1 Chedzey H A, Hurle D T. J. Nature, 1966, 210: 933--936 2 Uecch H P, Flemings M C. J. Appl, Phys., 1966, 37: 2021--2025 3 Hoshikawa K. Japan. J. Appl. Phys., 1982, 21: L545--L547 4 Suzuki T, Isawa N, Okubo Y, et al., In: Semiconductor. Silicon 1981, Eds. Huff H.R., Kriegler R.J. and Takeishi Y. (Electrochem. Soc., Pennington, NJ, 1981) 181--184 5 Terashima K, Fukuda T. J. Crystal Growth, 1983, 63: 423--425 6 Tohno S, Shinoyama S, et al., J. Crystal Growth, 1985, 73: 190--192 7 Tsukanoto K. J. Crystal Growth, 1983, 61: 199--209 8 Tsukamoto K, T Abe, et al., J. Crystal Growth, 1983, 63: 215--218 9 Jin W Q, Tsukamoto K. J. Crystal Growth, 1992, 123: 327--332 10 Jin W Q, Komatsu H, et al., J. Crystal Growth, 1990, 99: 128--133 11 Jin W Q, Pan Z L, et al., J. Crystal Growth, 175(1998) to be published 12 Jin W Q, Chen J Y, Li W S, et al., Ferroelectrics, 1993, 142: 13--18 13 Jin W Q, Chen J Y, Li W S. Microgravity Q. 1993, 3: 129--133 14 Reisman A, Holtzberg F. J. Am. Chem. Soc., 1955, 77: 2115--2120 15 金蔚青,潘志雷, 程宁等(JIN Wei-Qing, et al), 无机材料学报(Journal of Inorganic Materials), 1997, 12 (3): 279--285 |