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无机材料学报

无机材料学报

• 研究论文 • 上一篇    

ITO靶材在磁控溅射过程中的毒化现象

孔伟华   

  1. 西北稀有金属材料研究院宁夏特种材料重点实验室 宁夏 753000
  • 收稿日期:2001-08-13 修回日期:2001-09-30 出版日期:2002-09-20 网络出版日期:2002-09-20

Poisoning Phenomenon on the Surface of ITO Target During DC-Magnetron Sputtering Process

KONG Wei-Hua   

  1. Ningxia Special Materials Key Laboratory; Northwest Institute of Rare Metal Materials; Ningxia 753000; China
  • Received:2001-08-13 Revised:2001-09-30 Published:2002-09-20 Online:2002-09-20

PDF (PC)

13932

被引次数

26

摘要： 研究直流磁控反应溅射ITO膜过程中ITO靶材的毒化现象,用XRD、EPMA、LECO测氧仪等手段对毒化发生的机理进行分析,并对若干诱导因素进行讨论,研究表明ITO靶材毒化是由于In2O3。主相分解为In2O造成的,靶材性能及溅射工艺缺陷都可能诱导毒化发生.

关键词: 直流磁控反应溅射, ITO, 毒化现象

Abstract: The poisoning phenomenon on the surface of ITO target during DC-Magnetron sputtering process was investigated. XRD, EPMA and LECO oxygen analyzer were used to study the poisoning mechanism and the factors leading to poisoning were analyzed. The result shows that In2O3 is decomposed into In2O and O2. This reaction on the surface of ITO target is the reason causing the poisoning phenomenon.

Key words: DC-magnetron sputtering, ITO target, poisoning phenomenon

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