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无机材料学报

无机材料学报 ›› 2011, Vol. 26 ›› Issue (7): 765-768.DOI: 10.3724/SP.J.1077.2011.00765

• 研究论文 • 上一篇    下一篇

提高YBCO薄膜高场性能的研究

叶 帅, 索红莉, 吴紫平, 刘 敏, 徐 燕, 马 麟   

  1. (北京工业大学 材料科学与工程学院, 国家教育部功能材料重点实验室, 北京100124)
  • 收稿日期:2010-09-27 修回日期:2010-12-29 出版日期:2011-07-20 网络出版日期:2011-06-20
  • 作者简介:叶 帅(1982-), 男, 博士研究生. E-mail: yes_121@emails.bjut.edu.cn
  • 基金资助:

    973计划项目(2006CB601005); 国家863项目(2009AA032401); 国家自然科学基金(50771003)

Research on Improving In-field Property of YBCO Films

YE Shuai, SUO Hong-Li, WU Zi-Ping, LIU Min, XU Yan, MA Lin   

  1. (The key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing 100124, China)
  • Received:2010-09-27 Revised:2010-12-29 Published:2011-07-20 Online:2011-06-20
  • Supported by:

    National Basic Research Program 973 of China (2006CB601005); National High Technology Research and Development Program 863 of China (2009AA032401); National Natural Science Foundation of China (50771003)

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被引次数

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摘要： 采用低氟的金属有机盐沉积技术(MOD)在LAO单晶上制备了Gd和Zr掺杂的YBCO薄膜, 并分析了不同掺杂对YBCO薄膜在外加磁场下的Jc的影响. 研究发现, 采用Gd部分取代YBCO薄膜中的Y元素, 可以有效地提高YBCO薄膜高场下的Jc值, 但对于低场下的Jc值影响不大; 而采用过量Gd掺杂YBCO薄膜, 可以有效地提高YBCO薄膜在低场下的Jc值, 但对于高场下的Jc值影响不大. 而Zr掺杂可以有效地提高YBCO薄膜在低场和高场下的Jc值. 最后, 结合Gd取代和Zr掺杂两种方式, 有效地提高了YBCO薄膜的场性能, 其最大钉扎力(Fp(Max))达到了16GN/m3, 比纯的YBCO薄膜(4.0 GN/m3)提高了约3倍; 在磁场为3T和7T下, 其Jc值分别为1.31MA/cm2和87.7kA/cm2. 

关键词: MOD, Gd取代, Zr掺杂, YBCO薄膜

Abstract: YBCO films doped with Zr or substituted by Gd element were prepared by fluorine-reduced metal organic deposition (MOD) on LAO single crystal. The influences of different dopants on in-field critical current density (Jc) of YBCO films were investigated. It is found that the Jc values of YBCO films in high field were enhanced drastically through substituting Y site by Gd element partially, while the Jc values of YBCO films in low field are not enhanced. The Jc values of YBCO films in low field are improved significantly by adding extra Gd element into YBCO film because of the formation of rare earth oxide particles in YBCO film. But in high field, it has slight effect on Jc values. It is an effective method to improve the property of YBCO film by adding Zr-contained compounds into YBCO film to form BZO nano particles, which can enhance Jc values of YBCO film in low field and in high field. Finally, the high performance Y0.5Gd0.5BCO film incorporated with BZO nano particles was prepared. The max pinning force (Fp(max)) is up to 16GN/cm3, as higher as 4 times of that of pure YBCO film. Jc values of Y0.5Gd0.5BCO+Zr film at 65K reach 1.31MA/cm2(3T) and 87.7kA/cm2(7T).

Key words: MOD, Gd substitution, Zr dopping, YBCO film

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