平面Si/PCBM与纳米Si/PCBM有机-无机杂化异质结的对比研究

doi:10.15541/jim20140411

无机材料学报 ›› 2015, Vol. 30 ›› Issue (2): 214-218.DOI: 10.15541/jim20140411

平面Si/PCBM与纳米Si/PCBM有机-无机杂化异质结的对比研究

刘维峰¹, 边继明^1,2, 骆瑛琳¹, 乔建坤¹, 赵春一¹

(1. 大连理工大学三束材料改性教育部重点实验室, 物理与光电工程学院, 大连 116024; 2. 中国科学院特种无机涂层重点实验室, 上海 200050)

收稿日期:2014-08-14 出版日期:2015-12-10 网络出版日期:2015-01-27
作者简介:刘维峰. E-mail: lwf008@163.com

Comparative Study on Planar-silicon and Nano-silicon Si/PCBM Inorganic-organic Hybrid Junctions

LIU Wei-Feng¹, BIAN Ji-Ming^1,2, LUO Ying-Lin¹, QIAO Jian-Kun¹, ZHAO Chun-Yi¹

(1. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China; 2. Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai 200050, China)

Received:2014-08-14 Published:2015-12-10 Online:2015-01-27
About author:LIU Wei-Feng(1976–), male, lecturer. E-mail: lwf008@163.com
Supported by:
Natural Science Foundation of Liaoning Province (2013020095);Fundamental Research Funds for the Central Universities (DUT13LK02, DUT13LAB12)

摘要/Abstract

摘要：

本研究采用平面硅与纳米硅分别与旋涂法生长的[6,6]-苯基C61-丁酸甲酯(PCBM)形成有机-无机杂化异质结,对比研究了两种异质结界面电学特性的差异。结果显示, 平面Si/PCBM和纳米Si/PCBM两种异质结都表现出明显的整流特性, 但相对于平面Si/PCBM异质结, 纳米Si/PCBM异质结有较大的导通电压和较小的电流密度。为了深入研究导致这种差异的相关物理机制, 通过阻抗谱(IS)表征技术进一步研究了两种异质结因界面变化而产生的电阻、电容的变化趋势。阻抗测试分析表明, Si/PCBM异质结界面存在的大量缺陷致使寄生效应进一步增大, 影响了器件中电荷的输运。

关键词: 无机-有机异质结, 纳米Si/PCBM, 阻抗谱, 瞬态光伏谱

Abstract:

Inorganic-organic heterojunction devices based on organic polymer and inorganic semiconductors has attracted extensive attention for high performance hybrid solar cell applications, due to the combined advantage of high carrier mobility of inorganic semiconductors and easy processing, strong absorption of organic polymers. In this study, both planar-Si and nano-Si were combined with spin-coated [6, 6]-phenyl C61-butyric acid methyl ester (PCBM) organic film to form Si/PCBM inorganic/organic hybrid junctions. A comparative study was performed through quantitative electrical analysis of planar-Si/PCBM and nano-Si/PCBM, respectively. In general, both devices exhibited a rectifying diode-like behavior. However, a higher turn-on voltage and smaller current density were observed from nano-Si/ PCBM junctions, which was in contradiction with the expectation from the view of junction area. The corresponding mechanisms were further investigated with measurements of impedance spectroscopy (IS). Our results indicated that this abnormal electrical characteristic of nano-Si/PCBM compared with normal p-n junction was highly associated with the parasitic effects caused by the defect states at the junction interface.

Key words: inorganic-organic heterojunction, nano-Si/PCBM, impedance spectroscopy

中图分类号:

TB34

刘维峰, 边继明, 骆瑛琳, 乔建坤, 赵春一. 平面Si/PCBM与纳米Si/PCBM有机-无机杂化异质结的对比研究[J]. 无机材料学报, 2015, 30(2): 214-218.

LIU Wei-Feng, BIAN Ji-Ming, LUO Ying-Lin, QIAO Jian-Kun, ZHAO Chun-Yi. Comparative Study on Planar-silicon and Nano-silicon Si/PCBM Inorganic-organic Hybrid Junctions[J]. Journal of Inorganic Materials, 2015, 30(2): 214-218.

图/表 4

Fig. 1 Three-dimensional schematic diagrams of planar-Si/PCBM and nano-Si/PCBM inorganic/organic, the middle is cross-sectional SEM images of planar-Si and nano-Si

Fig. 2 I-V curves of the planar-Si/PCBM and nano-Si/PCBM inorganic/organic heterojunctions

Fig. 3 The cole-cole plots of planar-Si/PCBM heterojunction(a) and nano-Si/PCBM heterojunction with the equivalent electrical circuit (inset), (b) and their CPE-P values (CPE-P1 and CPE-P2, respectively) against the ideal value (c)

Table 1 Summary of the circuit parameters obtained from the software of Z-view

Bias/V	planar-Si/PCBM heterojuntion				nano-Si/PCBM heterojuntion
Bias/V	R_p1/MΩ	CPE-T₁/F		CPE-P₁	R_p2/MΩ	CPE-T₂/F	CPE-P₂
0	0.425000	3.87×10^-8	0.89571		3.390000	3.52×10^-8	0.89312
0.1	0.056518	4.22×10^-8	0.97869		0.646970	4.12×10^-8	0.87240
0.2	0.023646	3.61×10^-8	0.80414		0.132260	5.96×10^-8	0.83301
0.3	0.007371	2.34×10^-8	0.85180		0.043541	6.47×10^-8	0.87478
0.4	0.001279	1.86×10^-8	0.87707		0.030387	3.41×10^-8	0.53783
0.5	0.000820	1.39×10^-8	0.92249		0.014757	2.92×10^-8	0.54729

参考文献 16

[1]	RIEDE M, UHRICH C, WIDMER J, et al.Efficient organic tandem solar cells based on small molecules.Adv. Funct. Mater., 2011, 21(16): 3019-3028.
[2]	DONG X W, PAN Q Y, HUANG YAN, et al.Novel organic-inorganic photochromic film based on mono-vacant Keggin-type polyoxometalates.J. Inorg. Mater. 2007, 22(2): 369-372.
[3]	LIU C Y, HOLMAN Z C, KORTSHAGEN U R, et al.Hybrid solar cells from P3HT and silicon nanocrystals.Nano Lett., 2009, 9(1): 449-452.
[4]	LIU C Y, HOLMAN Z C, KORTSHAGEN U R, et al.Optimization of Si NC/P3HT hybrid solar cells.Adv. Funct. Mater., 2010, 20(13): 2157-2164.
[5]	CHANG J A, RHEE J H, IM S H, et al.High-performance nanostructured inorganic organic heterojunction solar cells.Nano Lett., 2010, 10(7): 2609-2612.
[6]	HUYNH W U, DITTMER J J, ALIVISATOS A P, et al.Hybrid nanorod-polymer solar cells.Science, 2002, 295(5564): 2425-2427.
[7]	KOLNENKAMP R, WORD R C, GODINEZ M, et al.Ultraviolet electroluminescence from ZnO/polymer heterojunction lighemitting diodes.Nano Lett., 2005, 5(10): 2005-2008.
[8]	BOUCLE J, SNAITH H J, GREENHAM N C, et al.Simple approach to hybrid polymer porous metal oxide solar cells from solution- processed ZnO nanocrystals.J. Phys. Chem. C, 2010, 114(8): 3664-3674.
[9]	BEEK W J E, WIENK M M, JANSSEN R A J, et al. Efficient hybrid solar cells from zinc oxide nanoparticles and a conjugated polymer.Advanced Materials, 2004, 16(12): 1009-1013.
[10]	ZHANG K, LI J, LI Q, et al.Improvement on electrochemical performance by electrodeposition of polyaniline nanowires at the top end of sulfur electrode.Appl. Surf. Sci., 2013, 285(10): 900-906.
[11]	LIU W F, BIAN J M, ZHAO Z C, et al.Low temperature surface passivation of black silicon solar cells by high-pressure O2 thermal oxidation.ECS Solid State Lett., 2013, 2(4): Q17-Q20.
[12]	WU W, BIAN J M, SUN J C, et al.A comparative study of ZnO film and nanorods for ZnO/polyfluorene inorganic/organic hybrid junction.J. Alloys Compd., 2012, 534(9): 1-5.
[13]	BADRAN R I, UMAR A, AL-HENITI S, et al.Synthesis and characterization of zinc oxide nanorods on silicon for the fabrication of p-Si/n-ZnO heterojunction diode.J. Alloys Compd., 2010, 508(2): 375-379.
[14]	WALTER T, HERBERHOLZ R, MULLER C, et al.Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctions.J. Appl. Phys., 1996, 80: 4411-4420.
[15]	BOUZITOUN M, DRIDI C, CHAABANE R B, et al.Electrical properties of ITO/benzylated cyclodextrins(b-CDs (Bz))/Al diode structures.Sci. Technol.Adv. Mat., 2006, 7: 772-779.
[16]	MUSSELMAN K P, MARIN A, WISNET A, et al.A novel buffering technique for aqueous processing of zinc oxide nanostructures and interfaces.Adv. Funct. Mater., 2011, 21(3): 573-582.

平面Si/PCBM与纳米Si/PCBM有机-无机杂化异质结的对比研究

Comparative Study on Planar-silicon and Nano-silicon Si/PCBM Inorganic-organic Hybrid Junctions

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