强流脉冲电子束作用下单晶硅表层缺陷与结构变化

doi:10.3724/SP.J.1077.2010.01313

无机材料学报 ›› 2010, Vol. 25 ›› Issue (12): 1313-1317.DOI: 10.3724/SP.J.1077.2010.01313

强流脉冲电子束作用下单晶硅表层缺陷与结构变化

王雪涛¹, 关庆丰¹, 顾倩倩¹, 彭冬晋¹, 李艳¹, 陈波²

(1. 江苏大学材料学院, 镇江 212013; 2. 中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室,
长春 130033)

收稿日期:2010-03-22 修回日期:2010-05-31 出版日期:2010-12-20 网络出版日期:2010-11-24
基金资助:
国家自然科学基金(50671042); 应用光学国家重点实验室开放基金; 江苏大学科技创新团队及高级人才基金(07JDG032)

Defects and Microstructures in the Surface Layer of Single-crystal Silicon Induced by High-current Pulsed Electron Beam

WANG Xue-Tao¹, GUAN Qing-Feng¹, GU Qian-Qian¹, PENG Dong-Jin¹, LI Yan1, CHEN Bo²

(1. College of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China; 2. State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China)

Received:2010-03-22 Revised:2010-05-31 Published:2010-12-20 Online:2010-11-24
Supported by:
National Nature Science Foundation of China (50671042); Opening Foundation of State Key Laboratory of Applied
Optices; Jiangsu University Science Foundation (07JDG032)

摘要/Abstract

摘要： 为了研究超快变形诱发的非金属材料的微观结构状态, 利用强流脉冲电子束(HCPEB)技术对单晶硅进行了辐照处理, 并用透射电镜对电子束诱发的表层微观结构进行了分析. 实验结果表明, HCPEB辐照后单晶Si表层形成了丰富的缺陷结构, 互相平行的螺位错和外禀层错是辐照后最为典型的缺陷结构; 同时HCPEB辐照还诱发了密度很高的包括位错圈和SFT在内空位簇缺陷, 幅值极大和应变速率极高的表面应力导致的{111}面整体位移可能是大量空位簇缺陷形成的根本原因. 此外, HCPEB处理可在单晶Si表面形成纳米和非晶混合结构.

关键词: 强流脉冲电子束, 单晶硅, 结构缺陷, 空位簇

Abstract: In order to investigate the microstructures of nonmetallic material induced by high-speed deformation, the high-current pulsed electron beam (HCPEB) technique was used to irradiate the single-crystal silicon. The surface microstructures induced by electron beam were studied by transmission electron microscope (TEM). The experimental results showed that a large number of defect structures were formed by the HCPEB irradiation. Among them, the typical defect structures were the parallel screw dislocations and the extrinsic stacking faults. In the meantime, the HCPEB irradiation induced high density of vacancy cluster defects. The surface stress with very high value and strain rate led to the integral shift of (111) crystal plane, which might be the dominating reason of the formation of the massive vacancy cluster defects. In addition, the mixtures of nanocrystal and amorphous in the surface of single-crystal silicon can be formed by HCPEB technique.

Key words: high-current pulsed electron beam, single-crystal silicon, structure defects, vacancy clusters

中图分类号:

王雪涛, 关庆丰, 顾倩倩, 彭冬晋, 李艳, 陈波. 强流脉冲电子束作用下单晶硅表层缺陷与结构变化[J]. 无机材料学报, 2010, 25(12): 1313-1317.

WANG Xue-Tao, GUAN Qing-Feng, GU Qian-Qian, PENG Dong-Jin, LI Yan1, CHEN Bo. Defects and Microstructures in the Surface Layer of Single-crystal Silicon Induced by High-current Pulsed Electron Beam[J]. Journal of Inorganic Materials, 2010, 25(12): 1313-1317.

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强流脉冲电子束作用下单晶硅表层缺陷与结构变化

Defects and Microstructures in the Surface Layer of Single-crystal Silicon Induced by High-current Pulsed Electron Beam

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