[1] Cross L E. Relaxor ferroelectrics: an overview. Ferroelectrics, 1994, 151(1): 305–320.
[2] Bokov A A, Ye Z G. Recent progress in relaxor ferroelectrics with perovskite structure. J. Mater. Sci., 2006, 41(1): 31–52.
[3] Wu N N, Hou Y D, Wang C, et al. Effect of sintering temperature on dielectric relaxation and Raman scattering of 0.65Pb(Mg1/3Nb2/3)O3- 0.35PbTiO3system. J. Appl. Phys., 2009, 105(8): 084107–1–6.
[4] Algueró M, Alemany C, Jiménez B, et al. Piezoelectric PMN-PT ceramics from mechanochemically activated precursors. J. Euro. Ceram. Soc., 2004, 24(6): 937–940.
[5] Zhao L Y, Hou Y D, Chang L M, et al. Microstructure and electrical properties of 0.5PZN-0.5PZT relaxor ferroelectrics close to the morphotropic phase boundary. J. Mater. Res., 2009, 24(6): 2029–2034.
[6] Lee C, Ghosez P, Gonze X. Lattice dynamics and dielectric properties of incipient ferroelectric TiO2 rutile. Phys. Rev. B, 1994, 50(18): 13379–13387.
[7] Chen A, Zhi Y. Impurity-induced ferroelectric relaxor behavior in quantum paraelectric SrTiO3 and ferroelectric BaTiO3. Phys. Rev. B, 2002, 61(2): 957–961.
[8] Lin Y H, Ying M H, Li M, et al. Room-temperature ferromagnetic and ferroelectric behavior in polycrystalline ZnO-based thin films. Appl. Phys. Lett., 2007, 90(22): 222110–1–3.
[9] Mani R, Achary S N, Chakraborty K R, et al. FeTiTaO6: a lead-free relaxor ferroelectric based on the rutile structure. Adv. Mater., 2008, 20(7): 1348–1352.
[10] Shi Y, Hou Y D, Wang C, et al. Microstructure and relaxor behavior of dense fine-grain Fetitao6 ceramics. J. Am. Ceram. Soc., 2010, 93(9): 2491–2494.
[11] Shi Y, Hou Y D, Ge H Y, et al. Comparative studies of ferroelectric behavior in rutile type FeTiTaO6 and AlTiTaO6. Mater. Res. Bull., 2012, 47(2): 184–187.
[12] Uchino K, Nomura S. Critical exponents of dielectric constants in diffused-phase-transition crystals. Ferroelectr. Lett. Sect., 1982, 44(1): 56–61.
[13] Catalan G, Scott J F. Physics and applications of bismuth ferrite. Adv. Mater., 2009, 21(24): 2463–2485.
[14] Bridges C A, Allix M, Suchomel M R, et al. A pure bismuth a site polar perovskite synthesized at ambient pressure. Angew. Chem. Int. Ed., 2007, 46(46): 8785–8789.
[15] Zhao L Y, Hou Y D, Wang C, et al. The enhancement of relaxation of 0.5PZN-0.5PZT annealed in different atmospheres. Mater. Res. Bull., 2009, 44(8): 1652–1655.
[16] Deng G C, Li G R, Ding A L, et al. Evidence for oxygen vacancy inducing spontaneous normal-relaxor transition in complex perovskite ferroelectrics. Appl. Phys. Lett., 2005, 87(19): 192905–1–3.
[17] Jiang B, Zuo J M, Jiang N, et al. Charge density and chemical bonding in rutile, TiO2. Acta. Cryst. A, 2003. 59(Pt 4): 341–350.
[18] Montanari B, Harrison N M. Pressure-induced instabilities in bulk TiO2 rutile. J. Phys: Condensed. Matter., 2004, 16(3): 273–292.
[19] Fehr K T, Hochleitner R, Schmidbauer E. Electrical properties of rutile-type FeTiMO6 (M = Ta, Nb). J. Electroceram., 2012, 29(4): 240–249. |