Journal of Inorganic Materials ›› 2016, Vol. 31 ›› Issue (9): 997-1003.DOI: 10.15541/jim20160060
Special Issue: 庆祝上海硅酸盐所独立建所60周年虚拟专刊!
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YANG Xiao-Yan1, 3, WU Jie-Hua2, REN Du-Di2, ZHANG Tian-Song2, CHEN Li-Dong1
Received:
2016-01-27
Published:
2016-09-20
Online:
2016-08-29
About author:
YANG Xiao-Yan(1988–), female, candidate of PhD. E-mail: yangxy116@student.sic.ac.cn
Supported by:
CLC Number:
YANG Xiao-Yan, WU Jie-Hua, REN Du-Di, ZHANG Tian-Song, CHEN Li-Dong. Microstructure and Thermoelectric Properties of p-type Si80Ge20B0.6-SiC Nanocomposite[J]. Journal of Inorganic Materials, 2016, 31(9): 997-1003.
Fig. 1 Powder XRD patterns of Si80Ge20B0.6 matrix, Si80Ge20B0.6 BM and Si80Ge20B0.6 + 0.5vol% SiC BM samples before SPS. The inset in the upper right depicts XRD pattern of Si80Ge20B0.6 + 0.5vol% SiC BM sample sintered by SPS
Fig. 4 TEM images and EDS results of Si80Ge20B0.6 + 0.5vol% SiC BM sample(a) TEM image of the composite containing nano-SiC; (b) EDS of the region at areas I and II in (a); (c) High magnification of the sub-region in (a); (d) HRTEM image of the interface between Si80Ge20B0.6 matrix and nano-SiC particle; (e, f) HRTEM images of Si80Ge20B0.6 matrix and nano-SiC particle, respectively; (g, h) Fourier transfer diffraction patterns of (e) and (f), respectively
Fig. 5 Temperature dependence of (a) electrical conductivity, (b) Seebeck coefficient, (c) power factor and (d) carrier concentration for Si80Ge20B0.6 matrix, Si80Ge20B0.6 BM and Si80Ge20B0.6 + xvol% SiC BM (x = 0.3, 0.5, 1.0) samples
Sample | Carrier concentration/ (×1020, cm-3) | Carrier mobility/ (cm2·V-1·s-1) |
---|---|---|
Si80Ge20B0.6 matrix | 3.4 | 36 |
Si80Ge20B0.6 BM | 1.4 | 30 |
Si80Ge20B0.6 + 0.3vol% SiC BM | 1.3 | 28 |
Si80Ge20B0.6 + 0.5vol% SiC BM | 1.3 | 26 |
Si80Ge20B0.6 + 1.0vol% SiC BM | 1.4 | 23 |
Table 1 Room temperature carrier concentration and mobility for Si80Ge20B0.6 matrix, Si80Ge20B0.6 BM and Si80Ge20B0.6 + xvol% SiC BM (x = 0.3, 0.5, 1.0) samples
Sample | Carrier concentration/ (×1020, cm-3) | Carrier mobility/ (cm2·V-1·s-1) |
---|---|---|
Si80Ge20B0.6 matrix | 3.4 | 36 |
Si80Ge20B0.6 BM | 1.4 | 30 |
Si80Ge20B0.6 + 0.3vol% SiC BM | 1.3 | 28 |
Si80Ge20B0.6 + 0.5vol% SiC BM | 1.3 | 26 |
Si80Ge20B0.6 + 1.0vol% SiC BM | 1.4 | 23 |
Fig. 6 Temperature dependence of (a) thermal conductivity and (b) lattice thermal conductivity for Si80Ge20B0.6 matrix, Si80Ge20B0.6 BM and Si80Ge20B0.6 + xvol% SiC BM (x = 0.3, 0.5, 1.0) samples
Fig. 7 Temperature dependence of ZT values for RTG p-type Si80Ge20 alloy[3], Si80Ge20B0.6 matrix, Si80Ge20B0.6 BM and Si80Ge20B0.6 + xvol% SiC BM (x = 0.3, 0.5, 1.0) samples
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