[1]文 海, 王晓慧, 赵 巍, 等(WEN Hai, et al). 高温压电陶瓷研究进展. 硅酸盐学报(Journal of the Chinese Ceramic Society), 2006, 34(11): 1367-1373.
[2]Eitel R E, Randall C A, Shrout T R, et al. New high temperature morphotropic phase boundary piezoelectrics based on Bi(Me)O3-PbTiO3 ceramics. Jpn. J. Appl. Phys., 2001, 40(10): 5999-6002.
[3]冯亚军, 徐 卓, 李振荣, 等(FENG Ya-Jun, et al). 准同型相界(MPB)附近BS-PT高温压电陶瓷研究.无机材料学报(Journal of Inorganic Materials), 2006, 21(5): 1127-1133.
[4]Zou T T, Wang X, H, Chen I W, et al. Bulk dense fine-grain (1-x)BiScO3-xPbTiO3 ceramics with high piezoelectric coefficient. Appl. Phys. Lett., 2008, 93(19): 192913-1-3.
[5]Wolny W W. European approach to development of new environmentally sustainable electroceramics. Ceram. Int., 2004, 30(7): 1079-1083.
[6]Takenaka T, Nagata H. Current status and prospects of lead-free piezoelectric ceramics. J. Eur. Ceram. Soc., 2005, 25(12): 2693-2700.
[7]Shrout T R, Zhang S J. Lead-free piezoelectric ceramics: alternatives for PZT? J. Electroceram., 2007, 19(1): 111-124.
[8]Takenaka T, Nagata H, Hiruma Y. Current developments and prospective of leadfree piezoelectric ceramics. Jpn. J. Appl. Phys., 2008, 47(5): 37873801.
[9]Chu B J, Chen D R, Li G R, et al. Electrical properties of Na 0.5 Bi 0.5 TiO3-BaTiO3 ceramics. J. Eur. Ceram. Soc., 2002, 22(13): 2115-2121.
[10]Trodahl H J, Klein N, Damjanovic D, et al. Raman spectroscopy of (K,Na)NbO3 and (K,Na) 1-x LixNbO3. Appl. Phys. Lett., 2008, 93(26): 262901-1-3.
[11]杜红亮, 李智敏, 周万城,等(DU Hong-Liang, et al). (Na0.5 K 0.5)NbO3基无铅压电陶瓷的研究进展. 无机材料学报(Journal of Inorganic Materials), 2006, 21(6): 1281-1291.
[12]Saito Y, Takao H, Tani T, et al. Lead-free piezoelectrics. Nature, 2004, 432(7013): 84-87.
[13]Guo Y P, Kakimoto K, Ohsato H. Phase transitional behavior and piezoelectric properties of (Na 0.5 K 0.5 )NbO3- LiNbO3 ceramics. Appl. Phys. Lett., 2004, 85(18): 4121-4123.
[14]忻 隽, 郑燕青, 施尔畏(XIN Jun, et al). 材料压电性能的第一性原理计算回顾与展望. 无机材料学报(Journal of Inorganic Materials), 2007, 22(2): 193-200.
[15]Yamashita Y, Hosono Y, Harada K, et al. Effect of molecular mass of Bsite ions on electromechanical coupling factors of leadbased perovskite piezoelectric materials. Jpn. J. Appl. Phys., 2000, 39(9B): 5593-5596.
[16]Okada M, Yoshimura T, Ashida A, et al. Synthesis of Bi(FexAl 1-x )O3 thin films by pulsed laser deposition and its structural characterization. Jpn. J. Appl. Phys., 2004, 43(9B): 6609 -6612.
[17]Baettig P, Schelle C F, LeSar R, et al. Theoretical prediction of new highperformance leadfree piezoelectrics.Chem. Mater., 2005, 17(6): 1376-1380.
[18]Wang H, Wang B, Li Q K, et al. First-principles study of the cubic perovskites BiMO3 (M=Al, Ga, In and Sc). Phys. Rev. B, 2007, 75(24): 245209-1-9.
[19]Wang H, Wang B, Wang R, et al. Ab initio study of structural and electronic properties of BiAlO3 and BiGaO3. Physica B, 2007, 390(1/2): 96-100.
[20]Li C L, Wang B, Wang R, et al. Firstprinciples study of structural, elastic, electronic, and optical properties of hexagonal BiAlO3. Physica B, 2008, 403(4): 539-543.
[21]Mangalam R V K, Ranjith R, Iyo A, et al. Ferroelectricity in Bi 26-x MxO40-δ (M=Al and Ga) with the γ-Bi2O3 structure. Solid State Commun., 2006, 140(1): 42-44.
[22]Belik A A, Wuernisha T, Kamiyama T, et al. High-pressure synthesis, crystal structures, and properties of perovskite-like BiAlO3 and pyroxene-like BiGaO3. Chem. Mater., 2006, 18(1): 133-139.
[23]Zylberberg J, Belik A A, TakayamaMuromachi E, et al. Bismuth aluminate: a new highTC lead-free piezo-/ferroelectric. Chem. Mater., 2007, 19(26): 6385-6390.
[24]Akiyama M, Kamohara T, Kano K, et al. Enhancement of piezoelectric response in scandium aluminum nitride alloy thin films prepared by dual reactive cosputtering. Adv. Mater., 2009, 21(5): 593-596.
[25]Mangalam R V K, Bhat S V, Iyo A, et al. Dielectric properties, thermal decomposition and related aspects of BiAlO3. Solid State Commun., 2008, 146(11/12): 435-437.
[26]Wu N N, Hou Y D, Wang C, et al. Effect of sintering temperature on dielectric relaxation and Raman scattering of 0.65Pb(Mg 1/3 Nb 2/3 )O3-0.35PbTiO3 system. J. Appl. Phys., 2009, 105(8): 084107-1-6.
[27]Zhao L Y, Hou Y D, Chang L M, et al. Microstructure and electrical properties of 0.5PZN-0.5PZT relaxor ferroelectrics close to the morphotropic phase boundary. J. Mater. Res., 2009, 24(6): 2029-2034.
[28]Zylberberg J, Ye Z G. Improved dielectric properties of bismuth-doped LaAlO3. J. Appl. Phys., 2006, 100(8): 086102-1-3.
[29]Yu H C, Ye Z G. Dielectric properties and relaxor behavior of a new (1-x)BaTiO3-xBiAlO3 solid solution. J. Appl. Phys., 2008, 103(3): 034114-1-5.
[30]Yu H C, Ye Z G. Dielectric, ferroelectric, and piezoelectric properties of the leadfree (1-x)(Na 0.5 Bi 0.5 )TiO3-xBiAlO3 solid solution. Appl. Phys. Lett., 2008, 93(11): 112902-1-3.
[31]Zuo R Z, Lv D, Fu J, et al. Phase transition and electrical properties of lead free (Na 0.5 Bi 0.5 )TiO3-BiAlO3 ceramics. J. Alloy. Compd., 2009, 476(1/2): 836-839.
[32]Kalyani A K, Garg R, Ranjan R. Competing A-site and B-site driven ferroelectric instabilities in the (1-x)PbTiO3-(x)BiAlO3 system. Appl. Phys. Lett., 2009, 94(20): 202903-1-3.
[33]Mao Y B, Park T J, Zhang F, et al. Environmentally friendly methodologies of nanostructure synthesis. Small, 2007, 3(7): 1122-1139.
[34]Ge H Y, Hou Y D, Zhu M K, et al. Facile synthesis and high d33 of singlecrystalline KNbO3 nanocubes. Chem. Commun., 2008, 41: 5137-5139.
[35]Hou Y D, Hou L, Zhang T T, et al. (Na 0.8 K 0.2 )0.5 Bi 0.5 TiO3 nanowires: lowtemperature solgelhydrothermal synthesis and densification. J. Am. Ceram. Soc., 2007, 90(6): 1738-1743.
[36]Son J Y, Park C S, Shin Y H. Epitaxial BiAlO3 thin film as a lead-free ferroelectric material. Appl. Phys. Lett., 2008, 92(22): 222911-1-3.