AZO薄膜用于GaN基LED透明电极的性能研究

doi:10.3724/SP.J.1077.2013.12482

无机材料学报 ›› 2013, Vol. 28 ›› Issue (06): 649-652.DOI: 10.3724/SP.J.1077.2013.12482

AZO薄膜用于GaN基LED透明电极的性能研究

陈丹¹, 吕建国¹, 黄靖云¹, 金豫浙², 张昊翔², 叶志镇¹

(1. 浙江大学材料科学与工程学系, 硅材料国家重点实验室, 杭州 310027; 2. 杭州士兰明芯科技有限公司, 杭州 310018)

收稿日期:2012-08-05 修回日期:2012-09-12 出版日期:2013-06-20 网络出版日期:2013-05-20
作者简介:陈丹(1988–), 女, 硕士研究生. E-mail: wjfjs2cd@163.com
基金资助:
国家自然科学基金(51172204, 51002131); 浙江省科技厅项目(2010R50020)

Performances of GaN-based LEDs with AZO Films as Transparent Electrodes

CHEN Dan¹, LÜ Jian-Guo¹, HUANG Jing-Yun¹, JIN Yu-Zhe², ZHANG Hao-Xiang², YE Zhi-Zhen¹

(1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; 2. Hangzhou Silan Azure Co., Ltd., Hangzhou 310018, China)

Received:2012-08-05 Revised:2012-09-12 Published:2013-06-20 Online:2013-05-20
About author:CHEN Dan. E-mail: wjfjs2cd@163.com
Supported by:
National Natural Science Foundation of China (51172204, 51002131); Research Funds of Education Department of Zhejiang Province (2010R50020)

摘要/Abstract

摘要： 采用脉冲激光沉积法制备了Al掺杂ZnO(AZO)薄膜, 研究了不同沉积氧压下薄膜的光电性能。当沉积压强为0.1 Pa时, AZO薄膜光电性能最优。将该薄膜用于GaN基LED透明电极作为电流扩展层, 在20 mA正向电流下观察到了520 nm处很强的芯片发光峰, 但芯片工作电压较高, 约为10 V, 芯片亮度随正向电流的增大而增强。二次离子质谱测试表明, AZO薄膜与GaN层界面处两种材料导电性能的变化以及钝化层的形成是导致芯片工作电压偏高的原因。

关键词: AZO薄膜, GaN基LED, 透明电极, 脉冲激光沉积

Abstract: Al-doped ZnO (AZO) thin films were prepared by pulsed laser deposition under different oxygen pressures. AZO films with highly transparent conductive properties were obtained at 0.1 Pa. AZO films were used on GaN-based light-emitting diodes (LEDs) as transparent contact layers. At a forward current of 20 mA, the 520 nm electroluminescence peak was evidently observed, with a high working voltage of 10 V. The brightness of the chip was enhanced as the forward current increased. Secondary ion mass spectra revealed that the high working voltage of the LED might be triggered by the change of material conductivity and the passivation layer formed at the AZO/GaN interface.

Key words: AZO thin films, GaN-based LEDs, transparent electrodes, pulsed laser deposition

中图分类号:

O482
TN301

陈丹, 吕建国, 黄靖云, 金豫浙, 张昊翔, 叶志镇. AZO薄膜用于GaN基LED透明电极的性能研究[J]. 无机材料学报, 2013, 28(06): 649-652.

CHEN Dan, Lü Jian-Guo, HUANG Jing-Yun, JIN Yu-Zhe, ZHANG Hao-Xiang, YE Zhi-Zhen. Performances of GaN-based LEDs with AZO Films as Transparent Electrodes[J]. Journal of Inorganic Materials, 2013, 28(06): 649-652.

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AZO薄膜用于GaN基LED透明电极的性能研究

Performances of GaN-based LEDs with AZO Films as Transparent Electrodes

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