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无机材料学报

无机材料学报

• 研究论文 • 上一篇    

等离子体源离子渗氮合成硼碳氮薄膜的研究

雷明凯1,2; 袁力1; 张仲麟1; 马腾才2   

  1. 1.大连理工大学材料工程系; 大连 116024; 2大连理工大学三束材料改性国家重点联合实验室, 大连 116024
  • 收稿日期:1998-03-16 修回日期:1998-04-27 出版日期:1999-02-20 网络出版日期:1999-02-20

B-C-N Films Synthesized by Plasma Source Ion Nitriding

LEI Ming-Kai1,2; YUAN Li-Jiang1; ZHANG Zhong-Lin; MA Teng-Cai2   

  1. 1.Department of Materials Engineering; Dalian University of Technology Dalian 116024 China; 2.National La6oratory of Materials Modification; Daling University of Technology Dalian116024 China
  • Received:1998-03-16 Revised:1998-04-27 Published:1999-02-20 Online:1999-02-20

PDF (PC)

884

被引次数

15

摘要： 采用等离子体源离子渗氮，即低能（1-3keV）、超大剂量（1019～1020ions．cm-2）氮离子注入-同步热扩散技术，在300～500℃处理碳化硼薄膜，合成了硼碳氮三元薄膜．俄歇电子能谱和漫反射富氏变换红外光谱分析表明，合成的硼碳氮薄膜是碳硼比固定，氮含量可控的非晶态薄膜．300℃渗氮的薄膜由sp~2型的硼、碳、氮微区构成，而500℃渗氮的薄膜则由sp3和sp2型复合的微区组成．较高的渗氮工艺温度促进sP3型结构的形成，渗氮工艺时间对薄膜结构的影响不显著．

关键词: 等离子体源离子渗氮, 硼碳氮薄膜

Abstract: An amorphous boron-carbon-nitrogen film was synthesized by plasma source ion nitriding, that is nitrogen ion implantation at low energy (1～3 keV) and superhigh dose
(1019～1020 ions·cm-2) and simultaneously indiffusion. Auger electron spectroscopy and diffuse reflectance Fourier transform
infrared spectra showed that the films are mainly composed of sp2 and sp3 plain (graphite- and pyridine-like) microdomains
with a fixed B/C ratio and a controllable nitrogen content at a nitriding temperature of 500℃ for a nitriding time from 2 to 6 h. The formation of sp3 plain microdomains strongly depends
on the nitriding temperature and softly on the nitriding time.

Key words: plasma source ion nitriding, boron-carbon-nitrogen film

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