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无机材料学报

无机材料学报

• 研究论文 • 上一篇    

ITO薄膜的光电子能谱分析

陈猛; 裴志亮; 白雪冬; 黄荣芳; 闻立时   

  1. 中国科学院金属研究所, 沈阳 110015

  • 收稿日期:1999-02-11 修回日期:1999-05-24 出版日期:2000-02-20 网络出版日期:2000-02-20

X-ray Photoelectron Spectroscopy Studies of ITO Thin Films

CHEN Meng; PEI Zhi-Liang; BAI Xue-Dong; HUANG Rong-Fang; WEN Li-Shi   

  1. Institute of Metal Research; Chinese Academy of Sciences; Shenyang 110015; China

  • Received:1999-02-11 Revised:1999-05-24 Published:2000-02-20 Online:2000-02-20

PDF (PC)

840

被引次数

61

摘要：

运用ＸＰＳ分析了ＩＴＯ薄膜真空退火前后各元素化学状态的变化情况．研究表明，低温直流磁控反应溅射ＩＴＯ薄膜退火前后Ｓｎ和Ｉｎ处于各自相同的化学状态中．Ｏ以两种化合状态ＯＩ和ＯＩＩ存在，其结合能值分别为５２９．９０±０．３０ｅＶ和５３１．４０±０．２０ｅＶ，分别对应着氧充足和氧缺乏状态.两者面积之比ＲｏＩ／ｏＩＩ从薄膜表面到体内逐渐增大．退火后薄膜表面的ＲｏＩ／ｏＩＩ小于未退火薄膜表面的ＲｏＩ／ｏＩＩ;经Ａｒ＋刻蚀２０ｍｉｎ后，退火薄膜体内的ＲｏＩ／ｏＩＩ大于未退火薄膜体内的ＲｏＩ／ｏＩＩ．这些结果表明，ＩＴＯ薄膜中氧缺位状态主要分布在薄膜表层．

关键词: 化学状态, 光电子能谱, Gaussian拟合

Abstract: The chemical states of In, Sn and O in Sn-doped In2O3 films were investigated byusing X-ray photoelectron spectroscopy. The results indicate that Sn and In respectively exist ina same chemical state for both as-deposited and post-annealed films. Two types of O2- ions, OI and OII, can be distinguished by Gaussian simulation. OI has a binding energy of 529.90±0.30 eVwhich is in oxygen sufficient region, and OII has a binding energy of 531.40±0.2 eV which is inoxygen deficient regions. Oxygen deficient regions mainly exist in the surface layer.

Key words: chemical state, XPS, Gaussian simulation

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