无机材料学报 ›› 2012, Vol. 27 ›› Issue (11): 1205-1210.DOI: 10.3724/SP.J.1077.2012.12015

• 研究论文 • 上一篇    下一篇

高压PLD法生长ZnO和Zn1-xMgxO纳米棒及其荧光性能

张 鹏1, 王培吉1, 曹丙强1,2   

  1. (济南大学1. 物理科学与技术学院; 2. 材料科学与工程学院, 济南 250022)
  • 收稿日期:2012-01-05 修回日期:2012-03-02 出版日期:2012-11-20 网络出版日期:2012-10-25
  • 作者简介:张 鹏(1988–), 男, 硕士研究生. E-mail: ujnzp@163.com
  • 基金资助:

    国家自然科学基金(51002065; 11174112); 山东省泰山学者基金(TSHW20091007); 教育部新世纪优秀人才支持计划

Growth and Photoluminescence of ZnO and Zn1-xMgxO Nanorods by High-pressure Pusled Laser Deposition

ZHANG Peng1, WANG Pei-Ji1, CAO Bing-Qiang1,2   

  1. (1. School of Physics and Technology, University of Jinan, Jinan 250022, China; 2. School of Material Science and Engineering, University of Jinan, Jinan 200050, China)
  • Received:2012-01-05 Revised:2012-03-02 Published:2012-11-20 Online:2012-10-25
  • About author:ZHANG Peng. E-mail: ujnzp@163.com
  • Supported by:

    National Natural Science Foundation of China (51002065; 11174112); Taishan Scholar Foundation of Shandong (TSHW20091007); Program for New Century Excellent Talents in University, MOE of China

摘要: 利用自主设计、组装的高压脉冲激光沉积(PLD)系统, 研究了温度、靶材、催化剂厚度等生长参数对ZnO和Zn1-xMgxO纳米棒生长的影响, 并对ZnO纳米棒的生长机理和Zn1-xMgxO纳米棒的光致发光性能进行了探讨. 实验发现, 当金膜催化剂厚度为2 nm、温度为925℃时, 在单晶Si衬底上生长了直径均匀的ZnO纳米棒阵列, 且具有明显的(002)择优生长取向. 实验发现温度与催化剂厚度是影响ZnO纳米棒的直径和生长密度的重要因素. 据此提出了ZnO纳米棒阵列的高压PLD生长过程应为气–液–固和气–固相结合的生长机制. 通过在ZnO靶材中掺入氧化镁, 获得了Zn1-xMgxO纳米线和纳米带结构, 但生长无明显的择优取向. 光致发光谱测量表明, 镁掺杂明显增大了ZnO的带隙, 但也在其禁带中引入了缺陷能级, 导致可见发光明显增强.

关键词: 高压PLD, 氧化锌镁, 生长机制, 光致发光

Abstract: The influence of the experimental parameters such as temperature, target, and thickness of catalyst layer on the growth of nanorods were systemically studied by a newly designed and home-built high-pressure pulsed laser deposition Zn1-xMgxO (PLD). The growth mechanism and photoluminescence properties of ZnO and Zn1-xMgxO nanorods were also investigated. It was found that c-orientated ZnO nanorod arrays grown on silicon substrate were obtained when the growth temperature was 925℃ and the thickness of gold catalyst layer was 2 nm. It was also proved that growth temperature and catalyst layer thickness were both crucial for the diameter and growth density of ZnO nanorods. A combination of vapor-liquid-solid (VLS) and vapor-solid (VS) mechanism was proposed to describe the growth of ZnO nanorods by high-pressure PLD. Zn1-xMgxO nanorods and nanobelts with random orientation were grown by doping the ZnO target with MgO. The bandgap of ZnO was effectively expanded together with defect-related levels formation in the forbidden gap, which also induced enhancement of visible peak emission.

Key words: high pressure PLD, Zn1-xMgxO, growth mechanism, photoluminescence

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