采用传统固相反应法制备了锑掺杂的锆镧酸锂固体电解质陶瓷。对陶瓷的晶体结构、显微结构及元素分布、离子电导率进行了研究。结果表明: 少量锑掺杂可明显提高锆镧酸锂固体电解质陶瓷的离子电导率。1160℃烧结的锑掺杂固体电解质中, 晶粒表面形成无定型的薄膜。此薄膜抑制了晶粒生长, 消除了晶界上的气孔, 提高了陶瓷致密度, 提高了陶瓷的离子导电率。1160℃烧结得到的Li6.925La3Zr1.925Sb0.075O12陶瓷离子电导率高达3.40×10-4 S/cm。
The garnet-related oxides Li7-
Lithium ion batteries are considered to be the high performance power sources for portable devices, hybrid electric vehicles and promising energy storage devices for wind and solar energy. Currently, organic liquid electrolytes, which are subjected to many potential safety concerns, were used in commercialized lithium ion batteries[ 1, 2]. Inorganic solid electrolytes exhibit many advantages, such as absence of leakage and pollution, better thermal stability, larger electrochemical stability window, high resistances to shocks and vibrations[ 3]. Among all inorganic solid electrolytes, oxide ceramic electrolytes have gained much attention because of its better chemical stability and easier processes than those of hydrolysis sulfide-based electrolytes[ 4]. Recently, the metal oxides Li5La3M2O12(M = Nb, Ta) and Li7La3Zr2O12(abbreviated as LLZO) have gained much attention because of high total conductivity, excellent chemical, and electrochemical stability[ 5, 6]. However, the low ionic conductivity (two orders of magnitude lower than traditional liquid electrolyte) and the high sintering temperature (1200℃) hinder the wide application of this electrolyte. Doping has been proved as an effective and powerful strategy to increase the ion conductive performance. Partially substitution of Zr with Nb distinctly improved the ion conductive performance (0.8 mS/cm) of LLZO by increasing the concentration of carrier[ 7]. Small amount of Al and Si intentionally introduced by ball milling formed the amorphous Li-Al-Si-O thin film with nano crystalline LiAlSiO4 on grain boundaries. This special microstructure resulted in the improvement of the total Li+ conductivity of LLZO[ 8]. Small amount of Al incorporated into the ceramic by a polymerized complex (Pechini) method formed a liquid phase, which accelerated the sintering and stabilized cubic phase of Li7La3Zr2O12 with the higher conductivity[ 9]. High ionic conductivity (0.87 mS/cm) has been achieved in Ta doped LLZO ceramics prepared by hot press sintering method (1050℃-40 MPa-1 h)[ 10]. Besides, small amount of Ge and Y doping helped to increase the bulk conductivity and total conductivity[ 11, 12]. Although the ionic conductivity of LLZO has been enhanced, the high sintering temperature (1200℃) has caused abnormally large grain and pores trapped in large grain, which will introduce huge stress into ceramic and decrease its mechanical strength[ 13]. The sintering temperature could be greatly decreased to 1150℃ by hot press sintering[ 10]. However, the high cost and complicated process limit its application. Therefore, it is imperative to explore new doping or sintering agent to realize the low temperature sintering and fine grain structure.
As a typical sintering aid, the introduction of Sb2O5 (melting point 380℃) into LLZO may decrease the sintering temperature of modified LLZO. Partial substitution of Sb for Nb and/or Ta in lead free piezoelectric notably improved its electromechanical properties and decreased the sintering temperature[ 14, 15]. Very recently, the antimony substituted lithium garnets Li7- xLa3Zr2- xSb xO12 ( x = 0.2, 0.4, 0.6, 0.8 and 1.0) were successfully synthesized by conventional solid state method. Results showed that the substitution of Zr4+ by Sb5+ form limited solid solution with cubic symmetry. Li6.6La3Zr1.6Sb0.4O12 exhibited a maximum total ionic conductivity of 7.7×10-4 S/cm at 30℃. There was a non-Debye relaxation process in this system. Raman studies revealed an increase in the Li+ occupancy on the tetrahedrally coordinated site[ 16]. However, no much attention has been focused on the effect of microstructure on the ionic conductivity. In present work, Sb doped LLZO was prepared and its microstructure and ionic conductivity were investigated.
La2O3(99.99%), Li2CO3(99%), ZrO2(99%) and Sb2O5(99%) were used as raw materials. 10% excess Li2CO3 was added to compensate the loss of lithium during sintering. La2O3 powder has been pre-fired at 900℃ for 2 h. The mixed powder was heated to 850℃ for 6 h to synthesize the LLZO powder. Secondary mixture and reaction have been employed to ensure the complete reaction of raw materials. The disks were sintered at 1160℃ and 1230 ℃ for 6 h.
X-ray diffraction (XRD) measurements (D8 Advance, Bruker, Germany) were carried out to examine the crystalline phase of the as-prepared sample. The ionic conductivities of samples were measured from -60℃ to 60℃ with a concept 50 broadband dielectric spectrometer (Novocontrol technologies, Germany). The microstructure of ceramics was characterized by scanning electron microscopy (S-3400N, Hitachi, Japan) equipped with energy dispersive X-ray detector (EMAX7021, Horiba, Japan).
Figure 1 shows XRD patterns of the LLZO and Sb-doped LLZOsintered pellets. Unlike literature[16], all of the diffraction peaks can be assigned to a cubic lithium garnet-like structure[ 17]. Lattice parameter of the Sb-doped LLZO (1.29538 nm) is slightly smaller than that of pure LLZO (1.29544 nm), since the effective ionic radius of Sb5+ (0.060 nm) with 6 coordination is smaller than that of Zr4+ (0.072 nm) and the evaporation of lithium at elevated temperature[ 16]. The change of the lattice parameter indicates that the strain has been introduced by partial substitution of Zr by Sb.
Figure 2 shows SEM results of the LLZO and Sb-doped LLZO ceramics. The microstructure of LLZOis inhomogeneous. The grain size of LLZO varies from ~10 μm to ~ 100 μm. Many pores are observed in the large grain and on the grain boundary as results of abnormal grain growth (Fig. 2(a)). Innergranular fracture has been observed for the LLZO ceramic. Small amount of Sb substitution for Zr distinctly decreases the grain size and makes the ceramic section change from innergranular fracture to intergranular fracture. The largest grain decreases to ~30 μm (Fig. 2(b)). More homogeneous grain size in Sb-doped LLZO could be ascribed to the lower sintering temperature (1160℃) than that of LLZO (1230℃). Different from the clean and smooth grain surface of LLZO, a rugged thin film is observed on the surface of grains in Sb-doped LLZO (Fig. 2(d)). The thickness of this thin film is about 700 nm (Fig. 2(e)). Main elements in the thin film are La, Zr, Al and O. Considering that the Li is beyond the detection limit of common energy spectrum and Al is introduced by the alumina crucible during the sintering, the thin film should be the Li-La-Zr-Al-O layer. Sb mainly distributes in the grain (Fig. 2(f)), which is consistent with the XRD analysis (Fig. 1). As seen from Fig. 2(f), more Al has been observed in grain than that in the thin film. It is proposed that lithium vacancy formed by Sb substitution for Zr increases the solubility of Al in the grain. This Li-La-Zr-Al-O thin film decreases pores in and between grains, makes the grain boundary denser than that of pure LLZO, and suppresses the abnormal growth of grains. Similar amorphous thin film has been reported in Li0.5La0.5TiO3/Si perovskite ceramic[ 18] and Al-Si co-doped LLZO[ 8]. In contrast with the extra thin amorphous film[ 8, 18], the thickness of the amorphous film formed in Sb-doped LLZO is about 700 nm. The effect of amorphous thin film should be intensified in Sb-doped LLZO ceramic sintered at the lower temperature.
AC impedance plots of pure LLZO and Sb-doped LLZO samples measured at 30℃ are shown in Fig. 3. The impedance of LLZO sintered at 1230℃ for 6 h is typical for ionic conductor. The conductivities of the bulk, grain-boundary and total conductivities are σb=1.81×10-4S/cm, σgb=3.57×10-4 S/cm and σtotal=1.19×10-4 S/cm, respectively. However, Sb-doped LLZO sintered at the same condition shows lower ionic conductivity, which indicates that partial substitution of Sb for Zr has profound influence on the ionic conductive behavior of LLZO. The strain introduced by ion substitution (as in Fig. 1) could activate the crystal lattice and decrease the sintering temperature. When the sintering temperature is lowered to 1160 ℃, the bulk, grain-boundary and total conductivities are enhanced to 3.83×10-4, 3.02×10-3 and 3.40×10-4 S/cm, respectively. Many factors affect the bulk ionic conductivity of lithium conductor. One possible reason is that Sb5+ partially substituting Zr4+ increases the lithium vacancy concentration in the lattice, which strengthens the mobility of Li ion under electric field[ 16, 19]. More amount of Li evaporated at higher temperature, and more Li vacancy occurred, which might increase the ionic conductivity. However, there should be an optimum amount of Li vacancy ( CLi)[ 20]. At CLi, the lattice conductivity should be maximum. In fact, the bulk and total ionic conductivity is higher at 1160 ℃ (Fig. 3). In Sb-doped LLZO sample, additional Li vacancy has been introduced except for those formed during sintering. The concentration of amount of Li vacancy in Sb doped LLZO sintered at 1230℃ exceeds the optimum Li vacancy ( CLi), which decreases the lattice conductivity. However, the concentration of Li vacancy in Sb-doped LLZO sintered at 1160℃ might be closer to CLi than those of LLZO and Sb doped LLZO sintered at 1230℃. Therefore, the lattice conductivity is enhanced by 110%. It should be stressed that the grain-boundary conductivity has been enhanced about 740%. As seen from Fig. 2(d), an amorphous thin film has been introduced by Sb substitution, which suppressed the abnormal growth of grain and resulted in a dense grain boundary. Decrease of pores in the grains and on the grain boundary shortens the length of diffusion pathway[ 19]. On the other hand, the amorphous phase on the grain boundaries decreases the mismatch between grains with random orientations[ 20]. Intensified effects mentioned above of amorphous thin film sharply increase the grain boundary conductivity and make total ionic conductivity of Sb-doped LLZO comparable with those sintered at higher temperature (>1200 ℃)[ 7, 8, 9, 11, 12], but with finer grains.
For examining the effect of the amorphous Li-La-Zr-Al-O thin film on the ionic conductivity, the comparison of the lithium ion conductivity between pure LLZO sintered at 1230℃and Sb-doped LLZO sintered at 1160℃ in the temperature from -60℃ to 60℃ is shown in Fig. 4(a). The bulk and total conductivities are calculated separately.
Obviously, the bulk and total conductivities of Sb-doped LLZO are higher than those of pure LLZO. Because the bulk and grain boundary contribute to the total ionic conductivity, the difference between the bulk and total conductivities reflects the grain boundary effect. The smaller difference of Sb-doped LLZO in Fig. 4(a) indicates that the grain boundary resistance is notably decreased by the amorphous thin film. On the other hand, the activation energies of pure LLZO and Sb-doped LLZO were estimated according to the Arrhenius equation[ 6]. The total activation energies of pure LLZO and Sb-doped LLZO are 0.41 eV and 0.37 eV, respectively. The bulk activation energies seem not to be affected by Sb doping. The activation energy for the total lithium ion conductivity of Sb-doped LLZO is lower than Li6La3ZrTaO12 (0.42 eV)[ 21], Li6BaLa2Ta2O12 (0.40 eV)[ 22]. The lower total activation energy in Sb-doped LLZO might be attributed to the existence of the amorphous thin film.
The garnet-related oxides Li7La3Zr2O12 and Li6.925La3Zr1.925Sb0.075O12 ceramics with cubic structure were prepared by solid-state reaction. The bulk, grain boundary and total conductivities of Sb-doped LLZO are simultaneously enhanced. The enhancement of ionic conductivity may be mainly ascribed to the denser and modified microstructure as the result of the amorphous Li-La-Zr-Al-O thin film. It is this thin film that sharply improves the ionic conductivity of the grain boundary. The ionic conductivity of Li6.925La3Zr1.925Sb0.075O12 ceramic sintered at 1160℃ for 6 h, achieves to 3.40×10-4 S/cm, which makes it a promising electrolyte for all solid state lithium battery.