钆掺杂钨酸铅闪烁晶体的介电双弛豫峰研究

无机材料学报

钆掺杂钨酸铅闪烁晶体的介电双弛豫峰研究

黄红伟¹; DONG Ming²; YE Zuo-Guang²; 冯锡淇¹

1. 中国科学院无机功能材料开放实验室中国科学院上海硅酸盐研究所, 上海 200050; 2. Dept.of Chemistry Simon Freaser University, Canada

收稿日期:2001-01-09 修回日期:2001-02-16 出版日期:2002-01-20 网络出版日期:2002-01-20

Dielectric Relaxation of Gd Doped PbWO₄ Single Crystal

HUANG Hong-Wei¹; DONG Ming²; YE Zuo-Guang²; FENG Xi-Qi¹

1. Laboratory of Functional Inorganic Material; Shanghai Institute of Ceramic; Chinese Academy of Sciences; Shanghai 200050; China; 2. Dept. of Chemistry; Simon Freaser University; Canada

Received:2001-01-09 Revised:2001-02-16 Published:2002-01-20 Online:2002-01-20

摘要/Abstract

摘要： 完成了钆离子（Ｇｄ^３＋）掺杂钨酸铅晶体在４０～６００℃、１～１０６Ｈｚ范围内介电性能的测量．在升温过程中观察的典型的介电弛豫峰，记为α峰，其激活能为０５０±０，０１ｅＶ，频率因子ｖ＝１．４４×１０^９．而在降温过程中，除α峰外还出现了另一介电弛豫峰，记为β峰，其激活能为０．５１±０．２ｅＶ，频率因子Ｖ＝２．４４×１０^６．α峰和 β 峰均可用Ｄｅｂｙｅ方程来描述，而其相对强度呈此消彼长的趋势．分析了Ｇｄ：ＰＷＯ中两种介电弛豫峰的起因及其相互关系，并讨论了它们与ＰＷＯ晶体闪烁性能变化之间的关系．

关键词: 介电弛豫, 掺Gd钨酸铅晶体, 偶极缺陷

Abstract: Dielectric responses of as-grown PbWO₄ single crystal doped with Gd³⁺ ion were measured. Experimental results show that typical dielectric relaxation
phenomena exist in the crystal. There is one Debye-type dielectric peak (α) in the heating cycle from 40℃ up to 600℃, while another peak (β) in the cooling cycle. Activation energies of the two peaks(α and β) are 0.50±0.01 eV and 0.51±0.02 eV, with a frequency factor 1.44×10⁹s^-1 and 2.44×10⁶s^-1 respectively. Both peaks can
be explained by the presence of dipole complexes formed by the doped Gd³⁺ ions coupled with Pb vacancies and interstitial oxysen respertively. The correlation between the dielectric and scintillation properties was discussed.

Key words: dielectric relaxation, Gd-doped PbWO4, dipole complexes

中图分类号:

O738

黄红伟,DONG Ming,YE Zuo-Guang,冯锡淇. 钆掺杂钨酸铅闪烁晶体的介电双弛豫峰研究[J]. 无机材料学报.

HUANG Hong-Wei,DONG Ming,YE Zuo-Guang,FENG Xi-Qi. Dielectric Relaxation of Gd Doped PbWO₄ Single Crystal[J]. Journal of Inorganic Materials.

[1]	张营堂, 闫欠. Ba(Zr_0.15Ti_0.85)O₃厚膜的介电与铁电性能研究[J]. 无机材料学报, 2016, 31(11): 1219-1222.
[2]	王超, 陈静, 陈红丽, 侯育冬, 朱满康. 纳米铌酸钾钠陶瓷的制备及性能[J]. 无机材料学报, 2015, 30(1): 59-64.
[3]	张倩, 丁士华, 宋天秀, 彭小松, 刘旭, 蒋旭峰. Sc³⁺和Ru⁴⁺联合取代BZN基陶瓷结构与介电性能的研究[J]. 无机材料学报, 2014, 29(11): 1145-1150.
[4]	李在映, 丁士华, 宋天秀. Na-Ni掺杂对Bi₂(Zn_1/3Nb_2/3)₂O₇陶瓷性能的影响[J]. 无机材料学报, 2010, 25(8): 825-828.
[5]	李新元,冯楚德,李承恩,鲍军. PMN铁电陶瓷B位有序与介电弛豫特性研究[J]. 无机材料学报, 1998, 13(6): 823-829.
[6]	樊慧庆,张良莹,姚熹. 铌酸锶钡铁电陶瓷的介电弛豫行为[J]. 无机材料学报, 1998, 13(3): 357-362.