Liquid-assisted Hot-pressed Sintering of Cu(In, Ga)Se2 Targets

doi:10.15541/jim20160186

Abstract

Abstract:

CIGS target was prepared by one step hot-pressing sintering using CuIn_0.7Ga_0.3Se₂, In_0.7Ga_0.3Se and CuSe as precursor powder. Archimedes method, XRD, Raman, SEM, and EDS were carried out to investigate the effects of liquid-assisted sintering on the relative density, phase, structure, morphology, and composition of CIGS target. The results showed that CuSe would turn into liquid phase when temperature was increased to the liquid phase points. The liquid phase can significantly reduce sintering temperature (about 50℃ dropping) and accelerate the sintering process. When sintered at 575℃, the target can obtain the relative density of 96.18%, single phase, dense microstructure with good grain growth. In addition, using the target with molar ratio of Cu : In : Ga : Se =23.0 : 18.2 : 6.5 : 52.3, CIGS thin films were also prepared by sputtering-heat treatment, followed assembled into AZO/ZnO/CdS/CIGS/Mo solar cell. The fabricated CIGS solar cells presented a photoelectric conversion efficiency of 9.6%.

Key words: CIGS, hot-pressing sintering, target, conversion efficiency

CLC Number:

TN304

HUANG Yao-Qin, ZHENG Guo-Yuan, MO Shu-Yi, HE Li-Qiu, WANG Dong-Sheng, LONG Fei. Liquid-assisted Hot-pressed Sintering of Cu(In, Ga)Se₂ Targets[J]. Journal of Inorganic Materials, 2016, 31(10): 1141-1146.

Figures/Tables 8

Fig. 1 XRD patterns of targets sintered at different temperatures from formula A and B powders

Fig. 2 FWHM of main diffraction peak of targets sintered at different temperatures from formula A and B powders

Fig. 3 Raman spectra of the targets sintered at different temperatures from formula A and B powders

Fig. 4 Relative density of targets sintered at different temperatures

Fig. 5 Cross-sectional FESEM images of CIGS targets sintered at different temperatures from different formula powders (a) Formula A, T=600℃; (b) Formula A, T=625℃; (c) Formula B, T=550℃; (d) Formula B, T=575℃

Fig. 6 Principle diagram of the crystal growth in liquid-assisted sintering

Table 1 Composition proportion and loss on ignition table of targets by different formula

Sample	Additive CuSe	Temperature /℃	Cu / at%	In / at%	Ga /at%	Se / at%	Loss on ignition / %
Raw material	No	--	24.98	17.52	7.49	50.01	--
a	No	550	25.18	17.44	7.49	49.89	3.11
b	No	575	24.96	17.41	7.56	50.07	3.44
c	No	600	25.22	17.43	7.39	49.96	3.75
d	No	625	25.19	17.49	7.59	49.73	3.88
Raw material	Yes	--	25.02	17.49	7.47	50.02	--
e	Yes	525	24.98	17.46	7.48	50.08	0.49
f	Yes	550	24.89	17.42	7.45	50.24	0.59
g	Yes	575	25.04	17.52	7.55	49.89	0.67
h	Yes	600	25.12	17.48	7.52	49.88	0.74
i	Yes	625	24.78	17.38	7.45	50.39	0.83

Fig. 7 XRD pattern(a), Raman pattern(b) and plan view (c) of CIGS thin film preparation by sputtering-heat treatment, and its I-V pattern(d) and cross-sectional view (e) FESEM image of a single battery

References 19

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Liquid-assisted Hot-pressed Sintering of Cu(In, Ga)Se₂ Targets

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