高级检索
无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

掺杂SnO2透明导电薄膜电学及光学性能研究

郭玉忠; 王剑华; 黄瑞安; 王贵青   

  1. 昆明理工大学新材料制备与加工省重点实验室 昆明 650093
  • 收稿日期:2001-01-12 修回日期:2001-04-17 出版日期:2002-01-20 网络出版日期:2002-01-20

Electrical and Optical Properties of Transparent and Conductive Sb-Doped SnO2 Films

GUO Yu-Zhong; WANG Jian-Hua; HUANG Rui-An; WANG Gui-Qing   

  1. Novel Materials Preparation & Processing Provincial Laboratory; Kunming University of Science & Tech-nology; Kunming 650093; China
  • Received:2001-01-12 Revised:2001-04-17 Published:2002-01-20 Online:2002-01-20

PDF (PC)

1625

摘要： 通过实验测量 ｓｏｌ－ｇｅｌ工艺制备的 Ｓｂ掺杂 ＳｎＯ２薄膜载流子浓度、迁移率、电阻率、膜厚，紫外－可见光区透射率、反射率等性质，详细研究了Ｓｂ掺杂ＳｎＯ２薄膜电学与光学性能．实验发现，薄膜具有良好的透光性和较高导电性，膜内载流子浓度高达１０２０ｃｍ－３，电阻率～１０－２Ω·ｃｍ，透光率高达 ９０％，ＳｎＯ２膜禁带宽度 Ｅｇ≈３７～３．８０ｅＶ．

关键词: Sb掺杂SnO2薄膜, 导电性测量, 透光率与反射率

Abstract: Based on the measurement and analysis of carier concentration ne, mobility μe, electrical resistivity ρ, film thickness d,
refractive index n, transmittance T(λ) and reflectivity R(λ) in ultraviolet-visible range, the eletrical and optical behaviours of Sb-doped SnO2 thin films derived
by sol-gel processing were investigated. The experimental data show that the SnO2 thin films derived by the sol-gel processing have favourable electrical
conductivity and transmittance in visible light range, in which n-type carrier concentration ne reachs to 1020cm-3, electrical resistivity
ρ～10-2Ω．cm, transmittance T～90%, as well as forbiden band gap Eg=3.7～3.8eV.

Key words: Sb-doped SnO2 thin films, conductivity measurements, transmittance and reflectivity

中图分类号: