为了提高陶瓷基复合材料的抗氧化性能,分别采用气相、液相渗硅工艺制备了ZrB2-SiC涂层,利用静态氧化试验测试了ZrB2-SiC涂层的抗氧化性能,并分析了涂层的微观结构演化过程。结果表明:气相渗硅工艺制备的涂层抗氧化性能更优良,氧化试验后在涂层表面形成一层致密结构的氧化物层,有效抑制氧化性气体向涂层内部扩散,提高涂层的高温抗氧化防护能力。由于液相渗硅工艺制备的涂层存在残留硅成分和微裂纹,导致涂层高温抗氧化防护能力较差。
Novel zirconium diboride-silicon carbide (ZrB2-SiC) coatings were prepared by vapor silicon infiltration (VSI) and liquid silicon infiltration (LSI), respectively. The static oxidation resistance properties of these coatings were evaluated and their microstructure evolution during oxidation was studied. It showed that the VSI coating had better oxidation resistance than LSI. A compact oxide scale was formed on the VSI coating, which strongly suppressed further oxidation damage during the testing. The poor oxidation resistance of the LSI coating could be mainly attributed to micro-cracks and residual silicon.
With excellent thermal conductivity, high strength, non-brittle fracture behavior and low density, carbon fiber reinforced composites, such as C/C, C/SiC, are by far the most potential materials for high temperature structural applications in different fields[ 1, 2, 3, 4, 5]. However, the poor oxidation resistance of carbon fiber reinforcements poses a serious drawback to the application of the materials[ 6, 7]. As a result, carbon fiber reinforced composites show a low durability in oxidizing environments. To improve their oxidation resistance, much effort has been made. Current attempts to solve the oxidation problem of carbon fiber composites are usually resolved on surface protection with oxidation resistant coatings[ 8, 9, 10, 11].
Ultra high temperature ceramics (UHTCs) are materials of choices for ultra high temperature structural applications, such as the aerospace area. Many researches show that UHTCs coating is a promising approach to improve the oxidation resistance of carbon fiber composites. Among various UHTCs, ZrB2has attracted much attention due to its exceptional properties, such as high melting temperature, high thermal conductivity and chemical stability. Furthermore, the addition of SiC to ZrB2 has shown more effective improvement on the oxidation resistance properties of the material in comparison with monolithic ZrB2, because of the borosilicate layer formed through the interaction between oxidation products of ZrB2 and SiC[ 12, 13, 14].
There are many ways to fabricate ZrB2-SiC coating, including Plasma Spraying, Chemical Vapor Deposition (CVD) and Pack Cementation. ZrB2-SiC coating could be efficiently produced through plasma spraying. However, this needs high cost equipments and the coating property is greatly influenced by the starting powder characteristics[ 15]. CVD is most frequently used for coating preparation. It gives the best results in terms of coating density and coating design. Nevertheless, the technical difficulty for ZrB2 deposition has restricted its progress, and few reports about it could be found. As for Pack Cementation method, it demands CVD for further densification of the ZrB2-SiC coating when polycarbosilane is used as SiC precursor. While if SiC powder is used, it has to be carried out at above 1800℃, which causes serious carbon fiber properties attenuation[ 16, 17].
Recently, we have developed a novel method for ZrB2-SiC coating fabrication, namely, vapor silicon infiltration, by which dense ZrB2-SiC coating could be prepared. Also, the low cost of this method makes it attractive in cost sensitive fields. The purpose of present work was to evaluate the oxidation resistance properties and microstructures evolution of ZrB2-SiC coating prepared through VSI. For comparison, the ZrB2-SiC coating prepared through LSI were also evaluated.
ZrB2powders (~10 μm, >90wt% pure, Dandong Chemical Co., Ltd., Dandong, China) and phenolic resin (Shanghai Qinan Adhesive Material Factory, China) were mixed in alcohol through ball-milling to form a slurry for later use. C/SiC composites were chosen as the carbon fiber composites matrix. The C/SiC composites with a dimension of 5 mm×5 mm×20 mm were chamfered with no further machining, and the pre-coating was prepared by slurry-dipping method.
After dipped in the above slurry and dried, the slurry coated composite was cured at 100-150℃ for 1-3 h. Then, it was pyrolyzed in argon atmosphere at 1000℃ for 30 min at a heating rate of 5℃/min to convert the phenolic resin into carbon. In order to ensure the pre-coating thicknesses, several repetition of slurry dipping and pyrolysis process may be performed until the expected thickness was reached.
C/SiC composites covered with the pre-coating were placed in a graphite crucible containing some silicon powder at the bottom. For VSI coating, the specimens and the silicon powders should be separated appropriately. Then the crucible was heated in a vacuum furnace to 1600℃ at 5℃/min and dwelled for 30 min. Gaseous silicon would diffuse into the pre-coating and react with carbon to form SiC at 1600℃.
For LSI coating, the specimens bottom contacted with silicon bed were placed in another graphite crucible. Similarly, the crucible was heated in a vacuum furnace to 1500℃ at the same heating rate for the same dwell time as the VSI process. The liquid silicon would infiltrate into the pre-coating by the capillary force and react to form SiC at 1500℃.
The oxidation resistance of the ZrB2-SiC coating was evaluated by static oxidation in air at 1500℃ using a muffle furnace. After each oxidation test, the specimens were weighed on an electrical balance with an accuracy of 0.1 mg. The composition variation was analyzed by X-ray diffraction (Model D/max 2550 V, Rigaku, Japan) with Cu-Kα source. The microstructure evolution was observed by electron probe micro-analyzer (EPMA, JXA-8100, JEOL, Tokyo, Japan) equipped with energy dispersive spectrum (EDS, INCA, Oxford, Tokyo, Japan).
Figure 1 shows the microstructure of pre-coating after pyrolyzed at 1000℃. The pre-coating shows a high integrity without obvious cracks despite of the high volume shrinkage associated with phenolic resin decomposition and the release of gas byproducts during the pyrolysis process. Generally, the microstructure of the pre-coating is relatively loose with many pores. Such a microstructure is beneficial for further liquid silicon infiltration and gaseous silicon diffusion. It only can be seen diffraction peaks of ZrB2 phase from XRD pattern of the pre-coating, which indicates that the carbon derived from the pyrolysis of phenolic resin is in an amorphous state (Fig. 2(a)).
Figure 3 shows the microstructure of the polished cross sections of the as-fabricated VSI coating. As can be observed from Fig. 3(a), the coating has become dense and is mainly composed of two phases. The bright phase should be ZrB2, while the continuous dark phase should be as-formed SiC, according to its XRD pattern (Fig. 2(b)). These two phases intimately connect with each other and no cracks can be found in the coating. The thickness of the coating is about 160 μm. The phase distribution of coating surface is very similar to that of coating inside, although the coating surface is rough (Fig. 3(b)).
Different from the VSI coating, a large amount of residual silicon is found in the LSI coating (Fig. 2(c)). A comparison between the cross section and surface SEM images of LSI coating finds that the population of ZrB2 particle in the coating inside is much higher, while few ZrB2 particles can be observed on the coating surface (Fig. 4). This means that the residual silicon may mostly exist in the surface region of the coating. In addition to residual silicon, cracks are found in the LSI coating, and the particle size of ZrB2 in it is also much larger than that in the VSI coating, although the fabrication temperature of the former coating is much lower. The reasons for such differences in the microstructures between these two coatings can possibly be analyzed as follows.
During LSI coating fabrication, the molten silicon migrates upward along the pre-coating by means of strong capillary diffusion or reactive surface tension motion associated with surface diffusion[ 8], then reacts with carbon to form SiC. The strong exothermic effect associated with the reaction leads to local overheating, which drives the reaction to proceeds in such a violent way that stress induced cracking occurs in the coating, while the surplus silicon is left over on the coating surface. Furthermore, the infiltration of liquid silicon into the pre-coating may also enhance the coalescence of ZrB2. This, together with the local overheating, leads to a rapid growth of ZrB2 particles. Hereby, cracked LSI coating with relatively large ZrB2 particles and residual silicon on surface is obtained. As to the VSI coating, the things are quite different. Since the silicon vapor pressure at 1600℃ is low (<100 Pa), SiC formation reaction proceeds slowly during the VSI process. The local overheating effect in the coating, if it exists, is weak. This not only prevents the formation of intensive stress and cracks in the coating, but also prevents the rapid growth of ZrB2 particles. Under suitable conditions, crack free VSI coating with small ZrB2 particles and almost no residual silicon can be fabricated.
When the LSI and VSI coatings are oxidized in air at 1500℃ for 64 h, the following reactions will occur:
(1) |
(2) |
(3) |
(4) |
The oxidation reactions of ZrB2 and SiC will result in weight gain, while the evaporation of B2O3 will cause weight loss. As the mass gain is much larger than the weight loss, a net weight gain is expected.
The weight changes of C/SiC composites with LSI and VSI coating after exposure in air at 1500℃ are shown in Fig. 5. It is evident that both samples show weight gain during the whole oxidation process up to 64 h. This is in good agreement with the expectation. However, a great fluctuation in the weight gain of the composite with LSI coating is observed. This sample shows a maximum weight gain of 2.34wt% after oxidation for 16 h, then the weight gain declines with the prolongation of oxidation time. When the oxidation time is prolonged to 64 h, the weight gain decreases to 0.5wt%. In contrast, the composite with VSI coating exhibits much more superior oxidation resistance. This sample shows a weight gain of 0.6wt% after oxidation for 2 h because of surface oxidation, then the weight gain increase slowly with the increase in oxidation time. Nevertheless, its total weight gain is no more than 1wt% after 64 h oxidation.
Figure 6 shows the SEM images of the VSI and LSI coating after the oxidation test. For both samples, a surface scale resulting from the coating oxidation is observed. XRD analysis indicates the existence of ZrSiO4 and ZrO2 crystalline phases in the surface scale, which are the oxidation products of SiC and ZrB2 (Fig. 2(c) and (d)). For the VSI coating, residual ZrB2 is also found in the surface scale. The oxidation scale on the VSI coating surface is rather compact without obvious cracking. This can effectively restrict the oxygen inward diffusion, resulting in the superior oxidation resistance of this sample. Elements line scanning result indicates that the oxide scale on the coating surface is rather thin, and oxidation only occurs in the outmost part of the VSI coating (Fig. 6(a)).
In comparison, the microstructure of the oxidized LSI coating is quite different. A rather thick SiO2 rich layer with cracks is formed on the LSI coating surface. This layer mainly arises from the oxidation of residual silicon and contributes to the large weight gain at the initial stage of the oxidation process. What’s more, the cracks in the original coating together with the cracks in the SiO2 rich layer act as high speed channels for oxygen inward diffusion. Hereby, oxidation reactions can easily take place not only in the coating surface but in its interior as well, which causes a significant deterioration in the oxidation resistance of the coating. The interior oxidation of the LSI coating can be readily deduced from the result of elements line scanning shown in Fig. 6(c).
The ZrB2-SiC coatings were successfully prepared by VSI and LSI method, respectively. The VSI coating exhibits dense and homogenous microstructure with good oxidation resistance property. However, micro-cracks and residual silicon exist in the LSI coating, which results in significant deterioration in its oxidation resistance property. After oxidation at 1500℃ for 64 h, a compact oxide scale is formed on the VSI coating surface, which protects the coating interior from further oxidation, and oxidation only occurs in the outmost part of the coating. In comparison, both surface and interior oxidation occurs in the LSI coating because of the formation of cracks in it.