溶胶-凝胶法制备NiO掺杂CaCu3Ti4O12薄膜

doi:10.3724/SP.J.1077.2013.13113

无机材料学报 ›› 2013, Vol. 28 ›› Issue (11): 1270-1274.DOI: 10.3724/SP.J.1077.2013.13113

• 研究快报 • 上一篇

溶胶-凝胶法制备NiO掺杂CaCu₃Ti₄O₁₂薄膜

徐东^1,2, 宋琪¹, 张柯¹, 徐红星¹, 杨永涛¹, 于仁红³

(1. 江苏大学材料科学与工程学院, 镇江 212013; 2. 电子科技大学电子薄膜与集成器件国家重点实验室，成都610054; 3. 常州明尔瑞陶瓷有限公司, 常州213102)

收稿日期:2013-03-04 修回日期:2013-04-01 出版日期:2013-11-20 网络出版日期:2013-10-18
基金资助:
Specialized Research Fund for the Doctoral Program of Higher Education of China(20123227120021); Natural Science Foundation of Jiangsu Province(BK2012156);?universities Natural Science Research Project of Jiangsu Province (13KJB430006); Opening Project of State key Laboratory of Electronic Thin Films and Integrated Devices(KFJJ201105); Application Program for Basic Research of Changzhou(CJ20125001)

NiO-doped CaCu₃Ti₄O₁₂ Thin Film by Sol-Gel Method

XU Dong^1,2, SONG Qi¹, ZHANG Ke¹, XU Hong-Xing¹, YANG Yong-Tao¹, YU Ren-Hong³

(1. School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China; 2. State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; 3 Changzhou Ming Errui Ceramics Co., Ltd., Changzhou 213102, China)

Received:2013-03-04 Revised:2013-04-01 Published:2013-11-20 Online:2013-10-18
Supported by:
Specialized Research Fund for the Doctoral Program of Higher Education of China(20123227120021); Natural Science Foundation of Jiangsu Province(BK2012156);?universities Natural Science Research Project of Jiangsu Province (13KJB430006); Opening Project of State key Laboratory of Electronic Thin Films and Integrated Devices(KFJJ201105); Application Program for Basic Research of Changzhou(CJ20125001)

摘要/Abstract

摘要： 用溶胶-凝胶法制备纯CaCu₃Ti₄O₁₂(CCTO)薄膜以及NiO掺杂CaCu_3-xNi_xTi₄O₁₂(CCNTO)薄膜(x=0.10、0.20、0.30)，研究了掺杂NiO对CCTO介电性能以及微观结构的影响。通过AFM图片可以看出，掺杂NiO的CCTO薄膜的晶粒尺寸比不掺杂NiO的CCTO薄膜的晶粒尺寸小。当x=0.2时，CCNTO薄膜的漏电流最小，最小值为0.546 mA，同时具有最大阈值电压与最大非线性系数，最大值分别为81 V/mm 和1.9。当Ni掺杂量达到一定程度时，CCNTO薄膜的介电常数就会增加，总体来说，随着Ni的掺杂量增加，CCNTO薄膜的介电损耗呈上升趋势。

关键词: 钛酸铜钙, 溶胶-凝胶法, 电性能, 显微组织

Abstract: Pure CaCu₃Ti₄O₁₂ (CCTO) thin film and NiO-doped CaCu_3-xNi_xTi₄O₁₂ (CCNTO) thin film with x=0.10, 0.20 and 0.30 were prepared by Sol-Gel method. The effects of NiO on the dielectric properties and microstructure revolution of CCTO were studied. The crystalline structure and the surface morphology of the films were markedly influenced by NiO content. AFM images of the CaCu_3-xNi_xTi₄O₁₂ samples showed that the grain size of Ni-doped CCTO was smaller than the grain size of CCTO without Ni doping. For the CCNTO thin film(x=0.2), the lowest leakage current was obtained and the minimum value reached 0.564 mA. Meanwhile, the highest threshold voltage and nonlinear coefficient were 81 V/mm and 1.9, respectively. The dielectric constant increased when the doping content of Ni reached a certain level. Besides, the dielectric loss was decreased firstly, and then increased.

Key words: CaCu₃Ti₄O₁₂, Sol-Gel, electrical properties, microstructure

中图分类号:

TQ174

徐东, 宋琪, 张柯, 徐红星, 杨永涛, 于仁红. 溶胶-凝胶法制备NiO掺杂CaCu₃Ti₄O₁₂薄膜[J]. 无机材料学报, 2013, 28(11): 1270-1274.

XU Dong,SONG Qi, ZHANG Ke, XU Hong-Xing, YANG Yong-Tao, YU Ren-Hong. NiO-doped CaCu₃Ti₄O₁₂ Thin Film by Sol-Gel Method[J]. Journal of Inorganic Materials, 2013, 28(11): 1270-1274.

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溶胶-凝胶法制备NiO掺杂CaCu₃Ti₄O₁₂薄膜

NiO-doped CaCu₃Ti₄O₁₂ Thin Film by Sol-Gel Method

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