采用水基原子层沉积工艺在石墨烯上沉积Al2O3介质薄膜研究

doi:10.3724/SP.J.1077.2012.11663

无机材料学报 ›› 2012, Vol. 27 ›› Issue (9): 956-960.DOI: 10.3724/SP.J.1077.2012.11663

采用水基原子层沉积工艺在石墨烯上沉积Al₂O₃介质薄膜研究

张有为^{1, 2}, 万里¹, 程新红², 王中健², 夏超², 曹铎², 贾婷婷², 俞跃辉²

(1. 温州大学物理与电子信息工程学院, 温州325035; 2. 中国科学院上海微系统与信息技术研究所, 信息功能材料国家重点实验室, 上海200050)

收稿日期:2011-10-25 修回日期:2011-11-30 出版日期:2012-09-20 网络出版日期:2012-08-28
作者简介:张有为(1987-), 男, 硕士研究生. E-mail: ywzhang@mail.sim.ac.cn
基金资助:
国家自然科学基金(60807002, 11175229)

Studies on H₂O-based Atomic Layer Deposition of Al₂O₃ Dielectric on Pristine Graphene

ZHANG You-Wei^{1, 2}, WAN Li¹, CHENG Xin-Hong², WANG Zhong-Jian², XIA Chao², CAO Duo², JIA Ting-Ting², YU Yue-Hui²

(1. Department of Physics, Wenzhou University, Wenzhou 325035, China; 2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem & Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

Received:2011-10-25 Revised:2011-11-30 Published:2012-09-20 Online:2012-08-28
About author:ZHANG You-Wei. E-mail: ywzhang@mail.sim.ac.cn
Supported by:
National Natural Science of China (60807002, 11175229)

摘要/Abstract

摘要： 采用水基原子层沉积(H₂O-based ALD)方法在石墨烯上直接生长Al₂O₃介质薄膜, 研究了Al₂O₃成核机理. 原子力显微镜(AFM)对Al₂O₃薄膜微观形态分析表明, 沉积温度决定着Al₂O₃在石墨烯表面的成核生长情况, 物理吸附在石墨烯表面的水分子是Al₂O₃成核的关键, 物理吸附水分子的均匀性直接影响Al₂O₃薄膜的均匀性. 在适当的温度窗口(100~130℃), Al₂O₃可以均匀沉积在石墨烯上, AFM测得Al₂O₃薄膜表面均方根粗糙度(RMS)为0.26 nm, X射线光电子能谱(XPS)表面分析与元素深度剖析表明, 120℃下在石墨烯表面沉积的Al₂O₃薄膜中O和Al元素的含量比约为1.5. 拉曼光谱分析表明, 采用H₂O-based ALD工艺沉积栅介质薄膜不会降低石墨烯晶体质量.

关键词: 石墨烯, 原子层沉积, Al₂O₃薄膜

Abstract: Al₂O₃ films were deposited directly onto the surface of graphene by H₂O-based atomic layer deposition (ALD) method, where physically absorbed water molecules acted as oxidant and the growing temperature changed from 60℃ to 260℃. The morphology of Al2O3 films was characterized by atomic force microscope (AFM). AFM images revealed that the distribution of physically adsorbed H₂O molecules on the surface of graphene decided the morphology of Al₂O₃ film, and conformal and uniform Al₂O₃ film was achieved with the root mean square (RMS) roughness of 0.26 nm when the growing temperature was around 100-130℃. X-ray photoelectron spectroscopy (XPS) analysis showed that the O/Al ratio was close to stoichiometric condition of 1.5. Raman spectroscopy analysis revealed that H₂O-based ALD process did not destroy the structure of graphene. The growing temperature in the H₂O-based ALD process had significant impact on the initial nucleation and the growth of Al₂O₃ films.

Key words: graphene, atomic layer deposition, Al₂O₃ dielectrics

中图分类号:

O484

张有为, 万里, 程新红, 王中健, 夏超, 曹铎, 贾婷婷, 俞跃辉. 采用水基原子层沉积工艺在石墨烯上沉积Al₂O₃介质薄膜研究[J]. 无机材料学报, 2012, 27(9): 956-960.

ZHANG You-Wei, WAN Li, CHENG Xin-Hong, WANG Zhong-Jian, XIA Chao, CAO Duo, JIA Ting-Ting, YU Yue-Hui. Studies on H₂O-based Atomic Layer Deposition of Al₂O₃ Dielectric on Pristine Graphene[J]. Journal of Inorganic Materials, 2012, 27(9): 956-960.

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采用水基原子层沉积工艺在石墨烯上沉积Al₂O₃介质薄膜研究

Studies on H₂O-based Atomic Layer Deposition of Al₂O₃ Dielectric on Pristine Graphene

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