Thermal Modulation Behavior inside the Hysteresis Loop of W-Mo Co-doping Vanadium Dioxide Film

doi:10.3724/SP.J.1077.2013.12358

Abstract

Abstract:

V_1-_x_-_yMo_xW_yO₂ polycrystalline films were deposited on Si (100) substrate by an aqueous Sol-Gel method. XRD, SEM were used to detect the morphology and crystal structure of the films. In situ FTIR was carried out to analyze phase transition properties of the V_1-_x_-_yMo_xW_yO₂ films. The results show that the prepared films are (011) oriented on Si substrate at room temperature, W⁶⁺ and Mo⁶⁺ substitute the position of V⁴⁺in the sublattice. The infrared transmittance hysteresis cycles prove that, with the increasing of the W-Mo co-doping content, the phase transition temperature becomes low, while the temperature width of the hysteresis and the sharpness of the phase transition decrease, but the temperature width of the phase transition duration becomes wide. In the temperature range of the phase transition duration the infrared transmittance is modulated by the temperature path, and the infrared transmittance cycles are confined to the boundary of the infrared transmittance hysteresis cycles.

Key words: vanadium dioxide film, infrared optical properties, W-Mo doping, thermal modulation

CLC Number:

TG135

ZHANG Yang, HUANG Wan-Xia, SHI Qi-Wu, SONG Lin-Wei, XU Yuan-Jie. Thermal Modulation Behavior inside the Hysteresis Loop of W-Mo Co-doping Vanadium Dioxide Film[J]. Journal of Inorganic Materials, 2013, 28(5): 497-501.

Figures/Tables 4

Fig. 1 (a) XRD patterns of V1-x-yMoxWyO2 films on Si substrates and (b) dependence of d(011) on impurity content

Fig. 2 SEM images of V1-x-yMoxWyO2 films

Fig. 3 Infrared transmittance of V1-x-yMoxWyO2 films vs temperature. The wavenumber is 401 cm-1. The lines 1, 2, 3 or 4 show reversal curves for different Tr. The insets show the first order derivative of minus transmittance vs temperature

Fig. 4 Infrared transmittance of V1-x-yMoxWyO2 films in the range of the temperature (a) x=y=0 from T1 to T9 and (b) x=y= 1.444at% from T1 to T6

References 22

[1]	Morin F J. Oxides which show a metal-to insulator transition at the neel temperature. Phys. Rev. Lett., 1959, 3(1): 34-36.
[2]	Cavalleri A, Tóth C, Siders C W, et al. Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition. Phys. Rev. Lett. , 2001, 87(23): 207401-1-4.
[3]	Lysenko S, Vikhnin V, Fernandez F, et al. Photoinduced insulator- to-metal transition in VO2 crystalline films and model of dielectric susceptibility. Phys. Rev. B, 2007, 75(7): 075109-1-13.
[4]	Chen Sihai, Ma Hong, Dai Jun, et al. Nanostructured vanadium dioxide thin ﬁlms with low phase transition temperature. Appl. Phys. Lett. , 2007, 90(10): 101117-1-3.
[5]	Manning T D, Parkin I P, Pemble M E, et al. Intelligent window coatings: atmospheric pressure chemical vapor deposition of tungsten- doped vanadium dioxide. Chem. Mater., 2004, 16(4): 744-749.
[6]	Lysenko S, Rua A J, Vikhnin V, et al. Light-induced ultrafast phase transitions in VO2 thin film. Appl. Surf. Sci., 2006, 252(15): 5512-5515.
[7]	Roach W R. Holographic Storage in VO2. Appl. Phys. Lett., 1971, 19(11): 453-455.
[8]	WEI Xiong-Bang,WU Zhi-Ming,WANG Tao, et al. Growth of vanadium oxide thin films on glass substrate. Journal of Inorganic Materials, 2008, 23(2): 364-368.
[9]	Nishikawa Masami, Nakajima Tomohiko, Kumagai Toshiya, et al. Adjustment of thermal hysteresis in epitaxial VO2 films by doping metal ions. J. Ceram. Soc. Jpn, 2011, 119(7): 577-580.
[10]	Ramírez J G, Sharoni A, Dubi Y, et al. First-order reversal curve measurements of the metal-insulator transition in VO2: signatures of persistent metallic domains. Phys. Rev. B, 2009, 79(23): 235110-1-7.
[11]	Lopez R, Boatner L A, Haynes T E, et al. Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation. Appl. Phys. Lett., 2001, 79(19): 3161-3163.
[12]	Shi Jianqiu, Zhou Shuxue, You Bo, et al. Preparation and thermochromic property of tungsten-doped vanadium dioxide particles. Solar Energy Materials & Solar Cells, 2007, 91(19): 1856-1862.
[13]	Du Jing, Gao Yanfeng, Luo Hongjie, et al. Signiﬁcant changes in phase-transition hysteresis for Ti-doped VO2 ﬁlms prepared by polymer-assisted deposition. Solar Energy Materials & Solar Cells, 2011, 95(2): 469-475.
[14]	Burkhardt W, Christmann T, Franke S, et al. Tungsten and fluorine co-doping of VO2 films. Thin Solid Films, 2002, 402(1/2): 226-231.
[15]	Soltani M, Chaker M, Haddad E, et al. Effects of Ti-W codoping on the optical and electrical switching of vanadium dioxide thin ﬁlms grown by a reactive pulsed laser deposition. Appl. Phys. Lett., 2004, 85(11): 1958-1960.
[16]	Yan Jiazhen, Zhang Yue, Huang Wanxia, et al. Effect of Mo-W Co-doping on semiconductor-metal phase transition temperature of vanadium dioxide film. Thin Solid Films, 2008, 516(23): 8554-8558.
[17]	Viswanath B, Ko C, Ramanathan S. Thermoelastic switching with controlled actuation in VO2 thin ﬁlms. Scripta Mater., 2011. 64(6): 490-493.
[18]	Gurvitch M, Luryi S, Polyakov A, et al. Nonhysteretic behavior inside the hysteresis loop of VO2 and its possible application in infrared imaging. J. Appl. Phys. , 2009, 106(10): 1-1-15.
[19]	Brassard D, Fourmaux S, Jean-Jacques M, et al. Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films. Appl. Phys. Lett. , 2005, 87(5): 051910-1-3.
[20]	Piccirillo C, Binions R, Parkin I P. Synthesis and characterisation of W-doped VO2 by aerosol assisted chemical vapour deposition. Thin Solid Films, 2008, 516(8): 1992-1997.
[21]	Xu Shiqing, Ma Hongping, Dai Shixun, et a1. Study on optical and electrical switching properties and phase transition mechanism of Mo6+ doped vanadium dioxide thin films. Journal of MateriaIs Science, 2004, 39(2): 489-493.
[22]	Lopez R, Haynes T E, Boatner L A, et al. Size effects in the structural phase transition of VO2 nanoparticles. Phys. Rev. B, 65(22): 224113-1-5.