Abstract: Ge-Sb-Te and Ge-Sb-Te-O thin films were prepared by RF-sputtering. XRD spectra of the films in
as-deposited and heat-treated states show that the films changed from amorphous to crystalline states due to heat-treatment. By using DSC data
of the amorphous film materials, measuring the peak temperature of crystallization at different heating rates, the activation energies
and frequency factors were calculated. The experimental results show that sample Ge-Sb-Te-O has a higher value of activation energy than sample Ge-Sb-Te, so
oxygen-doping can improve the crystallization rate of Ge-Sb-Te phase-change material.

Key words: Ge-Sb-Te phase-change films, oxygen-doping, XRD, DSC, crystallization kinetics