13.92	1.73E+176	48.78	0.78
	Peak 4	54.7902	620.69	2.52	3.54	1.42	23.56	2.61E+10	1.34 E+191	13.00	0.78
2mol% doped	Peak 1	69.3833	386.71	2.52	3.54	0.40	9.12	9.55 E+3	6.16E+118	17.84	0.78
	Peak 2	36.0224	428.42	2.52	3.54	1.03	11..20	1.65E+11	4.85E+131	8.51	0.78
	Peak 3	146.3480	539.56	2.52	3.54	0.34	17.79	35.67	1.11E+166	41.11	0.78
	Peak 4	78.8523	642.55	2.52	3.54	1.03	25.25	5.82 E+6	7.73 E+197	19.26	0.78
4mol% doped	Peak 1	39.5061	370.96	2.52	3.54	0.69	8.39	2.69E+8	8.32E+113	9.51	0.78
	Peak 2	53.7591	427.32	2.52	3.54	0.66	11.14	5.14E+6	2.22E+131	13.17	0.78
	Peak 3	56.0264	521.32	2.52	3.54	0.96	16.60	1.53E+8	2.56E+160	13.50	0.78
	Peak 4	33.8480	636.97	2.52	3.54	2.50	24.81	6.84E+18	1.45E+196	7.79	0.78

Sample/peak		FWHM	T_m/K	C₁	C₂	E₁/eV	E₂/eV	s₁/s^-1	s₂/s^-1	τ₁/s	τ₂/s
Pure BSO	Peak 1	39.5061	380.13	2.52	3.54	0.73	8.81	4.84E+9	5.71E+116	9.49	0.78
	Peak 2	53.7592	462.83	2.52	3.54	0.79	13.08	2.74E+8	2.11E+142	13.06	0.78
	Peak 3	56.0264	523.71	2.52	3.54	0.97	16.76	1.70E+9	1.40E+161	13.50	0.78
	Peak 4	33.8480	622.54	2.52	3.54	2.38	23.70	2.33E+18	5.01E+191	7.80	0.78
0.1mol% doped	Peak 1	64.6495	378.83	2.52	3.54	0.42	8.75	2.12E+4	2.26E+116	16.49	0.78
	Peak 2	90.8081	469.26	2.52	3.54	0.45	13.44	2589.01	2.06E+144	23..65	0.78
	Peak 3	169.3242	572.53	2.52	3.54	0.32	20.04	13.92	1.73E+176	48.78	0.78
	Peak 4	54.7902	620.69	2.52	3.54	1.42	23.56	2.61E+10	1.34 E+191	13.00	0.78
2mol% doped	Peak 1	69.3833	386.71	2.52	3.54	0.40	9.12	9.55 E+3	6.16E+118	17.84	0.78
	Peak 2	36.0224	428.42	2.52	3.54	1.03	11..20	1.65E+11	4.85E+131	8.51	0.78
	Peak 3	146.3480	539.56	2.52	3.54	0.34	17.79	35.67	1.11E+166	41.11	0.78
	Peak 4	78.8523	642.55	2.52	3.54	1.03	25.25	5.82 E+6	7.73 E+197	19.26	0.78
4mol% doped	Peak 1	39.5061	370.96	2.52	3.54	0.69	8.39	2.69E+8	8.32E+113	9.51	0.78
	Peak 2	53.7591	427.32	2.52	3.54	0.66	11.14	5.14E+6	2.22E+131	13.17	0.78
	Peak 3	56.0264	521.32	2.52	3.54	0.96	16.60	1.53E+8	2.56E+160	13.50	0.78
	Peak 4	33.8480	636.97	2.52	3.54	2.50	24.81	6.84E+18	1.45E+196	7.79	0.78

Sample	Relative light yield
CsI(Tl)	100.00%
BSO	4.96%
BSO: 0.1mol% Dy₂O₃	7.21%
BSO: 0.2mol% Dy₂O₃	6.87%
BSO: 0.3mol% Dy₂O₃	6.76%
BSO: 2mol% Dy₂O₃	3.75%
BSO: 3mol% Dy₂O₃	2.87%
BSO: 4mol% Dy₂O₃	2.21%

Sample	Relative light yield
CsI(Tl)	100.00%
BSO	4.96%
BSO: 0.1mol% Dy₂O₃	7.21%
BSO: 0.2mol% Dy₂O₃	6.87%
BSO: 0.3mol% Dy₂O₃	6.76%
BSO: 2mol% Dy₂O₃	3.75%
BSO: 3mol% Dy₂O₃	2.87%
BSO: 4mol% Dy₂O₃	2.21%

Dy³⁺掺杂Bi₄Si₃O₁₂晶体生长及其热释光特性

Growth and Thermo-luminescence Properties of Dy: Bi₄Si₃O₁₂ Crystals

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