Ho掺杂对Bi4-xHoxTi3O12陶瓷结构与铁电性能的影响

doi:10.3724/SP.J.1077.2012.11466

无机材料学报 ›› 2012, Vol. 27 ›› Issue (7): 721-725.DOI: 10.3724/SP.J.1077.2012.11466

Ho掺杂对Bi_4-xHo_xTi₃O₁₂陶瓷结构与铁电性能的影响

王传彬, 傅力, 沈强, 张联盟

(武汉理工大学材料复合新技术国家重点实验室, 武汉 430070)

收稿日期:2011-08-08 修回日期:2011-10-17 出版日期:2012-07-20 网络出版日期:2012-06-06
基金资助:
科技部国际科技合作项目(2009DFB50470); 湖北省自然科学基金(2009CDB041); 中央高校基本科研业务费专项基金(2010-la-010)

Effect of Ho Doping on Structure and Ferroelectric Property of Bi_4-xHo_xTi₃O₁₂ Ceramics

WANG Chuan-Bin, FU Li, SHEN Qiang, ZHANG Lian-Meng

(State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China)

Received:2011-08-08 Revised:2011-10-17 Published:2012-07-20 Online:2012-06-06
Supported by:
International Science and Technology Cooperation Project (2009DFB50470); Natural Science Foundation of Hubei Province (2009CDB041); Research Funds for Central Universities (2010-la-010)

摘要/Abstract

摘要： 以Ho为掺杂元素, 采用热压烧结方法制备Bi_4-xHo_xTi₃O₁₂陶瓷, 重点研究了Ho掺杂量对其物相组成、致密度、微观结构和铁电性能的影响. 首先以Bi₂O₃、TiO₂和Ho₂O₃微粉为原料, 利用固相反应在900℃合成出主晶相为Bi₄Ti₃O₁₂的Bi_4-xHo_xTi₃O₁₂(x=0~0.8)粉体; 然后, 将合成粉体在850℃、30 MPa条件下热压烧结, 当Ho掺杂量x=0~0.4得到了物相单一、整体致密(>99%)的Bi_4-xHo_xTi₃O₁₂陶瓷. 随Ho掺杂量的增加, Bi_4-xHo_xTi₃O₁₂陶瓷的剩余极化强度呈现先增大后减小的趋势, 主要与氧空位浓度和不同掺杂浓度引起的掺杂位置的不同有关. 在Ho掺杂量x=0.4时, 其剩余极化强度最大(2P_r=13.92 μC/cm²), 远大于未掺杂的Bi₄Ti₃O₁₂陶瓷, 说明适量Ho掺杂能有效改善其铁电性能.

关键词: Bi₄Ti₃O₁₂铁电陶瓷, Ho掺杂, 固相反应, 热压烧结, 铁电性能

Abstract: Ho-doped bismuth titanate (Bi_4-xHo_xTi₃O₁₂) ceramics were prepared by hot-press sintering. The effects of Ho doping on the crystalline phase, density, microstructure and ferroelectric property of the ceramics were investigated. At first, Bi_4-xHo_xTi₃O₁₂(x=0-0.8) powders in the main phase of Bi₄Ti₃O₁₂ were synthesized from Bi₂O₃, TiO₂ and Ho₂O₃ micro-powders by solid-state reaction at 900℃. The as-synthesized powders were then sintered by hot-press at 850℃ and 30 MPa to prepare Bi_4-xHo_xTi₃O₁₂ ceramics. With the appropriate Ho doping content of x=0-0.4, single-phased and dense (relative density >99%) Bi_4-xHo_xTi₃O₁₂ ceramics were obtained. The remanent polarization (P_r) of the ceramics increased with Ho doping increasing but decreased at x>0.4, mainly due to the oxygen vacancy concentration and different doping sites. The Bi_4-xHo_xTi₃O₁₂ ceramics have the highest value of 2P_r=13.92 μC/cm² at x=0.4, which is higher that that of the undoped Bi₄Ti₃O₁₂ ceramics. The result indicates that appropriate Ho doping can improve the ferroelectric property of Bi₄Ti₃O₁₂ ceramics.

Key words: Bi₄Ti₃O₁₂ ferroelectric ceramics, Ho doping, solid-state reaction, hot-press, ferroelectric property

中图分类号:

TG171

王传彬, 傅力, 沈强, 张联盟. Ho掺杂对Bi_4-xHo_xTi₃O₁₂陶瓷结构与铁电性能的影响[J]. 无机材料学报, 2012, 27(7): 721-725.

WANG Chuan-Bin, FU Li, SHEN Qiang, ZHANG Lian-Meng. Effect of Ho Doping on Structure and Ferroelectric Property of Bi_4-xHo_xTi₃O₁₂ Ceramics[J]. Journal of Inorganic Materials, 2012, 27(7): 721-725.

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Ho掺杂对Bi_4-xHo_xTi₃O₁₂陶瓷结构与铁电性能的影响

Effect of Ho Doping on Structure and Ferroelectric Property of Bi_4-xHo_xTi₃O₁₂ Ceramics

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