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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

Cr2O3涂层对Al2O3绝缘瓷二次电子发射特性的影响

郑家贵1; 蒋立新2; 蔡亚平1; 罗四维2; 周心明1   

  1. 1. 四川大学材料科学系, 成都 610064; 2. 中国工程物理研究院应用电子研究所, 绵阳 621900
  • 收稿日期:2000-09-15 修回日期:2000-11-09 出版日期:2001-05-20 网络出版日期:2001-05-20

Secondary Electron Emission Characteristic of Insulated Al2O3 Ceramics with Cr2O3 Coating

ZHENG Jia-Gui1; JIANG Li-Xin2; CAI Ya-Ping1; LUO Shi-Wei2; ZHOU Xin-Ming 1   

  1. 1. Materials Science Department; Sichuan University; Chengdu 610064; China; 2. Institute of Applied Electronics; CAEP; Mianyang 621900; China
  • Received:2000-09-15 Revised:2000-11-09 Published:2001-05-20 Online:2001-05-20

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摘要： 用Ｃｒ２Ｏ３涂复ａ－Ａｌ２Ｏ３绝缘瓷表面，并经热退火处理．观测了它们的二次电子发射系数、ＳＥＭ、ＸＲＤ、ＸＰＳ和ＥＥＬＳ．发现样品在退火后，涂层元素扩散进了Ａｌ２Ｏ３陶瓷基底，生成了新相；根据ＸＰＳ和ＥＥＬＳ的分析结果，表面层能隙减小，能隙中的缺陷态、杂质态及表面态增加，提供了更多可能的复合中心和陷阱中心，有利于非平衡载流子的散射跃迁，从而大大耗散能量，减少二次电子发射．

关键词: Cr2O3涂层, α-Al2O3绝缘瓷, 二次电子发射特性

Abstract: Cr2O3 coatings were applied to α-Al2O3 insulators and followed by heat treatment in special
conditions. Secondary electron emission coefficient, SEM, XRD, XPS and EELS of the samples were measured and observed. During heat treatment, new phases
can be formed, because the coatings can penetrate the surfaces of the insulators and mix with α-Al2O3. The experimental results of XPS and EELS
show that due to the energy gaps of the surfaces decreasing, the densities of defect state, impurity state and surface state in the energy gaps increasing,
more recombination centers and trapping centers can be formed, and that is favorable for the transition of non-equilibrium carriers and leading the
deerease of secondaty electron emission.

Key words: Cr2O3 coating, α-Al2O3 insulator, secondary electron emission characteristic

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