磷酸处理对多孔SiO2薄膜质子导电特性和双电层薄膜晶体管性能的影响

doi:10.3724/SP.J.1077.2014.13404

无机材料学报 ›› 2014, Vol. 29 ›› Issue (5): 482-486.DOI: 10.3724/SP.J.1077.2014.13404

磷酸处理对多孔SiO₂薄膜质子导电特性和双电层薄膜晶体管性能的影响

万相^1,2, 刘阳辉¹, 张洪亮¹

(1. 中国科学院宁波材料技术与工程研究所, 宁波 315201; 2. 中国科学技术大学纳米科学技术学院, 苏州215123)

收稿日期:2013-08-07 修回日期:2013-10-30 出版日期:2014-05-20 网络出版日期:2014-04-24
作者简介:万相(1989–), 男, 硕士研究生. E-mail: wanxiang@nimte.ac.cn
基金资助:
国家自然科学基金(51302276, 51102187); 浙江省博士后择优项目(BSH1302050)

Effects of H₃PO₄ Treated Porous SiO₂ on Proton Conductivity and Performances of EDL-TFTs

WAN Xiang^1,2, LIU Yang-Hui¹, ZHANG Hong-Liang¹

(1. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China; 2. Nano Science and Technology, University of Science and Technology of China, Suzhou 215123, China)

Received:2013-08-07 Revised:2013-10-30 Published:2014-05-20 Online:2014-04-24
About author:WAN Xiang. E-mail: wanxiang@nimte.ac.cn
Supported by:
National Natural Science Foundation of China (51302276, 51102187); Postdoctoral Research Preferred Funds (BSH1302050)

摘要/Abstract

摘要： 采用等离子体增强化学气相沉积法(PECVD)制备了多孔SiO₂薄膜, 系统地研究了不同浓度磷酸处理对多孔SiO₂薄膜的质子导电特性、双电层电容和以此多孔SiO₂薄膜为栅介质的铟锌氧(IZO)双电层薄膜晶体管性能的影响。结果表明: 多孔SiO₂薄膜的质子电导率和双电层电容随磷酸浓度升高而增大, 60%浓度磷酸处理后多孔SiO₂薄膜质子电导率和双电层电容分别达到1.51×10^-4 S/cm和6.33 μF/cm²。随磷酸浓度升高, 双电层薄膜晶体管的工作电压降低, 并且, 电流开关比也变大。其中60%浓度磷酸处理后器件工作电压为1.2 V, 迁移率为20 cm²/(V·s), 电流开关比为4×10⁶。这种双电层薄膜晶体管有望应用在化学和生物传感等领域。

关键词: 双电层, 薄膜晶体管, 磷酸处理, 多孔SiO₂

Abstract: Porous SiO₂ films were deposited by plasma enhanced chemical vapor deposition and were treated by H₃PO₄ solution with various concentrations. Then indium-zinc-oxide (IZO) electric-double-layer thin-film transistors (EDL- TFTs) were fabricated by using such porous SiO₂ films as the gate dielectrics. The effects of H₃PO₄ treatments on the proton conductivity and EDL capacitance of porous SiO₂ films and on the performances of EDL-TFTs were investigated systematically. The proton conductivity and EDL capacitance of SiO₂ films increase with the H₃PO₄ concentration increase. A high proton conductivity of 1.51×10^-4 S/cm and a large EDL capacitance of 6.33 μF/cm² are obtained for porous SiO₂ films which were treated with 60% H₃PO₄ solution. The operating voltage decreases and the on/off ratio increases with the increasing H₃PO₄ concentration. The EDL-TFTs gated by porous SiO₂ films treated with 60% H₃PO₄ solution show the best performance with a low operating voltage of 1.2 V, a high mobility of 20 cm²/(V·s), and a large on/off ratio of 4×10⁶. Such EDL-TFTs are promising for biosensors and chemical sensors in the future.

Key words: electric-double-layer, thin-film-transistors, H₃PO₄ treatment, porous SiO₂

中图分类号:

TN321

万相, 刘阳辉, 张洪亮. 磷酸处理对多孔SiO₂薄膜质子导电特性和双电层薄膜晶体管性能的影响[J]. 无机材料学报, 2014, 29(5): 482-486.

WAN Xiang, LIU Yang-Hui, ZHANG Hong-Liang. Effects of H₃PO₄ Treated Porous SiO₂ on Proton Conductivity and Performances of EDL-TFTs[J]. Journal of Inorganic Materials, 2014, 29(5): 482-486.

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磷酸处理对多孔SiO₂薄膜质子导电特性和双电层薄膜晶体管性能的影响

Effects of H₃PO₄ Treated Porous SiO₂ on Proton Conductivity and Performances of EDL-TFTs

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