Progress in Nanoscale Piezoresponse Force Microscopy on Ferroelectrics

Abstract

Abstract: Piezoresponse force microscopy, developed on the base of atomic force microscopy, is a technology of detecting the deflection of the sample surface under alternating electric field according to the converse piezoelectric effect. It has been used to research on nanoscale three-dimensional image of ferroelectric domains, dynamical behavior of domains, control of domain and characterization of local physical properties. This review is involved with the latest progress in piezoresponse force microscopy on ferroelectric materials.

Key words: piezoresponse force microscopy, nanoscale, ferroelectric domain, local property

CLC Number:

TB34

YU Han-Feng,ZENG Hua-Rong,CHU Rui-Qing,LI Guo-Rong,YIN Qing-Rui. Progress in Nanoscale Piezoresponse Force Microscopy on Ferroelectrics[J]. Journal of Inorganic Materials.

References

[1] Araujo C A, Cuchiaro J D, McMillan L D, et al. Nature (London), 1995, 374: 627--629.
[2] Lee J J, Thio C L, Desu S B. Phys. Status Solidi, 1995, A151: 171--182.
[3] Scott J F, Araujo C A. Science, 1989, 246: 1400--1405.
[4] Merz W J. Phys. Rev., 1954, 95: 690--698.
[5] Hooton J A, Merz W J. Phys. Rev., 1955, 98: 409--413.
[6] Park B M, Chung S J, Kim H S, et al. Philosophical Magzine, 1997, A75: 611--620.
[7] Robinson G Y, White R M. Appl. Phys. Lett., 1967, 10: 320--323.
[8] Miao S, Zhu J, Zhang X W. Phys. Rev., 2002, B65: 052101/1--052101/4.
[9] Zhang B Y, Jiang F M, Yang Y, et al. J. Appl. Phys., 1996, 80: 1916--1918.
[10] Yin Q R, Yang Y, Zhang B Y, et al. Journal of the Korean Physical Society, 1998, 32: 719--723.
[11] Tirhomirova N A, Pikin S A, Shuvalov L A, et al. Ferroelectrics, 1980, 29: 145--156.
[12] Fl?rsheimer M, Paschotta Q, Kubitscheck U, et al. Appl. Phys., 1998, B67: 593--599.
[13] Franke K, Besold J, Haessler W, et al. Surf. Sci. Lett., 1994, 302: L283--L288.
[14] Takata K, Kushida K, Torii K, et al. Jpn. J. Appl. Phys., 1994, 33: 3193--3196.
[15] Luthi R, Haefke H, Meyer K P, et al. J. Appl. Phys., 1993, 74 (12): 7461--7471.
[16] Okino H, Ida T, Ebihara H, et al. Jpn. J. Appl. Phys., 2001, 40: 5828--5832.
[17] Loppacher Ch, Schlaphof F, Schneider S, et al. Surface Science, 2003, 532-535: 483--487
[18] Abplanalp M, Eng L M, Günter P. Appl. Phys., 1998, A66: S231--S234.
[19] Ganpule C S, Nagarajan V, Hill B K, et al. J. Appl. Phys., 2002, 91 (3): 1477--1481.
[20] Roelofs A, Bottger U, Waser R, et al. Appl. Phys. Lett., 2000, 77 (21): 3444--3447.
[21] Eng L M, Güntherodt H J, Schneider G A, et al. Appl. Phys. Lett., 1999, 74 (2): 233--235.
[22] Eng L M. Nanotechnology, 1999, 10: 405--411.
[23] Liu T, Lynch C S. Acta Materials, 2003, 51: 407--416.
[24] Ganpule,C S, Nagaraian V, Ogale S B, et al. Appl. Phys. Lett,. 2000, 77 (20): 3275--3277.
[25] Orlik X K , Likodimos V, Pardi L. Appl. Phys. Lett., 2000, 76 (10): 1321--1323.
[26] Kalinin S V, Bonnell D A. Appl. Phys. Lett., 2001, 78 (8): 1116--1118.
[27] Munoz-Saldana J, Schneider G A, Eng L M. Surface Science, 2001, 480: L402--410.
[28] Zavala G, Fendler J H, McKinstry S T. J. Appl. Phys., 1997, 81 (11): 7480--7491.
[29] Durkan C, Welland M E. Ultramicroscopy, 2000, 80: 141--148.
[30] Lin H N, Chen S H, Ho S T, et al. J. Vac. Sic. Technol., 2003, 21 (2): 916--918.
[31] Gruverman A, Kholkin A, Kingon A, et al. Appl. Phys. Lett., 2001, 78 (18): 2751--2753.
[32] Abplanalp M, Fousek J, Gunter P. Phys. Rev. Lett., 2001, 86: 5799--5802.
[33] Zavala G, Fendler J H, Mckinstry S T. J. Korean Phys. Soc., 1998, 32: 1464--1467.
[34] Labardi M, Polop C, Likodimos V, et al. Appl. Phys. Lett., 2003, 83 (10): 2028--2030.
[35] Harnagea C, Alexe M, Hesse D, et al. Appl. Phys. Lett., 2003, 83 (2): 338--340.
[36] Kalinin S V, Bonnell D A. J. Mater. Res., 2002, 17 (5): 936--939.
[37] Abplanalp M, Gunter P. Proceedings of the Eleventh IEEE International Symposium on Applications of Ferroelectrics, 1998. 423--426.
[38] Abplanalp M, Barosová D, Bridenbaugh P, et al. Solid State Communications, 2001, 119: 7--12.
[39] Eng L M, Güntherodt H J, Roseman G, et al. J. Appl. Phys., 1998, 83 (11): 5973--5977.
[40] Roelofs A, Pertsev N A, Waser R, et al. Appl. Phys. Lett., 2002, 80 (8): 1424--1426.
[41] Zybill C E, Boubekeur H, Radojkovic P, et al. Surf. Sci., 1999, 440: 221--230.
[42] Roelofs A, Schneller T, Szot K, et a.l Appl. Phys. Lett., 2002, 81: 5231--5233.
[43] Kalinin S V, Bonnell D A. Appl. Phys. Lett., 2001, 78 (8): 1116--1118.
[44] Likodimos V, Orlik X K, Pardi L, et al. J. Appl. Phys., 2000, 87 (1): 443--451.
[45] Likodimos V, Labardi M, Allegrini M, et al. Surface Science, 2001, 490: 76--84.
[46] Gruverman A, Auciello O, Tokumoto H. Annu. Rev. Mater. Sci., 1998, 28: 101--123.
[47] Saya Y, Watanabe S, Kawai M, et al. Jpn. J. Phys., 2000, 39: 3799--3803.
[48] Kelmana M B, McIntyreb P C, Hendrix B C, et al. J. Appl. Phys., 2003, 93 (11): 9231--9236.
[49] Kholkin A L, Shvartsman V V, Emelyanov A Y, et al. Appl. Phys. Lett., 2003, 82 (13): 2127--2129.
[50] Fu D, Suzuki K, Kato K, et al. Appl. Phys. Lett., 2003, 82 (13): 2130--2132.
[51] Fu D, Suzuki K, Kato K, et al. Jpn. J. Appl. Phys., 2002, 42: 6724--6729.
[52] Li Y L, Hu S Y, Liu Z K, et al. Acta Materialia, 2002, 50: 395--411.
[53] Auciello O, Gruverman A, Tokumoto H, et al. MRS Bulletin, 1998, 1: 33--41.
[54] Ganpule C S, Nagarajan V, Li H, et al. Appl. Phys. Lett., 2000, 77 (2): 292--294.
[55] Yan F, Bao P, Chan H L, et al. Thin Solid Films, 2002, 406: 282--285.
[56] Guo H Y, Xu J B, Wilson I H, et al. Appl. Phys. Lett., 2002, 81 (4): 715--717.
[57] Nagarajan V, Roytburd A, Stanishevisky A, et al. Nature Materials, 2003, 2: 43--47.
[58] Harnagea Catalin. Ph. D. thesis, Martin Luther University, Germany, 2001.
[59] Haranagea C, Pignolet A, Alexe M, et al. Integrated Ferroelectrics, 2001, 44: 113--124.
[60] Eng L M, Friedrich M, Fousek J, et al. Ferroelectrics, 1996, 186: 49--52.
[61] Xie Z, Luo E Z, Xu J B. Appl. Phys. Lett., 2000, 76 (14): 1923--1925.
[62] Xie Z, Luo E Z, Peng H B, et al. Journal of Non-crystalline Solids, 1999, 254: 112--117.