双沟道层对氮掺杂非晶氧化铟锌薄膜晶体管的影响

doi:10.15541/jim20150613

无机材料学报 ›› 2016, Vol. 31 ›› Issue (7): 745-750.DOI: 10.15541/jim20150613

双沟道层对氮掺杂非晶氧化铟锌薄膜晶体管的影响

王乃倩¹, 张群¹, 谢汉萍²

(1. 复旦大学材料科学系, TFT-LCD关键材料及技术国家工程实验室, 上海 200433; 2. 台湾交通大学光电工程学系, 新竹 30010)

收稿日期:2015-12-07 修回日期:2016-01-11 出版日期:2016-07-20 网络出版日期:2016-06-22
作者简介:王乃倩(1990–), 女, 硕士研究生. E-mail: 13210300033@fudan.edu.cn
基金资助:
国家自然科学基金重点项目(61136004, 61471126)

Influence of Double Channel Layers on the Performance of Nitrogen Doped Indium-zinc-oxide Thin Film Transistors

WANG Nai-Qian¹, ZHANG Qun¹, SHIEH Han-Ping²

(1. Department of Material Science, Fudan University, National Engineering Lab of TFT-LCD Materials and Technologies, Shanghai 200433, China; 2. Department of Photonics, National Chiao Tung University, Hsinchu 30010, Taiwan, China)

Received:2015-12-07 Revised:2016-01-11 Published:2016-07-20 Online:2016-06-22
About author:WANG Nai-Qian. E-mail: 13210300033@fudan.edu.cn
Supported by:
National Natural Science Foundation of China (61136004, 61471126)

摘要/Abstract

摘要：

采用射频磁控溅射法, 在热氧化p型硅基片上制备了双沟道层非晶氧化铟锌(a-IZO)和氮掺杂氧化铟锌(a-IZON)薄膜晶体管(TFTs), 并研究了双沟道层对器件电学性能和温度稳定性的影响。研究发现, a-IZO/IZON双沟道层TFTs具有较高的场效应迁移率, 为23.26 cm²/(V•s), 并且其阈值电压相较于单层a-IZO-TFTs正向偏移。这是由于氮掺杂可以减少沟道层中的氧空位, 抑制载流子浓度, 使器件具有更好的阈值电压。而a-IZO层避免了由于氮掺杂导致的场效应迁移率和开态电流的下降, 提升了器件的电流开关比。从298 K至423 K的器件转移特性曲线中发现, 双沟道层器件相较于单沟道层器件的温度稳定性更佳, 这可归因于a-IZON层的保护作用。氮掺杂可以减少氧在背沟道层表面的吸收/解吸反应, 改善器件的稳定性。

关键词: 双沟道层, 氮气掺杂, 温度稳定性, 薄膜晶体管

Abstract:

The nitrogen-doped amorphous indium-zinc-oxide thin film transistors with double channel layers (a-IZO/IZON-TFTs) were fabricated by RF magnetron sputtering of IZO target on the thermal oxidized p-type Si substrate. Influence of the double channel layers on the electrical performance and thermal stability of the devices were investigated. It is found that a-IZO/IZON-TFTs have high field effect mobility of 23.26 cm²/(V•s) and more positively shifted threshold voltage than that of a-IZO-TFTs. This is ascribed to the doped nitrogen which can help reduce oxygen vacancy in the channel layer, suppress carrier concentration and make the devices have a better threshold voltage. Meanwhile, employing a-IZO thin film can avoid the sharp drop of field effect mobility and drain on current caused by nitrogen doping on a-IZON layer, leading to promoting I_on/I_off ratio effectively. Besides, according to the transfer characteristics measured at temperatures from 298 K to 423 K, devices with a-IZO/IZON double layers have superior performance and thermal stability to TFTs of single channel layer, which can be ascribed to the protective effect of a-IZON thin film on the channel layers. The doped nitrogen can reduce the adsorption/desorption reaction of oxygen molecules on the back channel layer, leading to a significant improvement on thermal stability of the devices.

Key words: double channel layers, nitrogen doped, thermal stability, thin film transistors

中图分类号:

TN321

王乃倩, 张群, 谢汉萍. 双沟道层对氮掺杂非晶氧化铟锌薄膜晶体管的影响[J]. 无机材料学报, 2016, 31(7): 745-750.

WANG Nai-Qian, ZHANG Qun, SHIEH Han-Ping. Influence of Double Channel Layers on the Performance of Nitrogen Doped Indium-zinc-oxide Thin Film Transistors[J]. Journal of Inorganic Materials, 2016, 31(7): 745-750.

图/表 7

图1 四种不同沟道层TFTs的结构示意图

Fig. 1 Schematic structure of the TFTs with various channel layers (a) a-IZO; (b) a-IZO/IZON; (c) a-IZON/IZO; (d) a-IZON

图2 四种不同沟道层薄膜的XRD图谱

Fig. 2 XRD patterns for different channel layers

图3 四种沟道层薄膜的透射率曲线

Fig. 3 Transmission curves of different channel layers

图4 具有不同沟道层结构的TFTs的转移特性曲线

Fig. 4 Transfer characteristics (ID-VG) curves of the TFTs with different structures of channel layers

表1 不同沟道层TFTs的性能指标

Table 1 Charateristics of the TFTs with different channel layers

Channel layers	μ_FE/ (cm²·V^-1·s^-1)	V_th /V	S.S/ V∙dec^-1	I_on/off
a-IZO	27.98	-3.0	0.5	3.1×10⁸
a-IZO/IZON	23.26	-2.5	0.5	1.6×10⁸
a-IZON/IZO	21.02	-1.5	0.5	8.3×10⁷
a-IZON	14.50	0.5	0.8	1.2×10⁸

图5 不同测试温度下, 不同沟道层TFTs的转移特性曲线

Fig. 5 Transfer characteristics (ID-VG) curves of the TFTs tested at different temperatures (a) a-IZO; (b) a-IZO/IZON; (c) a-IZON/IZO; (d) a-IZON

图6 不同沟道层TFTs阈值电压变化量的温度依赖性

Fig. 6 Temperature dependency of ∆Vth for TFTs with different channel layers

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双沟道层对氮掺杂非晶氧化铟锌薄膜晶体管的影响

Influence of Double Channel Layers on the Performance of Nitrogen Doped Indium-zinc-oxide Thin Film Transistors

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