Influence of Ce 3+ Substitution on the Structure and Electrical Characteristics of Bismuth-layer Na0.5Bi8.5Ti7O27 Ceramics

doi:10.15541/jim20180550

Abstract

Abstract:

The structure and electrical properties of Ce ³⁺-doped intergrowth bismuth layer-structured piezoelectric ceramics Na_0.5Bi_8.5-_xCe_xTi₇O₂₇(NBT-BIT-xCe, 0≤x≤0.1) prepared by conventional solid-state reaction process were systematically studied. In this study, all the ceramic samples were found to possess a single bismuth layer structure, and with the increase of x content, there is an increasing trend towards the lattice distortion of the sample, while the average grain size decreased. As demonstrated by dielectric spectrum and DSC method, two dielectric anomalies of the samples occur, which corresponds to ferroelectric phase transitions of the ceramics. And Ce ³⁺doping significantly reduces concentration of oxygen vacancy and dielectric loss in materials, improving piezoelectric constant (d₃₃) of ceramic samples. The resultant ceramics with x=0.06 reached the optimal performance, possessing a d₃₃ up to 27.5 pC/N with the Curie temperature of 658.2 ℃ and tanδ=0.39%.

Key words: piezoelectric ceramics, Na_0.5Bi_8.5Ti₇O₂₇, oxygen vacancy, activation energy

CLC Number:

TQ174

HU Hao, JIANG Xiang-Ping, CHEN Chao, NIE Xin, HUANG Xiao-Kun, SU Chun-Yang. Influence of Ce ³⁺ Substitution on the Structure and Electrical Characteristics of Bismuth-layer Na_0.5Bi_8.5Ti₇O₂₇ Ceramics[J]. Journal of Inorganic Materials, 2019, 34(9): 997-1003.

Figures/Tables 11

Fig. 1 XRD patterns of NBT-BIT-xCe ceramics

Fig. 2 Raman spectra of NBT-BIT-xCe ceramics

Fig. 3 Rietveld refinements for NBT-BIT ceramics

Table 1 Lattice parameters of NBT-BIT-xCe ceramics

Compound	a/nm	b/nm	c/nm	V/nm³	Orthorhombicity
NBT-BIT	0.5421138	0.5449559	7.3766121	2.179259	0.005230
NBT-BIT-0.04Ce	0.5422069	0.5450802	7.3880188	2.183502	0.005290
NBT-BIT-0.06Ce	0.5420991	0.5451425	7.3788872	2.180618	0.005600
NBT-BIT-0.07Ce	0.5420621	0.5451272	7.3959427	2.185448	0.005640
NBT-BIT-0.08Ce	0.5425093	0.5456971	7.3701042	2.181888	0.005858
NBT-BIT-0.10Ce	0.5421451	0.5453683	7.3819908	2.182624	0.005930

Fig. 4 (a) Diagram of OH adsorption on ceramic surface: (i) surface M-OH; (ii) M-OH formed from broken M-O; (iii) Vo-OH formed from surface oxygen vacancies; (b) high resolution O1s XPS spectra of NBT-BIT ceramics

Table 2 Parameters of OV and OL peaks in XPS curves

Sample	O_V	O_L	O_V/O_L
NBT-BIT	76.10	23.90	3.18
NBT-BIT-0.06Ce	53.47	46.53	1.15

Fig. 5 SEM images and grain size distribution for NBT-BIT-xCe ceramic samples (a) x=0.00; (b) x=0.04; (c) x=0.06; (d) x=0.08; (e) x=0.10

Fig. 6 DSC spectra of NBT-BIT ceramic powder

Fig. 7 The curves of dielectric constant and dielectric loss varied with temperature for NBT-BIT-xCe ceramic samples at 100 kHz

Fig. 8 Complex impedance plots of NBT-BIT-xCe ceramics at different temperatures (a) x=0.00; (b) x=0.04; (c) x=0.06; (d) x=0.07; (e) x=0.08; (f) x=0.10

Fig. 9 The curves of piezoelectric constant and activation energy varied with x for NBT-BIT-xCe ceramic

References 34

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Influence of Ce ³⁺ Substitution on the Structure and Electrical Characteristics of Bismuth-layer Na_0.5Bi_8.5Ti₇O₂₇ Ceramics

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