流延法制备片式CaCu3Ti4O12陶瓷及其性能研究

doi:10.15541/jim20140255

摘要/Abstract

摘要：

片式CaCu₃Ti₄O₁₂陶瓷由于其巨介电效应, 用于制备多层陶瓷片式电容具有重大意义。通过水基流延法并在不同的烧结温度下制备的片式CaCu₃Ti₄O₁₂陶瓷具有优异的介电性能。其中在1080℃下烧结的样品在保持巨电容率(98605)的同时, 降低了介电损耗, 其值只有0.028, 远低于其他报道的损耗值。同时, 测试了CCTO陶瓷薄片的复阻抗图谱, 讨论了CCTO陶瓷的特殊的电学性能。实验结果表明, 通过流延成型制备的CCTO陶瓷薄片在保持巨电容率的同时具有很低的介电损耗, 这为CCTO陶瓷在微电子工业上的应用提供了可能性。

关键词: 钙钛矿, 流延法, 介电性能, 晶界

Abstract:

Thin ceramic sheet of CaCu₃Ti₄O₁₂ has a great significance for preparation of multiplayer ceramic chip capacitors. In this work, a simple plan was made to achieve CaCu₃Ti₄O₁₂ thin ceramic sheets with excellent dielectric properties. Thin ceramic sheets of CaCu₃Ti₄O₁₂ were prepared via water-based tape casting at various sintering temperatures. The CaCu₃Ti₄O₁₂ samples sintered at 1080℃ exhibit a great performance on dielectric properties with high permittivity (ε_r=98605) and low dielectric loss (tanδ=0.028) which are better than those of samples prepared by conventional dry pressing. Meanwhile, the complex impedance spectra were measured to explain the mechanism of special electrical behaviors of CaCu₃Ti₄O₁₂ ceramics. These testing results indicate that the CaCu₃Ti₄O₁₂ ceramics via tape casting exhibits a better performance of giant permittivity and lower dielectric loss than other reports, which provides a possibility for the application of the CaCu₃Ti₄O₁₂ in modern micro-electronics technology.

Key words: perovskite, tape casting, dielectric properties, grain boundary

中图分类号:

TQ174

李伟, 熊兆贤, 薛昊. 流延法制备片式CaCu₃Ti₄O₁₂陶瓷及其性能研究[J]. 无机材料学报, 2014, 29(11): 1228-1232.

LI Wei, XIONG Zhao-Xian, XUE Hao. Preparation and Electrical Properties of CaCu₃Ti₄O₁₂ Thin Ceramic Sheets via Water-based Tape Casting[J]. Journal of Inorganic Materials, 2014, 29(11): 1228-1232.

图/表 7

Fig. 1 XRD patterns of thin CCTO ceramic sheets sintered at different temperatures, comparing with CCTO (PDF 01-075-1149)

Fig. 2 SEM images of the CaCu3Ti4O12 samples sintered at (a) 1040℃, (b) 1060℃, (c) 1080℃ and (d) 1100℃

Fig. 3 SEM images of the sample sintered at 1080℃ (a and b), EDX patferns of grain (c) and grain boundary region (d)

Fig. 4 Frequency dependence of permittivity and loss of samples sintered at different temperatures at room temperature

Fig. 5 Temperature dependence of permittivity and loss of samples sintered at different temperatures

Fig. 6 Complex impedance plane measured at room temperature (25℃) for CaCu3Ti4O12 samples sintered at different temperatures Inset in (a) shows an expanded views of the high-frequency data and in (b) shows an expanded views of the high-frequency data close to the origin

Fig. 7 Improved equivalent circuit model according to the IBLC and Schottky barrier model Grains and grain boundaries respectively correspond to a RCD element. Diode stand for a Schottky-type potential barrier

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流延法制备片式CaCu₃Ti₄O₁₂陶瓷及其性能研究

Preparation and Electrical Properties of CaCu₃Ti₄O₁₂ Thin Ceramic Sheets via Water-based Tape Casting

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