[1]Dong R, Wang Q, Chen L D, et al. Appl. Phys. Lett., 2005, 86(17): 172107-1-3. [2]Asamitsu A, Tomioka Y, Kuwahara H, et al. Nature, 1997, 388(3): 50-52. [3]Beck A, Bednorz J G, Gerber Ch, et al. Appl. Phys. Lett., 2000, 77(1): 139-141. [4]Watanabe Y, Bednorz J G, Bietsch A, et al. Appl. Phys. Lett., 2001, 78(23): 3738-3740. [5]Choi B J, Jeong D S, Kim S K, et al. J. Appl. Phys., 2005, 98(3): 033715-1-10. [6]Seo S, Lee M J, Seo D H, et al. Appl. Phys. Lett., 2004, 85(23): 5655-5657. [7]Shima H, Takano F, Yamai Y, et al. Jpn. J. Appl. Phys., 2007, 46(3): L57-L60. [8]Park K C, Basavaiah S. J.Non-Cryst. Solids, 1970, 2: 284-291. [9]Choi B J, Choi S, Kim K M, et al. Appl. Phys. Lett., 2006, 89(1): 012906-1-3. [10]Rohde C, Choi B J, Jeong D S, et al. Appl. Phys. Lett., 2005, 86(26): 262907-1-3. [11]Jeong D S, Schroeder H, Waser R. Appl. Phys. Lett., 2006, 89(8): 082909-1-3. [12]Kim K M, Choi B J, Hwang C S, et al. Appl. Phys. Lett., 2007, 90(24): 242906-1-3. [13]Inoue Isao H, Rozenberg M J. Strong electron correlation effects in non-volatile electronic memory devices. Proceedings for the Non-Volatile memory Technology Symposium, Dallas, Taxes, 2005. P131-136. [14]Kim K M, Choi B J, Shin Y C, et al. Appl. Phys. Lett., 2007, 91(1): 012907-1-3. [15]Fujimoto M, Koyama H, Konagai M, et al. Appl. Phys. Lett., 2006, 89(22): 223509-1-3. |