ZnO/Zn2SnO4纳米电缆结构表征与发光特性

doi:10.3724/SP.J.1077.2011.00597

无机材料学报 ›› 2011, Vol. 26 ›› Issue (6): 597-601.DOI: 10.3724/SP.J.1077.2011.00597

ZnO/Zn₂SnO₄纳米电缆结构表征与发光特性

周茹莉, 孔向阳

(上海交通大学材料科学与工程学院, 汽车动力电池材料研究所, 上海 200240)

收稿日期:2010-12-08 修回日期:2011-01-12 出版日期:2011-06-20 网络出版日期:2011-06-07
作者简介:周茹莉(1983-), 女, 硕士研究生. E-mail: mariannazhou@gmail.com
基金资助:
上海市基础研究重点项目(08JC1411000); 973项目(2010CB-9333702)

Photoluminescence and Characterization of ZnO/Zn₂SnO₄Nanocables

ZHOU Ru-Li, KONG Xiang-Yang

(Center of Nanotechology for Energy Conversion and Storage, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China)

Received:2010-12-08 Revised:2011-01-12 Published:2011-06-20 Online:2011-06-07
Supported by:
Key Program for Basic Research of Shanghai (08JC1411000); “973” Project (2010CB-9333702)

摘要/Abstract

摘要： ZnO、Zn₂SnO₄均为直接带隙宽禁带氧化物半导体, 是优异的功能材料. 以ZnO、SnO₂为原料, 通过共热蒸发法, 合成了ZnO/Zn₂SnO₄纳米电缆结构. 该纳米电缆结构为以ZnO为芯, Zn₂SnO₄ 为鞘, 直径为50~100nm, 长度可达上百微米. 通过TEM分析手段, 发现该纳米电缆结构中, ZnO的生长方向为<0001>方向, ZnO芯与Zn₂SnO₄鞘之间形成晶格外延关系. 室温下光致发光谱结果显示, 该纳米电缆结构在紫外区域(380.58nm附近处)存在很强的带边发光, 而在可见光区域没有明显的发光带, 这一结果表明: Zn₂SnO₄鞘层的存在能有效抑制ZnO表面的缺陷发光. ZnO/Zn₂SnO₄纳米电缆结构可以抑制电子?空穴的复合, 在染料敏化太阳能电池等方面有一定的应用潜力.

关键词: ZnO/Zn₂SnO₄, 纳米电缆, 合成, 发光特性

Abstract: ZnO and Zn₂SnO₄ are excellent functional semiconducting materials with wide direct band gap, high electron mobility and photocatalytic activity. High-density single-crystalline ZnO/Zn₂SnO₄ nanocables were successfully synthesized by using a simple thermal co-evaporation from a mixture source of ZnO and SnO₂ powders. The products in general contain various geometries of wires, with an average diameter of 50-100 nm. These nanowires are consisted of ZnO core and Zn₂SnO₄ sheath with ultra-length, up to several hundred microns. The images of transmission electron microscope (TEM) show that the ZnO core of the nanocable grows along the direction of <0001>. The interface between ZnO and Zn₂SnO₄ performs lattice coherent. The photoluminescence (PL) spectra recorded from the nanocables at room temperature show only a strong peak corresponding to UV band emission of ZnO at about 380.58 nm, which indicates that the sheath of Zn₂SnO₄ prohibits the oxygen deficiency in the surface of nanocables. ZnO/Zn₂SnO₄nanocables can effectively suppress the recombination of the photogenerated electrons and holes, which is promising as anode for dye-sensitized solar cells.

Key words: ZnO/Zn₂SnO₄, nanocable, synthesis, photoluminescence spectra

中图分类号:

O649

周茹莉, 孔向阳. ZnO/Zn₂SnO₄纳米电缆结构表征与发光特性[J]. 无机材料学报, 2011, 26(6): 597-601.

ZHOU Ru-Li, KONG Xiang-Yang. Photoluminescence and Characterization of ZnO/Zn₂SnO₄Nanocables[J]. Journal of Inorganic Materials, 2011, 26(6): 597-601.

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ZnO/Zn₂SnO₄纳米电缆结构表征与发光特性

Photoluminescence and Characterization of ZnO/Zn₂SnO₄Nanocables

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