无机材料学报 ›› 2014, Vol. 29 ›› Issue (5): 449-460.DOI: 10.3724/SP.J.1077.2014.13669

• 综述 •    下一篇

铋层状结构铁电体的研究进展

张发强1, 2, 李永祥1   

  1. (1. 中国科学院 上海硅酸盐研究所, 信息功能材料与器件研究中心, 上海 200050; 2. 中国科学院大学, 北京100049)
  • 收稿日期:2013-12-19 修回日期:2014-01-23 出版日期:2014-05-20 网络出版日期:2014-04-24
  • 作者简介:张发强(1986-), 男, 博士研究生. E-mail: zhangfq@student.sic.ac.cn
  • 基金资助:

    国家自然科学基金重点项目(50932007); 国际科技部973项目(2009CB613305)

Recent Progress on Bismuth Layer-structured Ferroelectrics

ZHANG Fa-Qiang1, 2, LI Yong-Xiang1   

  1. (1. The Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; 2. University of Chinese Academy of Sciences, Beijing 100049, China)
  • Received:2013-12-19 Revised:2014-01-23 Published:2014-05-20 Online:2014-04-24
  • About author:ZHANG Fa-Qiang. E-mail: zhangfq@student.sic.ac.cn
  • Supported by:

    National Natural Science Foundation of China (50932007); The Ministry of Science and Technology Project 973(2009CB613305)

摘要: 铋层状结构铁电体 (BLSF) 作为一种类钙钛矿无铅铁电压电材料, 由于其在高温、高频以及非易失性铁电随机存储器等领域具有突出的综合优势, 因而受到广泛关注。本文以BLSF的综合特征为基础, 对其结构设计和微结构研究中存在的问题进行了详细探讨, 并重点总结了近二十年来其在性能优化和薄膜制备中取得的进展。此外, 本文还对一些以铁电为背景的新的研究方向做了介绍。最后提出了BLSF在未来发展中值得关注的几个重要问题。

关键词: 铋层状结构, 铁电体, 无铅压电陶瓷, 非易失性铁电随机存储器, 综述

Abstract: As an improtant lead-free ferroelectric/piezoelectric system, the past few decades have attracted increasing attention of bismuth layer structured-ferroelectrics (BLSF) due to its comprehensive advantages in the areas of high temperature, high frequency and ferroelectric random access memory (FRAM). In this paper, the recent progresses on the study of this system were reviewed. Firstly, as the basic of other researches, the key issues in strucutre design and microstructure study were dicussed in detail. Then special emphasis was put on ferroelectric/ piezoelectric performance and film technology. Additionally, some new research fields that were closely related to ferroelectric were introduced. In the end, the research directions were also extracted according to the authors’ knowledge.

Key words: bismuth layered structure, ferroelectric, lead-free piezoelectric, ferroelectric random access memory, review

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