铝掺杂对氧化锌压敏陶瓷电性能的影响

doi:10.15541/jim20160080

无机材料学报 ›› 2016, Vol. 31 ›› Issue (9): 981-986.DOI: 10.15541/jim20160080

铝掺杂对氧化锌压敏陶瓷电性能的影响

蔺家骏, 李盛涛, 何锦强, 刘文凤

(西安交通大学电力设备电气绝缘国家重点实验室, 西安710049)

收稿日期:2016-02-01 修回日期:2016-03-28 出版日期:2016-09-20 网络出版日期:2016-08-29
作者简介:蔺家骏(1990–), 男, 博士研究生. E-mail: 425964714@qq.com
基金资助:
国家重点基础研究发展计划(973计划)(2015CB251003)

Effect of Al Addition on Electrical Properties of ZnO-based Varistor Ceramics

LIN Jia-Jun, LI Sheng-Tao, HE Jin-Qiang, LIU Wen-Feng

(State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China)

Received:2016-02-01 Revised:2016-03-28 Published:2016-09-20 Online:2016-08-29
About author:LIN Jia-Jun. E-mail: 425964714@qq.com

摘要/Abstract

摘要：

研究了微量铝(Al)掺杂对氧化锌(ZnO)压敏陶瓷显微结构、电性能和本征点缺陷浓度等方面的影响及其作用机理。研究结果表明, 介电损耗峰值能够在一定程度上反映ZnO压敏陶瓷本征点缺陷浓度, 微量Al掺杂能够引起ZnO压敏陶瓷本征点缺陷浓度的显著降低。氧空位缺陷对应的损耗峰峰值从88.82下降到1.74, 锌填隙缺陷对应的损耗峰峰值从133.38下降到8.14。随着Al掺杂量的增加, ZnO压敏陶瓷平均晶粒尺寸从9.15 μm逐渐下降到6.24 μm, 而压敏电压从235 V/mm逐渐提高到292 V/mm。可见Al掺杂抑制了ZnO压敏陶瓷中本征点缺陷的形成, 而本征缺陷浓度的降低导致材料显微结构和电性能发生明显变化。本文阐述了Al掺杂对ZnO压敏陶瓷本征缺陷的影响机理, 建立了ZnO压敏陶瓷显微形貌、电性能、介电性能和本征点缺陷之间的联系。

关键词: ZnO压敏陶瓷, Al掺杂, 本征点缺陷

Abstract:

The influences of trace ionic Al addition on the microstructure, electrical properties and intrinsic defects concentration of ZnO-based varistor ceramics were investigated. The results show that the peak value of imaginary permittivity can be used to represent intrinsic defect concentration. Trace ionic Al addition greatly reduces the intrinsic defect concentrations, i.e. the peak value of imaginary permittivity, representing the oxygen vacancy defect decreases from 88.8 to 1.7, and the corresponding zinc interstitial defect decreasing from 133.4 to 8.1. With the increase of ionic Al addition, the varistor voltage increases from 235 V/mm to 292 V/mm and the average grain size decreases from 9.15 μm to 6.24 μm. The results indicate that Al addition effectively restrains the formation of intrinsic defects in ZnO-based varistor ceramics, leading to the change of microstructure and electrical properties. Furthermore, the inhibition mechanism of Al addition to the intrinsic defects in ZnO-based varistor ceramics is discussed, and the relationships between microstructure, electrical properties, dielectric properties and intrinsic defects are established.

Key words: ZnO-based varistor ceramic, Al dopant, intrinsic defect

中图分类号:

TM28

蔺家骏, 李盛涛, 何锦强, 刘文凤. 铝掺杂对氧化锌压敏陶瓷电性能的影响[J]. 无机材料学报, 2016, 31(9): 981-986.

LIN Jia-Jun, LI Sheng-Tao, HE Jin-Qiang, LIU Wen-Feng. Effect of Al Addition on Electrical Properties of ZnO-based Varistor Ceramics[J]. Journal of Inorganic Materials, 2016, 31(9): 981-986.

图/表 8

图1 不同Al掺杂量ZnO压敏陶瓷试样的XRD图谱

Fig. 1 XRD patterns of ZnO varistor ceramic samples doped with various Al amounts

表1 不同Al掺杂量ZnO压敏陶瓷试样ZnO晶粒晶格常数

Table 1 Lattice constant of ZnO grain in ZnO varistor ceramic samples doped with various Al amounts

Al amount/mol%	a /nm	c /nm
0	0.323947	0.518892
0.006	0.324105	0.519197
0.015	0.324071	0.519127
0.030	0.324173	0.519337

图2 不同Al掺杂量ZnO压敏陶瓷试样的SEM照片

Fig. 2 SEM images of ZnO varistor ceramic samples doped with various Al amounts

图3 不同Al掺杂量ZnO压敏陶瓷试样I-V特性

Fig. 3 I-V characteristics of ZnO varistor ceramic samples doped with various Al amounts

表2 不同Al掺杂量ZnO压敏陶瓷试样非线性系数和压敏电压

Table 2 Nonlinear coefficient and varistor voltage of ZnO varistor ceramic samples doped with various Al amounts

Sample	α	E /(V·mm^-1)
Al-0	41.98	235
Al-60	37.98	249
Al-150	20.56	272
Al-300	14.26	292

图4 不同Al掺杂量ZnO压敏陶瓷试样的室温(25℃)介电谱

Fig. 4 Dielectric spectra of ZnO varistor ceramic samples doped with various Al amounts at room temperature (25℃)

图5 不同Al掺杂量ZnO压敏陶瓷试样低温(-120℃~-60℃)介电频谱

Fig. 5 Dielectric spectrum of ZnO varistor ceramic samples doped with various Al amounts at low temperature (-120℃~-60℃)

图6 (a) 不同Al掺杂量ZnO压敏陶瓷试样-100℃介电谱和(b) 不同Al掺杂量试样的松弛峰峰值

Fig. 6 (a) Dielectric spectra of ZnO varistor ceramic samples doped with various Al amounts at -100℃ and (b) peak value of relaxation peak for samples doped with various Al amounts

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铝掺杂对氧化锌压敏陶瓷电性能的影响

Effect of Al Addition on Electrical Properties of ZnO-based Varistor Ceramics

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