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BST/BZT/BST多层薄膜结构与性能研究

秦文峰1, 熊 杰2, 李言荣2
  

  1. 1. 中国民航飞行学院 航空工程学院, 广汉 618307; 2. 电子薄膜与集成器件国家重点实验室, 电子科技大学, 成都 610054
  • 收稿日期:2009-04-30 修回日期:2009-09-11 出版日期:2010-03-20 网络出版日期:2010-03-20

Structure and Properties of BST/BZT/BST Multilayer Film

QIN Wen-Feng1, XIONG Jie2, LI Yan-Rong2   

  1. 1. Aviation Engineering Institute, Civil Aviation Flight University of China, Guanghan 618307, China; 2. State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China
  • Received:2009-04-30 Revised:2009-09-11 Published:2010-03-20 Online:2010-03-20

摘要: 利用脉冲激光沉积法在LaNiO3 /LaAlO3 (001)基片上生长了Ba 0.6 Sr 0.4 TiO3(BST)和Ba(Zr 0.2 Ti 0.8 )O3(BZT)单层薄膜,以及Ba(Zr 0.2 Ti 0.8 )O3/ Ba 0.6 Sr 0.4 TiO3 / Ba(Zr 0.2 Ti 0.8 )O3(BZT/BST/BZT)多层薄膜.X射线衍射(XRD)分析发现,BST、BZT和LNO薄膜都具有高度的(00l)取向.原子力显微镜 (AFM)显示三种样品表面光滑无裂纹,晶粒尺寸和表面粗糙度相当.电容测试表明,相对BST、BZT单层薄膜,多层薄膜具有最大的品质因数42.07.表明多层薄膜在微波应用中具有很大的潜力.

关键词: BST/BZT/BST, 薄膜, 介电常数, 漏电流

Abstract: Ba 0.6 Sr 0.4 TiO3(BST) thin film, Ba(Zr 0.2 Ti 0.8 )O3(BZT)thin film and Ba 0.6 Sr 0.4 TiO3(BST)/Ba(Zr 0.2 Ti 0.8 )O3(BZT)/Ba 0.6 Sr 0.4 TiO3(BST) (BST/BZT/BST) multilayer thin film were prepared by pulsed laser deposition (PLD) on the LaNiO3 (LNO) coated LaAlO3 (LAO) substrate. All the three kinds of films were characterized by XRD and atomic force microscope (AFM). XRD tests reveal that highquality [00l]oriented films are obtained.AFM results show that the grain size and root mean square (RMS) roughness of BST/BZT/BST sandwich film are similar to that of BST film and BZT film. Compared with BST and BZT film, the BST/BZT/BST film posses the highest figure of merit FOM (42.07), indicating the highly promising potential of BST/BZT/BST film for the application in tunable microwave device.

Key words: BST/BZT/BST film, thin films, dielectric constant, leakage current characteristics

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