单靶磁控溅射制备铜铟硒和铜铟锌硒薄膜及其结构、光学性质研究

doi:10.15541/jim20140309

无机材料学报 ›› 2014, Vol. 29 ›› Issue (11): 1223-1227.DOI: 10.15541/jim20140309

单靶磁控溅射制备铜铟硒和铜铟锌硒薄膜及其结构、光学性质研究

王伟君, 何俊, 张克智, 陶加华, 孙琳, 陈晔, 杨平雄, 褚君浩

(华东师范大学电子工程系, 极化材料与器件教育部重点实验室, 上海 200241)

收稿日期:2014-06-16 出版日期:2014-11-20 网络出版日期:2014-10-24

Structure and Optical Properties of CuInSe₂ and Cu_0.9In_0.9Zn_0.2Se₂ Thin Films Deposited by One-step Radio-frequency Magnetron Sputtering

WANG Wei-Jun, HE Jun, ZHANG Ke-Zhi, TAO Jia-Hua, SUN Lin, CHEN Ye, YANG Ping-Xiong, CHU Jun-Hao

(Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China)

Received:2014-06-16 Published:2014-11-20 Online:2014-10-24
Supported by:
Foundation item: Shanghai Committee of Science and Technology(11ZR1411400, 10JC1404600);National Natural Science Foundation of China(61106064, 60990312, 61076060)

摘要/Abstract

摘要：

采用单靶磁控溅射法制备了铜铟硒(CIS)和铜铟锌硒(CIZS)薄膜。XRD表征发现CIZS-300出现了与其它薄膜不同的择优取向, 分析认为贫铜的状态和适宜温度可能促使薄膜择优取向从(112)向(220)转化; 拉曼光谱在171 cm^-1处出现的较强峰, 和206 cm^-1处出现的较弱峰, 分别为A₁和B₂振动模式, 而Zn的掺入导致A₁拉曼峰的宽化和蓝移; Zn的掺入使Cu含量改变进而使CIZS禁带宽度增大, 这是由于Se的p轨道和Cu的d轨道杂化引起的; SEM测试结果表明CIZS薄膜表面比CIS表面更为紧密、平滑。

关键词: 磁控溅射, 铜铟锌硒, 锌掺杂

Abstract:

CuInSe₂ (CIS) and Cu_0.9In_0.9Zn_0.2Se₂ (CIZS) thin films were deposited by Radio-Frequency (RF) magnetron sputtering process. X-ray diffraction (XRD) results indicate CIZS film deposited at 300℃ (CIZS-300) is (220) preferred orientation which is different from (112) preferred orientation of other films. Cu-poor and appropriate temperature are major factors for (220) preferred orientation of grains. The Raman spectra show a strong peak around 171 cm^-1 and a weak peak around 206 cm^-1, which corresponding to A₁ and B₂ modes. Substitution of Zn for Cu leads to a broadening and blue-shift of A₁ Raman mode. The band gap E_opt of CIZS film increases due to a reduced Se p-Cu d interband repulsion with Zn doping. Scanning electron microscope (SEM) measurement demonstrates that the surface morphology of CIZS is more compact and smoother than that of CIS thin films.

Key words: magnetron sputtering, CIZS thin film, Zn doping

中图分类号:

TQ174

王伟君, 何俊, 张克智, 陶加华, 孙琳, 陈晔, 杨平雄, 褚君浩. 单靶磁控溅射制备铜铟硒和铜铟锌硒薄膜及其结构、光学性质研究[J]. 无机材料学报, 2014, 29(11): 1223-1227.

WANG Wei-Jun, HE Jun, ZHANG Ke-Zhi, TAO Jia-Hua, SUN Lin, CHEN Ye, YANG Ping-Xiong, CHU Jun-Hao. Structure and Optical Properties of CuInSe₂ and Cu_0.9In_0.9Zn_0.2Se₂ Thin Films Deposited by One-step Radio-frequency Magnetron Sputtering[J]. Journal of Inorganic Materials, 2014, 29(11): 1223-1227.

图/表 6

Fig. 1 Chemical composition of CIS, CIZS theoretical value and their corresponding experiment results

Fig. 2 Normalized XRD patterns of CIS target, CIZS target and their corresponding thin films deposited at room temperature and 300℃

Fig. 3 Raman spectra of CIS and CIZS thin films deposited at with different substrate temperatures

Fig. 4 The transmittance of CIS and CIZS thin films deposited at RT and 300℃, respectively

Fig. 5 Eopt of CIS and CIZS thin films deposited at RT and 300℃, respectively

Fig. 6 SEM surface micrographs and cross-sectional image of CIS and CIZS thin films

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单靶磁控溅射制备铜铟硒和铜铟锌硒薄膜及其结构、光学性质研究

Structure and Optical Properties of CuInSe₂ and Cu_0.9In_0.9Zn_0.2Se₂ Thin Films Deposited by One-step Radio-frequency Magnetron Sputtering

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单靶磁控溅射制备铜铟硒和铜铟锌硒薄膜及其结构、光学性质研究

Structure and Optical Properties of CuInSe2 and Cu0.9In0.9Zn0.2Se2 Thin Films Deposited by One-step Radio-frequency Magnetron Sputtering

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Structure and Optical Properties of CuInSe₂ and Cu_0.9In_0.9Zn_0.2Se₂ Thin Films Deposited by One-step Radio-frequency Magnetron Sputtering