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无机材料学报

无机材料学报

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WO3/Si纳米晶薄膜的脉冲准分子激光沉积及结构分析

方国家1,2; 刘祖黎1; 姚凯伦1,3   

  1. 1. 华中科技大学激光技术国家重点实验室和物理系 武汉 430074; 2. 襄樊学院物理系, 襄樊 441053; 3. 中国科学院国际材料物理中心, 沈阳 110015
  • 收稿日期:2000-12-28 修回日期:2001-04-03 出版日期:2002-01-20 网络出版日期:2002-01-20

Preparation and Structure of Nano-crystalline WO3(Si) Thin Films by Pulsed Excimer Laser Deposition

FANG Guo-Jia1,2; LIU Zu-Li1; YAO Kai-Lun1,3   

  1. 1. National Lab. of Laser Technology and Department of Physies; Huazhong Univ. of Sci. &Tech.; Wuhan 430074; China; 2. Department of Physics; Xiangfan Univ.; Xiangfan 441053, China; 3. International Center for Material Physics, Chinese Academy of Sciences, Shenyang 110015, China
  • Received:2000-12-28 Revised:2001-04-03 Published:2002-01-20 Online:2002-01-20

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摘要： 采用脉冲准分子激光大面积扫描沉积技术，在Ｓｉ（１１１）单晶衬底上沉积了 ＷＯｘ薄膜．采用Ｘ射线衍射（ＸＲＤ）、喇曼光谱（ＲＳ）、付里叶红外光谱（ＦＴ－ＩＲ）及透射电镜扫描附件（ＳＴＥＭ）对不同条件下沉积的样品进行了结构分析．结果表明，氧分压和沉积温度是决定薄膜结构和成份的主要参数．在沉积温度３００℃以上及２０Ｐａ氧压下得到了三斜相纳米晶ＷＯ３薄膜．

关键词: 三氧化钨薄膜, 纳米晶, 脉冲准分子激光沉积（PLD）, 结构分析, Si（111）衬底

Abstract: WOx thin films were successfully synthesized on Si (111) substrate at different conditions by using scanning excimer laser ablation technique. The structure of WOx thin films deposited
at different conditions was analyzed by STEM, XRD, RS. The thin films deposited at 300 and 400℃ under 20Pa oxygen pressure showed nano-crystalline triclinic structure.
The experimental results illustrate that the oxygen pressure and the deposition temperature are two important parameters for determining the
structure and chemical composition of the synthesized thin films.

Key words: WO3 thin films, nano-crystalline, PLD technique, structural analyses, preparation conditions, Si （111）

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