射频磁控溅射制备层状Bi-Te薄膜及热电性能研究

doi:10.3724/SP.J.1077.2011.11030

无机材料学报 ›› 2011, Vol. 26 ›› Issue (5): 555-560.DOI: 10.3724/SP.J.1077.2011.11030

• 研究快报 • 上一篇

射频磁控溅射制备层状Bi-Te薄膜及热电性能研究

张志伟, 王瑶, 邓元, 谭明

(特种功能材料与薄膜技术北京市重点实验室, 北京航空航天大学化学与环境学院, 北京 100191)

收稿日期:2011-01-10 修回日期:2011-02-07 出版日期:2011-05-20 网络出版日期:2011-06-07
作者简介:ZHANG Zhi-Wei (1984-), male, PhD. E-mail: zzw704@163.com
基金资助:
National Natural Science Foundation of China (50772005, 51002006); National Technology Research and Development Program (863, 2009AA03Z322); Beijing Science and Technology Thematic Program (Z08000303220808)

Growth and Transport Properties of Layered Bismuth Telluride Thin Films via Radio Frequency Magnetron Sputtering

ZHANG Zhi-Wei, WANG Yao, DENG Yuan, TAN Ming

(Beijing Key Laboratory for Advanced Functional Materials and Thin Film Technology, School of Chemistry and Environment, Beihang University, Beijing 100191, China)

Received:2011-01-10 Revised:2011-02-07 Published:2011-05-20 Online:2011-06-07
About author:ZHANG Zhi-Wei (1984-), male, PhD. E-mail: zzw704@163.com
Supported by:
National Natural Science Foundation of China (50772005, 51002006); National Technology Research and Development Program (863, 2009AA03Z322); Beijing Science and Technology Thematic Program (Z08000303220808)

摘要/Abstract

摘要： 采用射频磁控溅射制备了具有特殊层状纳米结构的碲化铋热电薄膜. 以Bi₂Te₃为靶材, 在不同基底温度和沉积时间下制备了薄膜, 并利用X射线衍射、扫描电镜和X射线能谱等对样品进行了结构和成分分析, 同时测试了薄膜的电导率和Seebeck系数. 结果表明, 基底温度是影响薄膜微结构和热电性能的关键因素之一, 较高的基底温度利于层状结构的形成和功率因子的提高, 400℃基底温度下制备薄膜的功率因子最优. 然而, 所有薄膜均显示不同程度偏离Bi₂Te₃的化学计量比而缺Te, 优化薄膜成分有望进一步提高薄膜的热电性能.

关键词: 碲化铋, 薄膜, 射频磁控溅射, 热电性能

Abstract: Bismuth telluride thin films with layered nanostructure have been fabricated by radio frequency (RF) magnetron sputtering. Thin films were deposited at various substrate temperatures and durations with a single Bi₂Te₃ target. The microstructures and chemical compositions of these films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive spectroscope (EDS). Electrical transport property and Seebeck coefficient were measured on these thin films. The results show that substrate temperature is a key factor on the microstructure and transport property of bismuth telluride thin films. High temperature is beneficial for the formation of layered nanostructure and the enhancement of power factor. The highest power factor was obtained on the thin film deposited at 400℃. However, Te deficiency was observed in these thin films. Thus thermoelectric property would be further enhanced by optimizing composition of these thin films.

Key words: bismuth telluride, thin film, radio frequency magnetron sputtering, thermoelectric properties

中图分类号:

TB34

张志伟, 王瑶, 邓元, 谭明. 射频磁控溅射制备层状Bi-Te薄膜及热电性能研究[J]. 无机材料学报, 2011, 26(5): 555-560.

ZHANG Zhi-Wei, WANG Yao, DENG Yuan, TAN Ming. Growth and Transport Properties of Layered Bismuth Telluride Thin Films via Radio Frequency Magnetron Sputtering[J]. Journal of Inorganic Materials, 2011, 26(5): 555-560.

参考文献

[1] Rowe D M. Handbook of Thermoelectrics. Boca Raton: CRC Press, 1995.

[2] Rowe D M. Thermoelectrics Handbook-Macro to Nano. Boca Raton: CRC Press, 2006.

[3] DiSalvo F J. Thermoelectric cooling and power generation. Science, 1999, 285(5428): 703-706.

[4] Tritt T M. Thermoelectric materials-holey and unholy semiconductors. Science, 1999, 283(5403): 804-805.

[5] Majumdar A. Thermoelectricity in semiconductor nanostructures. Science, 2004, 303(5659): 777-778.

[6] Hicks L D, Dresselhaus M S. Effect of quantum-well structures on the thermoelectric figure of merit. Phys. Rev. B, 1993, 47(19): 12727-12731.

[7] Humphrey T E, Linke H. Reversible thermoelectric nanomaterials. Phys. Rev. Lett., 2005, 94(9): 096601-1-4.

[8] Mingo N. Thermoelectric figure of merit of II-VI semiconductor nanowires. Appl. Phys. Lett., 2004, 85(24): 5986-5988.

[9] Venkatasubramanian R, Siivola E, Colpitts T, et al. Thin-film thermoelectric devices with high room-temperature figures of merit. Nature, 2001, 413(6856): 597-602.

[10] Sales B C. Thermoelectric materials-smaller is cooler. Science, 2002, 295(5558): 1248-1249.

[11] Dresselhaus M S, Chen G, Tang M Y, et al. New directions for low-dimensional thermoelectric materials. Adv. Mater., 2007, 19(8): 1043-1053.

[12] Snyder G J, Toberer E S. Complex thermoelectric materials. Nature Mater., 2008, 7(2): 105-114.

[13] Cao Y Q, Zhao X B, Zhu T J, et al. Syntheses and thermoelectric properties of Bi2Te3/Sb2Te3 bulk nanocomposites with laminated nanostructure. Appl. Phys. Lett., 2008, 92(14): 143106-1-3.

[14] Xie W J, Tang X F, Yan Y G, et al. Unique nanostructures and enhanced thermoelectric performance of melt-spun BiSbTe alloys. Appl. Phys. Lett., 2009, 94(10): 102111-1-3.

[15] Yan X, Poudel B, Ma Y, et al. Experimental studies on anisotropic thermoelectric properties and structures of n-type Bi2Te2.7Se0.3. Nano Lett., 2010, 10(9): 3373-3378.

[16] Snyder G J, Lim J R, Huang C K, et al. Thermoelectric microdevice fabricated by a MEMS-like electrochemical process. Nature Mater., 2003, 2(8): 528-531.

[17] Chowdhury I, Prasher R, Lofgreen K, et al. On-chip cooling by superlattice-based thin-film thermoelectric. Nature Nanotech., 2009, 4(4): 235-238.

[18] Peranio N, Eibl O, Nurnus J. Structural and thermoelectric properties of epitaxially grown Bi2Te3 thin films and superlattices. J. Appl. Phys., 2006, 100(11): 114306-1-11.

[19] Walachová J, Zeipl R, Zelinka J, et al. High room-temperature figure of merit of thin layers prepared by laser ablation from Bi2Te3 target. Appl. Phys. Lett., 2005, 87(8): 081902-1-3.

[20] Bassi A L, Bailini A, Casari C S, et al. Thermoelectric properties of Bi-Te films with controlled structure and morphology. J. Appl. Phys., 2009, 105(12): 124307-1-9.

[21] Venkatasubramanian R, Colpitts T, Watko E, et al. MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications. J. Crystal Growth, 1997, 170(1-4): 817-821.

[22] Jung Y C, Kim J H, Suh S H, et al. Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates. J. Crystal Growth, 2006, 290(2): 441-445.

[23] da Silva L W, Kaviany M, Uher C. Thermoelectric performance of films in the bismuth-tellurium and antimony-tellurium systems. J. Appl. Phys., 2005, 97(11): 114903-1-10.

[24] Takashiri M, Takiishi M, Tanaka S, et al. Thermoelectric properties of n-type nanocrystalline bismuth-telluride-based thin films deposited by flash evaporation. J. Appl. Phys., 2007, 101(7): 074301-1-6.

[25] Huang B L, Lawrence C, Gross A, et al. Low-temperature characterization and micropatterning of coevaporated Bi2Te3 and Sb2Te3 films. J. Appl. Phys., 2008, 104(11): 113710-1-8.

[26] Yoo B Y, Huang C K, Lim J R, et al. Electrochemically deposited thermoelectric n-type Bi2Te3 thin films. Electrochimica Acta, 2005, 50(22): 4371-4377.

[27] Zhu W, Yang J Y, Zhou D X, et al. Electrochemical aspects and structure characterization of VA-VIA compound semiconductor Bi2Te3-Sb2Te3 superlattice thin films via electrochemical atomic layer epitaxy. Langmuir, 2008, 24(11): 5919-5924.

[28] Kim D H, Byon E, Lee G H, et al. Effect of deposition temperature on the structural and thermoelectric properties of bismuth telluride thin films grown by co-sputtering. Thin Solid Films, 2006, 510(1/2): 148-153.

[29] Huang H, Luan W L, Tu S T. Influence of annealing on thermoelectric properties of bismuth telluride films grown via radio frequency magnetron sputtering. Thin Solid Films, 2009, 517(13): 3731-3734.

[30] Kim D H, Lee G H. Effect of rapid thermal annealing on thermoelectric properties of bismuth telluride films grown by co-sputtering. Mater. Sci. Eng. B, 2006, 131(1/2/3): 106-110.

[31] Liao C N, She T H. Preparation of bismuth telluride thin films through interfacial reaction. Thin Solid Films, 2007, 515(20/21): 8059-8064.

[32] Guo J Y, Zhang Y W, Lu C. Effects of wetting and misfit strain on the pattern formation of heteroepitaxially grown thin films. Comp. Mater. Sci., 2008, 44(1): 174-179.

[33] Zhao L D, Zhang B P, Liu W S, et al. Effect of mixed grain sizes on thermoelectric performance of Bi2Te3 compound. J. Appl. Phys., 2009, 105(2): 023704-1-6.

射频磁控溅射制备层状Bi-Te薄膜及热电性能研究

Growth and Transport Properties of Layered Bismuth Telluride Thin Films via Radio Frequency Magnetron Sputtering

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