室温下制备非晶ZnO薄膜及其电阻开关特性研究

doi:10.15541/jim20140037

无机材料学报 ›› 2014, Vol. 29 ›› Issue (11): 1161-1166.DOI: 10.15541/jim20140037

室温下制备非晶ZnO薄膜及其电阻开关特性研究

张涛, 徐智谋, 武兴会, 刘斌昺

(华中科技大学光学与电子信息学院, 武汉 430074)

收稿日期:2014-01-15 修回日期:2014-05-20 出版日期:2014-11-20 网络出版日期:2014-10-24
作者简介:张涛(1989–)，男，硕士研究生. E-mail: 976258091@qq.com
基金资助:
国家自然科学基金重点项目(61076042) National Natural Science Foundation of China(61076042)

Deposition of Amorphous Zinc Oxide Thin Film at Room Temperature and Its Resistive Switching Characteristics

ZHANG Tao, XU Zhi-Mou, WU Xing-Hui, LIU Bin-Bing

(School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China)

Received:2014-01-15 Revised:2014-05-20 Published:2014-11-20 Online:2014-10-24
About author:ZHANG Tao. E-mail: 976258091@qq.com

摘要/Abstract

摘要：

室温下采用紫外固化的方法取代溶胶-凝胶方法中的高温退火制备了氧化锌薄膜, XRD分析结果表明薄膜为非晶的, XPS分析结果表明薄膜的主要成分是ZnO。在深紫外固化后的薄膜表面溅射Al作为顶电极获得Al/a-ZnO/FTO结构的器件,研究深紫外照射时间对器件电阻转变性能的影响, 进一步解释了深紫外固化的机制。研究表明: 经过充足时间(12 h)照射的器件表现出双极性电阻开关特性,阈值电压分布集中(-3.7 V<V_set<-2.9 V, 3.4 V< V_reset<4.3 V)且符合低电压工作的要求, 至少在4000 s内器件的高低阻态都没有发生明显的退化, 表现出了良好的存储器特性。Al/a-ZnO/FTO器件的这种电阻转变特性可以用空间电荷限制电流传导机制解释。

关键词: 深紫外固化, 电阻开关, 非晶态氧化锌薄膜

Abstract:

Amorphous zinc oxide thin film was prepared through Sol-Gel method using deep-ultraviolet photochemical activation instead of high temperature annealing. The XRD patterns showed that the zinc oxide film was amorphous. XPS analysis showed that the film was mainly composed of ZnO. The Al top electrodes were deposited on irradiated thin film by DC magnetron sputtering to get Al/a-ZnO/FTO structured device. The influence of deep-ultraviolet irradiation time on switching properties was investigated to understand the mechanism of deep-ultraviolet irradiation. The results illustrate that the device after sufficient irradiation (12 h) has bipolar resistive switching property. The distribution of threshold voltage is very concentrated (-3.7 V<V_set<-2.9 V, 3.4 V<V_reset<4.3 V) which meets the need of low voltage operation of the memories. Both HRS and LRS have not obviously attenuated for at least 4000 s. The resistive switching behavior of the Al/a-ZnO/FTO device can be explained by the trap-charged space-charge-limited current mechanism.

Key words: deep-ultraviolet irradiation, resistive switching, amorphous zinc oxide thin film

中图分类号:

TN303
TN3894

张涛, 徐智谋, 武兴会, 刘斌昺. 室温下制备非晶ZnO薄膜及其电阻开关特性研究[J]. 无机材料学报, 2014, 29(11): 1161-1166.

ZHANG Tao, XU Zhi-Mou, WU Xing-Hui, LIU Bin-Bing. Deposition of Amorphous Zinc Oxide Thin Film at Room Temperature and Its Resistive Switching Characteristics[J]. Journal of Inorganic Materials, 2014, 29(11): 1161-1166.

图/表 5

图1 氧化锌/FTO衬底的截面SEM照片

Fig. 1 SEM image of cross sectional zinc oxide film on the FTO substrate

图2 不同照射时间的氧化锌薄膜XRD图谱(a)、O1s(b)和Zn2p(c)XPS图谱以及不同照射时间所得薄膜的原子组成比例(d)

Fig. 2 XRD patterns of zinc oxide film irradiated with different time (a), O1s (b) and Zn2p (c) XPS spectra of zinc oxide film and atomic composition ratios of zinc oxide film with different irradiation time (d)

图3 Zn(NO3)2 溶于 2-ME溶胶的光吸收特性

Fig. 3 Light absorption characteristic of the Zn(NO3)2 in 2-ME sol

图4 不同深紫外照射时间下Al/a-ZnO/FTO的I-V特性曲线

Fig. 4 I-V curves of Al/a-ZnO/FTO under different DUV time

图 5 Al/a-ZnO薄膜电阻转变特性

Fig. 5 Resistance property of Al/a-ZnO/FTO (a) I-V curves; (b) I-V curves of the Al/a-ZnO/FTO device under negative bias voltage direction in the double logarithmic coordinates(the number within the plot indicates the slope of I-V curve); (c) Distribution of threshold voltage of Al/a-ZnO/FTO device; (d) Retention properties of resistance state at room temperature; (e) Switching endurance characteristic under continued sweep cycles

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室温下制备非晶ZnO薄膜及其电阻开关特性研究

Deposition of Amorphous Zinc Oxide Thin Film at Room Temperature and Its Resistive Switching Characteristics

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