Wide Bandgap Engineering of β-(Al, Ga)2O3 Mixed Crystals

doi:10.15541/jim20160135

Abstract

Abstract:

Bandgap tunable β-(Al, Ga)₂O₃ mixed crystals with different Al³⁺concentration were grown by the optical floating zone (OFZ) method. When the nominal Al³⁺ doping concentration was close to 0.26, cracking appeared. The powder X-ray diffraction (XRD) revealed that β-(Al, Ga)₂O₃ mixed crystals kept the crystal structure of β-Ga₂O₃ without foreign phases and the lattice parameters decreased with the increasing Al³⁺ concentration. ²⁷Al magic angle spinning (MAS) nuclear magnetic resonance (NMR) spectroscopy showed that Al³⁺ occupied Ga³⁺ positions and the ratio of Al³⁺(IV)/ Al³⁺(VI) was about 1:3.The transmittance spectra were measured to investigate the bandgap of β-(Al, Ga)₂O₃ mixed crystals. Results showed that the bandgap increased continuously with the Al³⁺ concentration increasing from 4.72 eV to 5.32 eV, which may extend the application of β-Ga₂O₃ crystal in optoelectronic devices operating at shorter wavelength.

Key words: β-Ga2O3, Al3+, bandgap, semiconductors

CLC Number:

TN304

XIAO Hai-Lin, SHAO Gang-Qin, SAI Qing-Lin, XIA Chang-Tai, ZHOU Sheng-Ming, YI Xue-Zhuan. Wide Bandgap Engineering of β-(Al, Ga)₂O₃ Mixed Crystals[J]. Journal of Inorganic Materials, 2016, 31(11): 1258-1262.

Figures/Tables 7

Fig. 1 Pictures of β-(Al, Ga)2O3 mixed crystal ingots doped with different Pictures of Al3+ concentrations(a) 0.09; (b) 0.17; (c) 0.23

Fig. 2 Al3+ concentration in mixed crystal x vs Al3+ concentration in mixed powder xp

Fig. 3 (a) Powder XRD patterns of β-(AlxGa1-x)2O3 (x = 0, 0.12, 0.31) mixed crystals and (b) The final observed, calculated and difference profiles for Rietveld refinement of the β-(Al0.12Ga0.88)2O3 structure

Table 1 Refined lattice parameters for β-(AlxGa1-x)2O3 (x = 0, 0.12, 0.31)

	a/nm	b/nm	c/nm	β /(˚)	V/nm³
β-Ga₂O₃	1.22289(3)	0.303736(16)	0.580719(19)	103.842(3)	0.209436(11)
β-(Al_0.12Ga_0.88)₂O₃	1.21859(2)	0.302667(18)	0.579099(18)	103.917(3)	0.207316(13)
β-(Al_0.31Ga_0.69)₂O₃	1.21173(4)	0.30040(3)	0.57660(3)	104.003(4)	0.203646(18)

Fig. 4 27Al MAS NMR spectra of series β-(AlxGa1-x)2O3 (x= 0.12, 0.22, 0.31) samples

Fig. 5 Transmittance of β-(Al, Ga)2O3 mixed crystals with different Al3+concentration in mixed crystals x. The insert is (αhυ)2 vs hυ plot of β-(Al, Ga)2O3 mixed crystals with different Al3+ concentration in mixed crystals x

Fig. 6 Bandgap of β-(Al, Ga)2O3 mixed crystal vs Al3+ concentration in mixed crystals x

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Wide Bandgap Engineering of β-(Al, Ga)₂O₃ Mixed Crystals

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