玻璃基Pt/Pb(Zr 0.4 Ti 0.6 )O3/ITO电容器的结构及物理性能研究

doi:10.3724/SP.J.1077.2010.00242

摘要/Abstract

摘要： 采用溶胶凝胶方法在玻璃基ITO电极上制备了Pt/ Pb(Zr _0.4 Ti _0.6 )O₃(PZT)/ITO电容器.采用X射线衍射仪、铁电测试仪、分光光度计对其微观结构、电学性能及光学性能进行了测量.结果表明PZT薄膜结晶良好,具有（101）高度择优取向.铁电电容器具有良好的保持特性和抗疲劳特性,具有较大的剩余极化强度和电阻率,5V电压下的剩余极化强度和电阻率分别为41.7μC/cm²和2.5×10⁹Ω·cm;漏电流测量结果表明电压小于0.8V时为欧姆导电机制,当电压大于0.8V时,漏电流满足肖特基发射机制.光学透射谱结果表明在短波范围内,PZT表现出强吸收作用;在长波范围内,PZT表现为强透射,最大透射率达到95%.

关键词: Pt/PZT/ITO, 溶胶凝胶法, 电学性能

Abstract: Pt/Pb(Zr0.4Ti0.6)O3 (PZT)/ITO capacitors were fabricated on glass substrate, where PZT film was prepared by solgel method. The structural and physical properties of Pt/PZT/ITO capacitors were investigated. The microstructural, electrical and optical properties of Pt/PZT/ITO capacitors were characterized by Xray diffraction (XRD), ferroelectric tester, UVspectrophotometer, respectively. It is found that PZT is highly (101) oriented and well crystallized. Ferroelectric measurements indicate that Pt/PZT/ITO capacitor, measured at 5V, possesses good ferroelectric properties, such as fatiguefree characteristics, retention characteristics, large remnant polarization (41.7μC/cm² ) and high resistivity (2.5×10⁹Ω·cm). The analysis of the leakage current mechanism indicates that Pt/PZT/ITO capacitor showes Ohmiclike behaviour at low voltages (<0.8V) and Schottky emission at high voltages (>0.8V). From the optical measurement, stronger absorption in shortwave and stronger transmission in longwave range are observed. The maximum value of transmission reaches 95%.

Key words: Pt/PZT/ITO, sol-gel method, electric property

中图分类号:

TN104
O484

周阳,程春生,赵敬伟,郑红芳,赵庆勋,彭英才,刘保亭. 玻璃基Pt/Pb(Zr_0.4 Ti _0.6 )O₃/ITO电容器的结构及物理性能研究[J]. 无机材料学报, DOI: 10.3724/SP.J.1077.2010.00242.

ZHOU Yang,CHENG Chun-Sheng,ZHAO Jing-Wei,ZHENG Hong-Fang,ZHAO Qing-Xun,PENG Ying-Cai,LIU Bao-Ting. Investigation of Structural and Physical Properties of Pt/Pb(Zr _0.4 Ti _0.6 )O₃/ITO Capacitors Fabricated on Glass Substrate[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2010.00242.

参考文献

［1］Muller Ch, Menou N, Barrett R, et al. Nondestructive microstructural diagnostic of integrated ferroelectric capacitor arrays: Correlation with electrical characteristics. J. Appl. Phys., 2006, 99(5): 054504-1-5.

［2］Shim S I, Kim S I, Kim Y T, et al. Operation of single transistor type ferroelectric random access memory. Electron. Lett., 2004, 40(22): 1397-1398.

［3］Lee S H, Esashi M. Characteristics on PZT (Pb(Zr_xTi _1-x )O3) films for piezoelectric angular rate sensor. Sensors and Actuators A, 2004, 114(1): 88-92.

［4］Hu S H, Meng X J, Hu G J, et al. Preparation and optical waveguide property of metal alkoxide solutionderived Pb(Zr _0.5-Ti _{0. 5})O₃ thick films. Appl. Phys. Lett., 2004, 84(18): 3609-3611.

［5］Lee K B, Lee K H, Ju B K. Preparation of Pb(Zr _{0. 35} Ti _{0. 65} )O₃ films on conducting oxide Ga-doped ZnO films for transparent ferroelectric thinfilm transistors. Integrated Ferroelectrics, 2006, 84: 159-168.

［6］Titkov I, Pronin I, Delimova L, et al. Ferroelectric fieldeffect transistor based on transparent oxides. Thin Solid Film, 2007, 515(24): 8748-8751.

［7］Peng D L, Jiang S R, Xie L. Study on the gas-sensitive effect of CdIn2O4 thin films. Physica Status Solidi (a), 1993, 136(2): 441-446.

［8］Kim H M, Ahn J S, Lee K H, et al. Optimized ferroelectric PZT films deposited on various transparent conducting oxides for ferroelectric transparent thinfilm transistors. J. Korean Phys. Soc., 2007, 50(6): 1740-1744.

［9］Liu B T, Cheng C S, Li F, et al. Ni-Al diffusion barrier layer for integrating ferroelectric capacitors on Si. Appl. Phys. Lett., 2006, 88(25): 252903-1-3.

［10］Liu B T, Yan X B, Zhang X, et al. Barrier performance of ultrathin Ni-Ti film for integrating ferroelectric capacitors on Si. Appl. Phys. Lett., 2007, 91(14): 142908-1-3.

［11］Pintilie L, Vrejoiu I, Hesse D, et al. Polarization fatigue and frequencydependent recovery in Pb(Zr, Ti)O₃ epitaxial thin films with SrRuO₃ electrodes. Appl. Phys. Lett., 2006, 88(10): 102908-1-3.

［12］Zafar S, Jones R E, Jiang B, et al. Oxygen vacancy mobility determined from current measurements in thin Ba _0.5 Sr _0.5 TiO₃ films. Appl. Phys. Lett., 1998, 73(2): 175-177.

［13］Scott J F, Dawber M. Oxygenvacancy ordering as a fatigue mechanism in perovskite ferroelectrics. Appl. Phys. Lett., 2000, 76(25): 3801-3803.

［14］Chen Y, Mclntyre P C. Effects of chemical stability of platinum/lead zirconate titanate and iridium oxide/lead zirconate titanate interfaces on ferroelectric thin film switching reliability. Appl. Phys. Lett., 2007, 91(23): 232906-1-3.

［15］Lou X J, Zhang M, Redfen S A T, et al. Local phase decomposition as a cause of polarization fatigue in ferroelectric thin films. Phys. Rev. Lett., 2006, 97(17): 17760-1-4.

［16］Zubko P, Jung D J, Scott J F. Electrical characterization of PbZr_0.4Ti _0.6 O₃ capacitors. J. Appl. Phys., 2006, 100(11): 114113-1-7.

［17］Shin J C, Hwang C S, Kim H J, et al. Leakage current of sol-gel derived Pb(Zr, Ti)O₃ thin films having Pt electrodes. Appl. Phys. Lett., 1999, 75(21): 3411-3413.

［18］Pham M T N, Boukamp B A, Bouwmeester H J M, et al. Microstructural and electrical properties of nanocomposite PZT/Pt thin films made by pulsed laser deposition. Ceramics International, 2004, 30(7): 1499-1503.

［19］Chopra S, Sharma S, Goel T C, et al. Electrical and optical properties of sol-gel derived Ca-modified PbTiO₃ thin films. Materials Chemistry and Physics, 2005, 91(1): 161-165.

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玻璃基Pt/Pb(Zr_0.4 Ti _0.6 )O₃/ITO电容器的结构及物理性能研究

Investigation of Structural and Physical Properties of Pt/Pb(Zr _0.4 Ti _0.6 )O₃/ITO Capacitors Fabricated on Glass Substrate

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