低温一次烧结高介电常数晶界层电容器材料

无机材料学报

低温一次烧结高介电常数晶界层电容器材料

沈辉; 潘晓明; 宋元伟; 奚益明; 王评初

中国科学院上海硅酸盐研究所上海 200050

收稿日期:2001-05-17 修回日期:2001-06-29 出版日期:2002-05-20 网络出版日期:2002-05-20

Single-Fired SrTiO₃-Based GBBLC Material with Hign Permittivity

SHEN Hui; PAN Xiao-Ming; SONG Yuan-Wei; XI Yi-Ming; WANG Ping-Chu

Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China

Received:2001-05-17 Revised:2001-06-29 Published:2002-05-20 Online:2002-05-20

摘要/Abstract

摘要： 报道了一种在较低温度一次烧结制备的具有高介电常数、较低损耗和良好显微结构的晶界层电容器材料(简称ＧＢＢＬＣ)．材料的有效介电常数高达３７×１０^４,损耗可控制在４%,晶粒５μｍ左右,ΔＣ/Ｃ＜±３%(２０~１５０℃),频率色散较小,且制备工艺简单．

关键词: SrTiO₃, GBBL电容器

Abstract: A SrTiO₃-based GBBL capacitor material containing Nb₂O₅, Bi₂O₃·3TiO₂, LiF, single-fired below 1200℃, was prepared. Its dielectric properties and microstructure were investigated. The results show that ε_eff-37×10⁴, tgδ-4%, △C/C<±3%(20-150℃) , grain size d-5μm.

Key words: SrTiO₃, GBBL capacitor

中图分类号:

TM534

沈辉,潘晓明,宋元伟,奚益明,王评初. 低温一次烧结高介电常数晶界层电容器材料[J]. 无机材料学报.

SHEN Hui,PAN Xiao-Ming,SONG Yuan-Wei,XI Yi-Ming,WANG Ping-Chu. Single-Fired SrTiO₃-Based GBBLC Material with Hign Permittivity[J]. Journal of Inorganic Materials.

[1]	阎建辉,张丽,朱裔荣,唐有根,杨海华. NiO(CoO)/N-SrTiO₃异质结型复合光催化剂的制备及模拟太阳光催化产氢[J]. 无机材料学报, 2009, 24(4): 666-670.
[2]	朱裔荣,唐有根,阎建辉,刘强. 氮掺杂SrTiO₃的制备及其可见光催化产氢活性研究[J]. 无机材料学报, 2008, 23(3): 443-448.
[3]	张亦文,李效民,赵俊亮,于伟东,高相东,吴峰. 脉冲激光沉积法生长In掺杂SrTiO₃薄膜及其微观结构研究[J]. 无机材料学报, 2008, 23(3): 531-534.
[4]	王评初,贾惠良. 一种含钇的一次烧结SrTiO₃ GBBL电容器材料[J]. 无机材料学报, 1998, 13(6): 944-946.
[5]	缪卫国,吴音,周和平. Ca固溶对SrTiO₃结构的影响[J]. 无机材料学报, 1998, 13(1): 48-52.