气溶胶辅助化学气相沉积制备Al掺杂ZnO透明导电薄膜

doi:10.3724/SP.J.1077.2011.00607

无机材料学报 ›› 2011, Vol. 26 ›› Issue (6): 607-612.DOI: 10.3724/SP.J.1077.2011.00607

气溶胶辅助化学气相沉积制备Al掺杂ZnO透明导电薄膜

秦秀娟^1,2, 韩司慧智¹, 赵琳¹, 左华通¹, 宋士涛³

(1. 燕山大学环境与化学工程学院, 秦皇岛 066004; 2. 亚稳材料制备技术与科学国家重点实验室, 秦皇岛 066004; 3. 河北科技师范学院理学院, 秦皇岛 066004)

收稿日期:2010-08-19 修回日期:2010-10-03 出版日期:2011-06-20 网络出版日期:2011-06-07
作者简介:秦秀娟(1964-), 女, 博士, 教授. E-mail: qinxj@ysu.edu.cn
基金资助:
河北省自然科学基金(B2008000758)

Fabrication of Transparent Conductive Al-doped ZnO Thin Films by Aerosol-assisted Chemical Vapour Deposition

QIN Xiu-Juan^1,2, HAN Si-Hui-Zhi¹, ZHAO Lin¹, ZUO Hua-Tong¹, SONG Shi-Tao³

(1. College of Environmental and Chemical Engineering, Yanshan University, Qinhuangdao 066004, China; 2. State Key Laboratory of Metastable Materials Science and Technology, Qinhuangdao 066004, China; 3. College of Physics and Chemistry, Hebei Normal University of Science and Technology, Qinhuangdao 066004, China)

Received:2010-08-19 Revised:2010-10-03 Published:2011-06-20 Online:2011-06-07
Supported by:
Natural Science Foundation of Hebei Province (B200800758)

摘要/Abstract

摘要： 采用气溶胶辅助化学气相沉积(AACVD)法在玻璃衬底上制备了Al掺杂ZnO(AZO)薄膜. 研究了Al掺杂(2at%~8at%)对ZnO薄膜结构及光电性能的影响. 利用XRD、SEM、EDAX、紫外可见分光光度计等手段对样品进行测试. 结果表明, 制备的所有AZO薄膜均具有纤锌矿结构, 不具有沿c轴方向的择优取向, XRD图谱中未观察出Al的相关分相. 在可见光范围内, AZO薄膜的平均透过率大于72%, 光学禁带宽度随Al掺杂量的增加而变窄. 同时根据四探针技术所得的数据得知: Al的掺杂导致薄膜方块电阻的变化, 随着Al掺杂量的增加, 方块电阻有明显变小的现象, 掺杂6at%Al的AZO薄膜具有最低方块电阻(18Ω/□).

关键词: 气溶胶, 化学气相沉积法, Al:ZnO, 透明导电薄膜

Abstract: Al-doped ZnO thin films were prepared by aerosol-assisted chemical vapour deposition (AACVD) on glass substrates. The effect of Al content (2at%-8at%) on the structural, optical and electrical properties of Al-doped ZnO thin films was investigated in detail. The samples were tested by XRD, SEM, EDAX and UV-Vis spectrophotometer. The results indicate that the AZO films have a hexagonal (wurtzite) structure without preferential orientation along c-axis, and however no Al related phases are observed. The average transmittances of the AZO film is over 72% in the visible regions. The optical band gap for the AZO films becomes narrow with the increasing Al dopant. The four-point probe technique is used to characterize thin films electrically. The data shows that Al dopant decrease the sheet resistance. The ZnO films doped with 6at% Al exhibit a minimum of sheet resistance (18Ω/□).

Key words: aerosol, chemical vapour deposition, Al-doped ZnO, transparent conductive thin films

中图分类号:

O484

秦秀娟, 韩司慧智, 赵琳, 左华通, 宋士涛. 气溶胶辅助化学气相沉积制备Al掺杂ZnO透明导电薄膜[J]. 无机材料学报, 2011, 26(6): 607-612.

QIN Xiu-Juan, HAN Si-Hui-Zhi, ZHAO Lin, ZUO Hua-Tong, SONG Shi-Tao. Fabrication of Transparent Conductive Al-doped ZnO Thin Films by Aerosol-assisted Chemical Vapour Deposition[J]. Journal of Inorganic Materials, 2011, 26(6): 607-612.

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气溶胶辅助化学气相沉积制备Al掺杂ZnO透明导电薄膜

Fabrication of Transparent Conductive Al-doped ZnO Thin Films by Aerosol-assisted Chemical Vapour Deposition

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