[1] Woohyun Jung, Hueup Song, Sang Whan Park, et al. Variation of contact angles with temperature and time in theAl-Al2O3. Met all. and Mater. Trans., 1996,27:51-55. [2] Ning X S, Ogawa Y, Sugauma K. Interface of aluminum/ceramic power substrates manufactured by casting-bonding process. Mat. Res. Soc. Symp. Proc., 1997,44(5):101-106. [3] Nagata C, Ning X S, Sakuraba M, et al. Process for Preparinga Ceramic Electronic Circuit Board and Process for Preparing Aluminum or Aluminum Alloy Bonded Ceramic Material. US Patent No. 5965193, 1999.10.12. [4] Lindemann Andreas, Strauch Gerhard. Properties of direct aluminum bonded substrates for power semiconductor components. IEEE Transactions on Power Electronics, 2007,22(2):384-391. [5] Peng R, Zhou H P, Ning X S,et al. Bonding Al on Al2O3 substrate. Key Engineering Materials, 2002,224 - 226:755-760. [6] 彭 榕, 周和平, 宁晓山, 等(PENG Rong, et al). Al/Al2O3陶瓷接合基板的制备及性能研究. 无机材料学报(Journal of Inorganic Materials), 2002,17(4):731-736. [7] Peng R, Zhou H P, Ning X S,et al. The study and fabrication of Al/AlN substrate. Materials Letters, 2002,56(4): 465-470. [8] 彭 榕, 周和平, 宁晓山, 等(PENGRong, et al). 铝/氮化铝电子陶瓷基板的制备及性能的研究. 无机材料学报(Journal of Inorganic Materials), 2002,17(6):1203-1208. |