氢气与Cu中间层对GZO薄膜光电性能的影响

doi:10.3724/SP.J.1077.2014.13396

无机材料学报 ›› 2014, Vol. 29 ›› Issue (5): 493-497.DOI: 10.3724/SP.J.1077.2014.13396

氢气与Cu中间层对GZO薄膜光电性能的影响

吕坤, 祝柏林, 李珂, 胡文超, 谢铭, 吴隽

(武汉科技大学钢铁冶金及资源利用省部共建教育部重点实验室, 武汉 430081)

收稿日期:2013-08-07 修回日期:2013-09-22 出版日期:2014-05-20 网络出版日期:2014-04-24
作者简介:吕坤(1989–), 男, 硕士研究生.
基金资助:
高性能陶瓷和超微结构国家重点实验室开放课题(SKL201110SIC)

Effect of Hydrogen and Cu Interlayer on the Optical and Electrical Properties of GZO Thin Film

LV Kun, ZHU Bai-Lin, LI Ke, HU Wen-Chao, XIE Ming, WU Jun

(Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081, China)

Received:2013-08-07 Revised:2013-09-22 Published:2014-05-20 Online:2014-04-24
About author:LV Kun.
Supported by:
The Open Project of High Performance Ceramics and Superfine Structure of National Key Laboratory(SKL201110SIC)

摘要/Abstract

摘要： 采用磁控溅射方法, 在H₂/Ar混合气氛下制备了GZO薄膜和在Ar气氛下制备了GZO/Cu/GZO多层结构薄膜, 分别研究了H2流量和Cu层厚度对薄膜透明导电性能的影响。在此基础上, 在H₂/Ar混合气氛下制备了GZO/Cu/GZO多层结构薄膜, 对Cu层厚度对其性能的影响进行了研究。结果表明, 沉积气氛中引入H₂能有效降低GZO薄膜的电阻率而提高其透光率, 在H₂流量为20 sccm时GZO薄膜具有最佳性能。随着Cu厚度的增加, GZO/Cu/GZO多层结构薄膜的电阻率和平均透过率显著下降。在H₂/Ar混合气氛下制备的氢化GZO/Cu/GZO多层结构薄膜的电阻率普遍低于Ar气氛下制备的GZO/Cu/GZO多层结构薄膜, 但其透光率却随Cu层厚度的增加而显著降低。另外, 薄膜的禁带宽度随H₂流量的增加而增加, 随Cu层厚度的增加而减小。

关键词: GZO薄膜, 多层膜结构, 氢掺杂, 透明导电薄膜, 光电性能

Abstract: By method of magnetron sputtering, GZO thin films were deposited in H₂+Ar atmosphere and GZO/Cu/GZO thin films were deposited in Ar atmosphere. Effects of H₂ flux and Cu interlayer thickness on the optical and electrical properties of the films were investigated, respectively. Furthermore, GZO/Cu/GZO films were also deposited in H₂+Ar and the properties of films were investigated as a function of Cu interlayer thickness. The results show that introduction of H₂ into deposition atmosphere can effectively decrease the resistivity and enhance the transmittance of GZO films. The best figure of merit is obtained for the films deposited at H₂ flux of 20 sccm. With increasing Cu interlayer thickness, both the resistivity and transmittance of the GZO/Cu/GZO multilayer film are decreased. After introducing H₂ into deposition atmosphere, the transmittance of GZO/Cu/GZO multilayer film is remarkably decreased although its resistivity is further decreased with increasing Cu interlayer thickness. In addition, it is found that the energy gap (E_g) of the films increases with H2 flux increasing, while it decreases with Cu interlayer thickness increasing.

Key words: GZO thin film, multilayer film, hydrogen doping, transparent conductive film, optical and electrical property

中图分类号:

TN304

吕坤, 祝柏林, 李珂, 胡文超, 谢铭, 吴隽. 氢气与Cu中间层对GZO薄膜光电性能的影响[J]. 无机材料学报, 2014, 29(5): 493-497.

LV Kun, ZHU Bai-Lin, LI Ke, HU Wen-Chao, XIE Ming, WU Jun. Effect of Hydrogen and Cu Interlayer on the Optical and Electrical Properties of GZO Thin Film[J]. Journal of Inorganic Materials, 2014, 29(5): 493-497.

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氢气与Cu中间层对GZO薄膜光电性能的影响

Effect of Hydrogen and Cu Interlayer on the Optical and Electrical Properties of GZO Thin Film

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