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无机材料学报

无机材料学报

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含氮体系CVD低压金刚石薄膜淀积条件

刘志杰; 张卫; 张剑云; 万永中; 王季陶   

  1. 复旦大学电子工程系CVD研究室; 上海 200433
  • 收稿日期:1998-02-27 修回日期:1998-03-24 出版日期:1999-02-20 网络出版日期:1999-02-20

Deposition Conditions for CVD Diamond Films under Low Pressure with Nitrogen Addition

LIU Zhi-Jie; ZHANG Wei; ZHANG Jian-Yun; WAN Yong-Zhong; WANG Ji-Tan   

  1. Dapt. of electronic engineering; CVD lab.; Fudan University Shanghai 200433 China
  • Received:1998-02-27 Revised:1998-03-24 Published:1999-02-20 Online:1999-02-20

PDF (PC)

745

被引次数

3

摘要： 根据非平衡热力学耦合模型理论首次计算得到了碳氢氮体系的金刚石生长的非平衡定态相图与近几年在国际上发表的该体系实验结果相符合，可以为今后的实验研究提供定量化的理论依据．根据理论相图讨论了系统压力和体系中氮的添加对金刚石薄膜淀积条件的影响．

关键词: 金刚石, 相图, 化学气相淀积, 氮, 薄膜

Abstract: Non-equilibrium stationary phase diagrams for diamond growth with nitrogen addition into the reaction system were calculated and coordinate
well with published experimental results. Therefore they can direct the experimental research on the subject. The effects of nitrogen addition on
the deposition of diamond films were discussed by using the phase diagrams. The nitrogen addition can accelerate the deposition rate of diamond films
in two aspects: enhance the CH3 concentration at the growth surface and accelerate the abstraction of H atoms covered the growth surface sites.

Key words: diamond, phase diagram, chemical vapor deposition, nitrogen, film

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