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无机材料学报

• 研究论文 • 上一篇    

激光致溅射沉积Ge2Sb2Te5薄膜的结晶行为研究

刘波; 阮昊; 干福熹   

  1. 中国科学院上海光学精密机械研究所 上海 201800
  • 收稿日期:2001-04-26 修回日期:2001-06-17 出版日期:2002-05-20 网络出版日期:2002-05-20

Laser-induced Crystallization Behavior of the Sputtered Ge2Sb2Te5 Film

LIU Bo; RUAN Hao; GAN Fu-Xi   

  1. Shanghai Institute of Optics and Fine Mechanics; Chinese Academy of Sciences; Shanghai 201800; China
  • Received:2001-04-26 Revised:2001-06-17 Published:2002-05-20 Online:2002-05-20

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摘要： 利用ＸＲＤ研究了激光致溅射沉积Ｇｅ２Ｓｂ２Ｔｅ５薄膜的结晶行为;研究发现,与热致相变不同的是,激光致相变只发生从非晶态到ＦＣＣ晶态结构的转变,从ＦＣＣ到ＨＣＰ的结构转变不再发生,这有利于提高相变光盘的信噪比．Ｇｅ２Ｓｂ２Ｔｅ５薄膜的结晶程度受初始化功率和转速的影响．

关键词: Ge2Sb2Te5, 激光致相变, X射线衍射, 面心立方

Abstract: The crystallization behavior of sputtered Ge2Sb2Te5 films initialized by initializer unit was studied by using XRD. It is indicated that only the amorphous phase to FCC phase transformation occurs during laser annealing of the normal phase-change structure, which is benefit for raising the phase-change optical disc s signal-to-noise ratio. The phase transformation from FCC to HCP doesn t occur, which occurs during the heat-induced phase-change process. The initialization power and velocity affect the Ge2Sb2Te5 file's crystallization fraction.

Key words: Ge2Sb2Te5, laser-induced phase-change, XRD, FCC

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