化学气相沉积法制备的块体Si-C-N陶瓷的热行为

doi:10.3724/SP.J.1077.2011.10828

无机材料学报 ›› 2011, Vol. 26 ›› Issue (7): 779-784.DOI: 10.3724/SP.J.1077.2011.10828

• 研究快报 • 上一篇

化学气相沉积法制备的块体Si-C-N陶瓷的热行为

卢国锋^{1, 2}, 乔生儒¹, 张程煜¹, 焦更生²

(1. 西北工业大学热结构复合材料国家重点实验室, 西安 710072; 2. 渭南师范学院化学化工系, 渭南 714000)

收稿日期:2010-11-30 修回日期:2011-03-07 出版日期:2011-07-20 网络出版日期:2011-06-20
作者简介:LU Guo-Feng(1975-), male, PhD, lecturer. E-mail: luguof.student@sina.com
基金资助:
National Natural Science Foundation of China (50772089); Graduate Project of Weinan Normal University (10YKZ052); Scientific Culture Plan (11YKP018 and 11YKZ003)

Thermal Behaviors of Chemical Vapor Deposited Bulk Si-C-N Ceramic

LU Guo-Feng^{1, 2}, QIAO Sheng-Ru¹, ZHANG Cheng-Yu¹, JIAO Geng-Sheng²

(1. National Key Laboratory of Thermostructure Composite Materials, Northwestern Polytechnical University, Xi’an 710072, China; 2. Department of Chemistry and Chemical Engineering, Weinan Normal University, Weinan 714000, China)

Received:2010-11-30 Revised:2011-03-07 Published:2011-07-20 Online:2011-06-20
About author:LU Guo-Feng(1975-), male, PhD, lecturer. E-mail: luguof.student@sina.com
Supported by:
National Natural Science Foundation of China (50772089); Graduate Project of Weinan Normal University (10YKZ052); Scientific Culture Plan (11YKP018 and 11YKZ003)

摘要/Abstract

摘要： 采用化学气相沉积法制备了块体非晶态Si-C-N陶瓷. 用TG/DSC、XRD、SEM和TEM等技术方法研究了所制备的Si-C-N陶瓷的热行为. 研究结果表明: 在热处理过程中, 非晶态Si-C-N首先发生相分离, 分离后的一种相呈颗粒状; β-SiC就是从这种颗粒状的分离相中形成. 在热处理条件下, 非晶Si-C-N的晶化温度约为1200℃; 在加热速率为20℃/min的连续加热条件下, 其晶化温度为1372.6℃. β-SiC在1200℃首先形成, β-Si₃N₄和α-SiC则在1500℃形成. 在扫描电镜观察中, 热处理后的Si-C-N中出现一种类似于层状的组织, 这种组织的晶化程度较高.

关键词: 非晶态, Si-C-N陶瓷, 热行为, 晶化

Abstract: The amorphous bulk Si-C-N ceramic was prepared by chemical vapor deposition (CVD). The thermal behaviors of as-prepared Si-C-N ceramic were investigated using TG/DSC, XRD, SEM and TEM. The phase separation firstly occurred in amorphous Si-C-N during the heat treatment, and one of separating phases appeared granular. β-SiC was formed in the granular separating phase. The amorphous Si-C-N began to crystallize at about 1200℃ when the ceramic exposed to the heat treatment. The crystallization temperature was about 1372.6℃, which was determined by DSC under the condition of continuous heating at a heating rate of 20℃/min. β-SiC was found at 1200℃, while β-Si₃N₄and α-SiC were formed at about 1500℃. A laminate-like structure appears in the heat-treated Si-C-N. This kind of structure was proved to be the highly crystallized Si-C-N.

Key words: amorphous, Si-C-N ceramic, thermal behavior, crystallization

中图分类号:

TQ174

卢国锋, 乔生儒, 张程煜, 焦更生. 化学气相沉积法制备的块体Si-C-N陶瓷的热行为[J]. 无机材料学报, 2011, 26(7): 779-784.

LU Guo-Feng, QIAO Sheng-Ru, ZHANG Cheng-Yu, JIAO Geng-Sheng. Thermal Behaviors of Chemical Vapor Deposited Bulk Si-C-N Ceramic[J]. Journal of Inorganic Materials, 2011, 26(7): 779-784.

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化学气相沉积法制备的块体Si-C-N陶瓷的热行为

Thermal Behaviors of Chemical Vapor Deposited Bulk Si-C-N Ceramic

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