Electrical Behavior of Nb-doped Bi4Ti3O12 Layer-structured Ferroelectric Ceramics

Abstract

Abstract: Nb⁵⁺-doped Bi₄Ti₃O₁₂ layer-structured ferroelectric ceramics were prepared by the solid-state reaction technology. Microstructures of Bi₄Ti₃-_xNb_xO_12+x/2 materials were characterized by XRD and SEM. The results show that Bi₄Ti₃-_xNb_xO_12+x/2 material has a single orthorhombic structure. The grains of polished and thermally etched surfaces reveal a needle-like structure. Electronic conductor mechanism of Bi4Ti_3-xNb_xO_12+x/2 was analyzed by the Arrhe-nius fit of direct current conductivity vs temperature. Dielect constants of Bi₄Ti_3-xNb_xO_12+x/2 ceramics increase by Nb⁵⁺ doping. The Curie temperatures decrease linearly with the increase of Nb⁵⁺ concedntration. DSC results show that Bi₄Ti_3-xNb_xO_12+x/2 materials undergo the firstorder ferroelectric phase transition at the Curie point. Nb⁵⁺ doping Bi₄Ti₃O₁₂ ceramics results in an increase remanent polarizatgion (P_r) according to ferroelectric test results. The reason is that Nb⁵⁺ substituting for Ti⁴⁺ decreases the concentration of oxygen vacancies. The effect of oxygen vacancies on domain pinning is reduced significantly.

Key words: electrical conductivity, activation energy, ferroelectric properties, Bi₄Ti₃O₁₂

CLC Number:

TM282

ZHANG Li-Na,LI Guo-Rong,ZHAO Su-Chuan,ZHENG Liao-Ying,YIN Qing-Rui. Electrical Behavior of Nb-doped Bi₄Ti₃O₁₂ Layer-structured Ferroelectric Ceramics[J]. Journal of Inorganic Materials.

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Electrical Behavior of Nb-doped Bi₄Ti₃O₁₂ Layer-structured Ferroelectric Ceramics

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