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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

6H-SiC单晶表面ZnO薄膜的制备及其结构表征

孙柏1,2, 李锐鹏1, 赵朝阳1, 徐彭寿1, 张国斌1, 潘国强1, 陈秀芳3, 徐现刚3   

  1. 1. 中国科学技术大学国家同步辐射实验室, 合肥 230029; 2. 中国科学院合肥智能机械研究所, 合肥 230031; 3. 山东大学晶体材料国家重点实验室, 济南 250100

  • 收稿日期:2007-08-13 修回日期:2007-09-25 出版日期:2008-07-20 网络出版日期:2008-07-20

Preparation and Characteristic of ZnO Thin Film Grown on 6H-SiC Single Crystal Substrate

SUN Bai 1,2, LI Rui-Peng 1, ZHAO Chao-Yang 1, XU Peng-Shou 1, ZHANG Guo-Bin 1,PAN Guo-Qiang 1, CHEN Xiu-Fang 3, XU Xian-Gang 3   

  1. 1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China; 2. Institute of Intelligent Machines,Chinese Academy of Sciences, Hefei 230031, China; 3. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • Received:2007-08-13 Revised:2007-09-25 Published:2008-07-20 Online:2008-07-20

PDF (PC)

2090

被引次数

3 | 1

摘要： 利用脉冲激光淀积(PLD)技术在6H-SiC单晶衬底上制备了ZnO薄膜. 利用X射线衍射(XRD), 反射式高能电子衍射(RHEED)和同步辐射掠入射X射线衍射(SRGID)φ扫描等实验技术研究了ZnO薄膜的结构. 结果表明:在单晶6H-SiC衬底上制备的ZnO薄膜已经达到单晶水平, 不同入射角的SRGID结果, 显示了ZnO薄膜内部不同深度处a方向的晶格弛豫是不一致的, 从接近衬底界面处到薄膜的中间部分再到薄膜的表面处, a方向的晶格常数分别为0.3264、0.3272和0.3223nm. 通过计算得到ZnO薄膜的泊松比为0.504, ZnO薄膜与单晶6H-SiC衬底在平行于衬底表面a轴方向的实际晶格失配度为5.84%.

关键词: 脉冲激光淀积, 氧化锌, 碳化硅, 掠入射X射线衍射

Abstract: ZnO thin film was prepared on the 6H-SiC single crystal substrate by pulsed laser deposition (PLD) method. X-ray diffraction(XRD), reflection high energy electron diffraction(RHEED) and Phi scan of grazing incidence X-ray diffraction with synchrotron radiation (SRGID) were employed to investigate the structure properties of ZnO thin film. The results show that single crystal ZnO thin film is prepared on 6H-SiC single crystal substrate. The results of SRGID with different grazing incidence angles indicate that the crystal relaxation along the c-axis in ZnO thin film is not uniform. The crystal parameters of a-axis are 0.3264, 0.3272 and 0.3223nm respectively, which correspond to the detected
depth of the interface layers, the middle section and the surface layers of the ZnO film. The calculated results show that the Poisson ratio of ZnO thin film is 0.504 and the lattice mismatch of a-axis between the ZnO thin film and 6H-SiC substrate is 5.84%.

Key words: pulsed laser deposition, ZnO, SiC, X-ray grazing incidence diffraction

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