ZnO纳米阵列增强大功率蓝光LED出光效率的研究

doi:10.3724/SP.J.1077.2012.11499

无机材料学报 ›› 2012, Vol. 27 ›› Issue (7): 716-720.DOI: 10.3724/SP.J.1077.2012.11499

ZnO纳米阵列增强大功率蓝光LED出光效率的研究

徐冰¹, 赵俊亮¹, 张检明¹, 孙小卫¹, 诸葛福伟², 李效民²

(1. 天津大学理学院, 应用物理系, 天津市低维功能材料物理与制备技术重点实验室, 天津 300072; 2. 中国科学院上海硅酸盐研究所, 高性能陶瓷和超微结构国家重点实验室, 上海 200050)

收稿日期:2011-08-11 修回日期:2011-10-11 出版日期:2012-07-20 网络出版日期:2012-06-06
作者简介:徐冰(1988-), 男, 硕士研究生. E-mail: bingxu@tju.edu.cn
基金资助:
中国科学院高性能陶瓷和超微结构国家重点实验室开放基金(SKL201012SIC); 国家自然科学基金(61006037, 61076015)

ZnO Nano-arrays on High Power Blue LED Chip for Enhanced Light Extraction Efficiency

XU Bing¹, ZHAO Jun-Liang¹, ZHANG Jian-Ming¹, SUN Xiao-Wei¹, ZHUGE Fu-Wei², LI Xiao-Min²

(1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Applied Physics, School of Science, Tianjin University, Tianjin 300072, China; 2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai 200050, China)

Received:2011-08-11 Revised:2011-10-11 Published:2012-07-20 Online:2012-06-06
About author:XU Bing. E-mail: bingxu@tju.edu.cn
Supported by:
The State Key Laboratory of Chinese Academy of Science High Performance Ceramics and Superfine Microstructures Program (SKL201012SIC); National Natural Science Foundation of China(61006037, 61076015)

摘要/Abstract

摘要： 采用低成本的化学溶液法在大功率GaN基蓝光LED芯片上生长ZnO纳米阵列, 以提高LED芯片的出光效率. 通过改变生长溶液中氨水及锌离子浓度实现对纳米阵列结构形貌的可控性, 进而得到不同形貌的ZnO纳米阵列. 在此基础上, 进一步研究纳米结构形貌对LED芯片出光性能的影响, 探讨纳米结构增强LED芯片发光效率的机理. 结果表明, 较高密度、锥形形貌的ZnO纳米阵列更有利于增强LED芯片的出光效率. 在优化的实验条件下, 表面沉积ZnO纳米阵列的LED芯片比普通LED的出光效率高出60%以上, 并且纳米阵列不影响LED器件的电学性能和发光稳定性.

关键词: ZnO纳米阵列, 大功率LED芯片, 出光效率, 化学溶液法

Abstract: ZnO nano-arrays were grown on high power GaN blue LED chip by low-cost chemical solution methods, which aimed to enhance the light extraction efficiency of LED chip. Various morphology was achieved by adjusting the concentration of ammonia and Zn²⁺ in the growth solution. With different growth solution, ZnO nano-arrays exhibited different morphologies and densities. The effect of nano-array morphology on the light extraction performance of the ZnO nano-array coated LED chip were studied. The mechanism of light extraction efficiency enhancement by nano-arrays was also discussed based on the experimental results. The result shows that ZnO nano-arrays with higher density and cone-shaped morphology are favorable for the improvement of light extraction in LED chip. ZnO nano-arrays grown at the optimum conditions can enhance the light extraction of LED chip by more than 60%. Meanwhile, ZnO nano-arrays have no significant effect on the electrical properties and electroluminescence stability of LED chip.

Key words: ZnO nano-arrays, high power LED chip, light extraction efficiency, chemical solution method

中图分类号:

O472

徐冰, 赵俊亮, 张检明, 孙小卫, 诸葛福伟, 李效民. ZnO纳米阵列增强大功率蓝光LED出光效率的研究[J]. 无机材料学报, 2012, 27(7): 716-720.

XU Bing, ZHAO Jun-Liang, ZHANG Jian-Ming, SUN Xiao-Wei, ZHUGE Fu-Wei, LI Xiao-Min. ZnO Nano-arrays on High Power Blue LED Chip for Enhanced Light Extraction Efficiency[J]. Journal of Inorganic Materials, 2012, 27(7): 716-720.

参考文献

[1] 胡耀祖, 李丽玲, 李宏俊, 等. 照明节能技术发展趋势. 照明工程学报. 2008, 19(2): 1-6.

[2] Phillips J M, Coltrin M E, Crawford M H, et al. Research challenges to ultra-efficient inorganic solid-state lighting. Laser & Photon Rev., 2007, 1(4): 307-333.

[3] Nishida T, Saito H, Kobayashi N, et al. Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region. Appl. Phys. Lett., 2001, 78(25): 3927-3928.

[4] Fujii T, Gao Y, Sharma R, et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Appl. Phys. Lett., 2004, 84(6): 855-857.

[5] McGroddy K, David A, Matioli E, et al. Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes. Appl. Phys. Lett., 2008, 93(10): 103502-1-3.

[6] Kwon M K, Kim J Y, Park I K, et al. Enhanced emission efficiency of GaN/InGaN multiple quantum well light-emitting diode with an embedded photonic crystal. Appl. Phys. Lett., 2008, 92(25): 251110-1-3.

[7] Zhong J, Chen H, Saraf G, et al. Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency. Appl. Phys. Lett., 2007, 90(20): 203515-1-3.

[8] Chiu C H, Lee C E, Chao C L, et al. Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs. Electrochemical and Solid-State Letters. 2008, 11(4): 84-87.

[9] An Sung Jin, Chae JeeHae, Yi Gyu-Chul, et al. Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays. Appl. Phys. Lett., 2008, 92(12): 121108-1-3.

[10] Qiu Jijun, Li Xiaomin, Zhuge Fuwei, et al. Solution-derived 40 -m vertically aligned ZnO nanowire arrays as photoelectrodes in dye-sensitized solar cells. Nanotechnology. 2010, 21(19): 1-9.

[11] Kim Kyoung-Kook, Lee Sam-dong, Kim Hyunsoo, et al. Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution. Appl. Phys. Lett., 2009, 94(7): 071118-1-3.

[12] Kuo C H, Chen C M, Kuo C W, et al. Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers. Appl. Phys. Lett., 2006, 89(20): 201104-1-3.

[13] Ye Jing, Zhao Yu, Tang Libin, et al. Ultraviolet electroluminescence from two-dimensional ZnO nanomesh/GaN heterojunction light emitting diodes. Appl. Phys. Lett., 2011, 98(26): 263101-1-3.

ZnO纳米阵列增强大功率蓝光LED出光效率的研究

ZnO Nano-arrays on High Power Blue LED Chip for Enhanced Light Extraction Efficiency

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